过渡金属掺杂的扶手椅型氮化硼纳米带的磁电子学特性及力-磁耦合效应

基于密度泛函理论的第一性原理计算方法,研究了多种过渡金属(TM)掺杂扶手椅型氮化硼纳米带(ABNNR-TM)的结构特点、磁电子特性及力-磁耦合效应.计算的结合能及分子动力学模拟表明ABNNRTM的几何结构是较稳定的,同时发现对于不同的TM掺杂,ABNNRs能表现出丰富的磁电子学特性,可以是双极化磁性半导体、一般磁性半导体、无磁半导体或无磁金属.双极化磁性半导体是一种重要的稀磁半导体材料,它在巨磁阻器件和自旋整流器件上有重要的应用.此外,力-磁偶合效应研究表明:ABNNR-TM的磁电子学特性对应力作用十分敏感,能实现无磁金属、无磁半导体、磁金属、磁半导体、双极化磁性半导体、半金属等之间的相变.特别是呈现的宽带隙半金属对于发展自旋电子器件有重要意义.这些结果表明:可以通过力学方法来调控ABNNR-TM的磁电子学特性.     

理论研究Stone-Wales缺陷和C掺杂对手性BN纳米带的带隙调控

通过第一性原理密度泛函理论的方法,研究了Stone-Wales 缺陷和C掺杂对手性BN纳米带的带隙调控.结果表明,Stone-Wales 缺陷使得BN纳米带的价带顶(VBM)和导带底(CBM)的占据态发生变化,从而引入了缺陷能级降低了带隙,但Stone-Wales 缺陷的个数对带隙的大小影响不明显.电子结构计算表明,带Stone-Wales 缺陷的BN纳米带的缺陷能级主要是由VBM附近形成N-N原子的类π键轨道和CBM附近形成B-B原子的类σ键分布决定.通过在带Stone-Wales 缺陷的BN纳米带中引入C掺杂改变杂质能级的分布,在VBM附近形成了C-C原子的类σ键轨道和CBM附近形成了C-B原子的类σ键,这样可以进一步降低BN纳米带的带隙,拓展了BN纳米带的应用.     

Molecular logic gates based on spin caloritronic transport properties of Mn phthalocyanine nanoribbon

Based on the density functional theory along with nonequilibrium Green's function technique, we investigate the spin caloritronic transport properties of ferromagnetic one-dimensional Mn phthalocyanine nanoribbon under different magnetic configurations. The results demonstrate the thermally-driven spin-dependent currents depend strongly on the choice of magnetic configuration. The underlying mechanism is analyzed by the Fermi-Dirac distribution function, spin-resolved transmission spectra, band structures and current spectra. And based on those intriguing spin caloritronic transport properties, we design thermal spin AND, OR and NOT molecular logic gates.     

Overlaps of deformed and non-deformed harmonic oscillator basis states

A systematic approach for expanding non-deformed harmonic oscillator basis states in terms of deformed ones, and vice versa, is presented. The objective is to provide analytical results for calculating these overlaps (transformation brackets) between deformed and non-deformed basis states in spherical, cylindrical, and Cartesian coordinates. These overlaps can be used for reducing the complexity of different research problems that employ three-dimensional harmonic oscillator basis states, for example as used in coherent state theory and the nuclear shell-model, especially within the context of ab initio symmetry-adapted no-core shell model.     

Spin-dependent transport induced by magnetization in zigzag graphene nanoribbons coupled to one-dimensional leads

We study spin transport in a zigzag graphene nanoribbon sample with two ferromagnetic strips deposited on the two sides of the ribbon. A tight-binding Hamiltonian was adopted to describe the sample connected to two one-dimensional leads. Our theoretical study shows that the resonance peaks of conductance for the spin-up and spin-down electrons are separated for the parallel configuration of the ferromagnetic strips, while they are not separated for the case of antiparallel configuration. This means that giant magnetoresistance can be produced at particular energies by altering the configurations of the ferromagnetic strips, and the device can be designed as a spin filter.     

Properties of Zr hypernuclei in deformed Skyrme Hartree-Fock approach

Properties of the even-N Zr isotopes and their corresponding single-Λ and double-Λ hypernuclei are studied in the deformed Skyrme-Hartree-Fock approach. Binding energy, the two-neutron separation energies, radii are studied from beta-stable zone to the neutron drip line in this paper. The neutron drip line nuclei predicted with SLy4 and SkI4 interactions are 122Zr and 138Zr, respectively. The neutron drip line of single-Λ and double-Λ hypernuclei are Λ139Zr and 2Λ142 Zr with SkI4 interaction, respectively. The predicted hyperon drip line hypernuclei with 80Zr and 138Zr cores are 20Λ100Zr and 50Λ188Zr, respectively.     

用耗散粒子动力学方法研究高分子链取向对形变液滴回缩法测定界面张力值的影响

在利用形变液滴回缩法(DDRM)测量了分子共混体系界面张力的过程中, 要求椭球液滴内高分子链应力松弛速度远快于椭球的回缩速度. 我们建立高分子链取向模型, 用耗散粒子动力学研究高分子链的取向及应力松弛对界面张力测量值的影响. 结果表明, 当高分子链沿着流场方向取向时, 应力是否完全松弛对界面张力测量值的影响较大, 当高分子链取向方向垂直于流场方向时, 应力是否松弛对测量值影响较小.     

直接甲醇燃料电池电催化剂载体碳纳米带的合成与表征

 以间苯二酚和甲醛为碳前体,合成了一种新型碳纳米材料碳纳米带(CNRs), 并采用透射电镜(TEM)、 X射线衍射(XRD)及氮气吸附/脱附测试对CNRs进行了结构表征. 结果表明,所合成的CNRs具有很高的石墨化程度及较规则的带状结构,带宽约为8～20 nm, BET比表面积为283 m2/g, 氮气等温线为type-Ⅳ型,表明CNRs为中孔结构,平均孔径约为8.2 nm. 以CNRs为载体通过多元醇法制备了45%PtRu/CNRs电催化剂,该催化剂与以Vulcan XC-72R为载体的PtRu电催化剂相比,直接甲醇燃料电池单池性能得到明显提高.     

含单排线缺陷锯齿型石墨烯纳米带的电磁性质

基于密度泛函理论的第一性原理方法,研究了含单排线缺陷锯齿型石墨烯纳米带(ZGNR)的电磁性质,主要计算了该缺陷处于不同位置时的能带结构、透射谱、自旋极化电荷密度、总能以及布洛赫态.研究表明,含单排线缺陷的ZGNR和无缺陷的ZGNR在非磁性态和铁磁态下都为金属.虽然都为金属,但其呈金属性的成因有差异.在反铁磁态下,单排线缺陷越靠近ZGNR的边缘,对ZGNR电磁性质的影响越明显,缺陷由ZGNR对称轴线向边缘移动过程中,含单排线缺陷的ZGNR有一个半导体-半金属-金属的相变过程.虽然线缺陷靠近中线的ZGNR为半导体,但由于缺陷引入新的能带,导致含单排线缺陷的ZGNR的带隙小于无缺陷ZGNR的带隙.单排线缺陷紧邻边界时,含缺陷ZGNR最稳定;单排线缺陷位于次近邻边界位置时,含缺陷ZGNR最不稳定.在反铁磁态下,对单排线缺陷位于对称轴线的ZGNR施加适当的横向电场,可以实现半导体到半金属的转变.这些研究结果对于发展基于石墨烯的纳米电子器件有重要的意义.     

Preparation and characterization of semiconductor GNR-CNT nanocomposite and its application in FET

So far, little is known about the experimental potential of graphene nanoribbon-carbon nanotube (GNR-CNT) heterostructure as a semiconductor nanocomposite. The present work examined the structural features, topography and electronic properties of GNR-CNT nanocomposite by using Raman spectroscopy, transmission electron microscopy, scanning tunneling microscopy and spectroscopy (STS). The homogenous semiconductor GNR-CNT nanocomposites were produced under optimized synthesis conditions. The narrow band gap was exhibited by optimization of the reduction step. The STS of the micro-scale surface of the nanocomposite shows local density of state in selected areas that represent the 0.08 eV band gap of a homogenous nanocomposite. The potential of the semiconductor nanocomposite was considered for application in stacked graphene nanoribbon-field effect transistors (SGNR-FETs). A simple method of device fabrication is proposed based on a semiconductor stacked GNR nanocomposite. The high hole mobility and rectifying effect of the p–n junction of the SGNR nanocomposite on TiO₂ are demonstrated. The optimal thickness for the back gate TiO₂ dielectric for the tested devices was 40 nm. This thickness decreased leakage current at the p–n junction of the SGNR/TiO₂ interface, which is promising heterojunction for optoelectronics. The thickness of gate dielectric and quantum capacitance of the gate was investigated at the low 40 nm thickness by calculating the mobility. In the proposed SGNR-FET, holes dominate electrical transport with a high mobility of about 1030 cm²/V s.