BN链掺杂的石墨烯纳米带的电学及磁学特性

基于密度泛函理论第一性原理系统研究了BN链掺杂石墨烯纳米带(GNRs)的电学及磁学特性, 对锯齿型石墨烯纳米带(ZGNRs)分非磁态(NM)、反铁磁态(AFM)及铁磁性(FM)三种情况分别进行考虑. 重点研究了单个BN链掺杂的位置效应. 计算发现: BN链掺杂扶手椅型石墨烯纳米带(AGNRs) 能使带隙增加, 不同位置的掺杂, 能使其成为带隙丰富的半导体. BN链掺杂非磁态ZGNR的不同位置, 其金属性均降低, 并能出现准金属的情况; BN链掺杂反铁磁态ZGNR, 能使其从半导体变为金属或半金属(half-metal), 这取决于掺杂的位置; BN链掺杂铁磁态ZGNR, 其金属性保持不变, 与掺杂位置无关. 这些结果表明: BN链掺杂能有效调控石墨烯纳米带的电子结构, 并形成丰富的电学及磁学特性, 这对于发展各种类型的石墨烯基纳米电子器件有重要意义. 关键词： 石墨烯纳米带 BN链掺杂 输运性质 自旋极化     

Andreev reflection in a patterned graphene nanoribbon superconducting heterojunction

In the study, an improved superconducting heterojunction is made up of a zigzag graphene nanoribbon, which is patterned by a triangle and supports localized edge mode. Since all the localized edge modes stem from a pattern operation, the structure features of the pattern exert an enormous function on the coherent quantum transport. Especially, the patterned modes can enhance the Andreev reflection largely both in the ferromagnetic nanoribbon edge and the antiferromagnetic nanoribbon edge. The spin resolved zero bias conductances, in sharp contrast to its counterpart in the infinite width superconducting heterojunction, exhibit the different dependence on the patterned ferromagnetic interaction.     

三维氮掺杂碳纳米带的制备及其在锂硫电池中的应用

锂硫电池凭借其高的理论能量密度（2600 W·h·kg^-1）、丰富廉价的材料来源、且对环境友好等优势,而引起了人们的广泛关注.然而,锂硫电池活性物质导电性差、多硫化物易溶于有机电解液等问题所导致的硫正极倍率性能和循环稳定性差,仍然是困扰锂硫电池发展的挑战性难题.我们设计并以廉价易得的小分子化合物对苯二酚和甲醛为原料,通过缩聚反应、与氧化石墨烯原位复合、高温氮化制备了一类新型氮掺杂的碳纳米带固硫载体材料（NCNB-NG）.通过NCNB-NG复合纳米硫进一步得到的碳-硫复合正极材料（S@NCNB-NG）表现出更优异的倍率性能和循环稳定性,这主要得益于该碳质载体独特的微结构以及改善的导电性.     

Deformed “commutative” Chern–Simons’ system

Noncommutative Chern–Simons’ system is non-perturbatively investigated at a full deformed level. A deformed “commutative” phase space is found by a non-canonical change between two sets of deformed variables of noncommutative space. It is explored that in the “commutative” phase space all calculations are similar to the case in commutative space. Spectra of its energy and angular momentum of the Chern–Simons’ system are obtained at the full deformed level. The noncommutative–commutative correspondence is clearly showed. Formalism for the general dynamical system is briefly presented. Some subtle points are clarified.     

A biosensor based on graphene nanoribbon with nanopores: a first-principles devices-design

A biosensor device,built from graphene nanoribbons(GNRs) with nanopores,was designed and studied by firstprinciples quantum transport simulation.We have demonstrated the intrinsic transport properties of the device and the effect of different nucleobases on device properties when they are located in the nanopores of GNRs.It was found that the device’s current changes remarkably with the species of nucleobases,which originates from their different chemical compositions and coupling strengths with GNRs.In addition,our first-principles results clearly reveal that the distinguished ability of a device’s current depends on the position of the pore to some extent.These results may present a new way to read off the nucleobases sequence of a single-stranded DNA(ssDNA) molecule by such GNRs-based device with designed nanopores     

Tuning spin-filtering,rectifying, and negative differential resistance by hydrogenation on topological edge defects of zigzag silicene nanoribbons

By first-principles calculations, we propose three heterojunction nanodevices based on zigzag silicene nanoribbons with different edge-hydrogenated topological line defects. The devices all present excellent spin-filtering properties with 100% spin polarization as well as remarkable rectifying effect (with rectification ratio around 10²) and negative differential resistance behaviors. Our findings shed new light on the design of silicon-based nanodevices with intriguing spintronic applications.     

Quantum transport through a Z-shaped silicene nanoribbon

In this work,the electronic transport properties of Z-shaped silicene nanoribbon(ZsSiNR) structure are investigated.The calculations are based on the tight-binding model and Green's function method in Landauer-Biittiker formalism,in which the electronic density of states(DOS),transmission probability,and current-voltage characteristics of the system are calculated,numerically.It is shown that the geometry of the ZsSiNR structure can play an important role to control the electron transport through the system.It is observed that the intensity of electron localization at the edges of the ZsSiNR decreases with the increase of the spin-orbit interaction(SOI) strength.Also,the semiconductor to metallic transition occurs by increasing the SOI strength.The present theoretical results may be useful to design silicene-based devices in nanoelectronics.     

Contact position and width effect of graphene electrode on the electronic transport properties of dehydrobenzoannulenne molecule under bias

By applying nonequilibrium Green?s function formalism in combination with density functional theory, we have investigated the electronic transport properties of dehydrobenzoannulenne molecule attached to different positions of the zigzag graphene nanoribbons (ZGNRs) electrode. The different contact positions are found to drastically turn the transport properties of these systems. The negative differential resistance (NDR) effect can be found when the ZGNRs electrodes are mirror symmetry under the xz midplane, and the mechanism of NDR has been explained. Moreover, parity limitation tunneling effect can be found in a certain symmetry two-probe system and it can completely destroy electron tunneling process. The present findings might be useful for the application of ZGNRs-based molecular devices.     

Carbon doping induced giant low bias negative differential resistance in boron nitride nanoribbon

By applying nonequilibrium Green's function combined with density functional theory, we investigated the electronic transport properties of carbon-doped armchair boron nitride nanoribbons. Obvious negative differential resistance (NDR) behavior with giant peak-to-valley ratio up to the order of ${10}^4\text{–}{10}^6$ is found by tuning the doping position and concentration. Especially, with the reduction of doping concentration, NDR peak position can enter into mV bias range and even can be expected lower than mV bias. The negative differential resistance behavior is explained by the evolution of the transmission spectra and band structures with applied bias.