Joint Destruction of Cadmium and Copper at Alternating Current Electrolysis in Sodium Hydroxide Solution

The dependence of the metal oxidation rate on the current density and temperature of joint destruction in sodium chloride was studied. It is established that the dependence of the oxidation rate of copper is linear and generally do not differ from the dependencies established at individual oxidation of copper in the solution of sodium chloride with concentration 46.5% wt. In contrast to the oxidation rate of copper, the oxidation rate dependence of cadmium has extreme character and the oxidation rate of cadmium at its joint oxidation of copper increased in 2-3 times indicating that the mutual influence of electrodes at the electrochemical process with alternating current. Thus, the obtained dependences can predict operating electrolysis parameters a obtain copper-cadmium oxide system of the given composition.     

Interplay of Hückel and Möbius Aromaticity in Metal-Metal Quintuple Bonded Complexes of Cr,Mo, and W with Amidinate Ligand: Ab initio DFT and Multireference Analysis**

The aromaticity of metal-metal quintuple bonded complexes of the type M₂L₂ (M=Cr, Mo, and W; L=amidinate) are studied employing gauge including magnetically induced ring current (GIMIC) analysis and electron density of delocalized bonds (EDDB). It is found that the complexes possess two types of aromaticity: i) Hückel aromaticity through delocalization of ligand π electrons with metal-metal δ-bond-forming 6 conjugated electrons (4π and 2δ) ring; ii) Craig-Möbius aromaticity through delocalization of π electrons of both the ligands with metal d-orbitals in Craig type orientation forming 10π electrons ring with a double twist. Extended transition state natural orbital chemical valence (ETS-NOCV) and canonical molecular orbital natural chemical shielding (CMO-NCS) analysis confirm the Craig-Möbius type arrangement of the orbitals. Furthermore, the unprecedented Hückel and Möbius type aromaticity is confirmed from the plot of the current pathways using 3D line integral convolution (3D-LIC) plots. The metal-metal bond order also increases down the group as justified from the complete active space self-consistent field (CASSCF) analysis. Due to an increase in the π and δ electron conjugation, both the Hückel and Möbius aromaticity increase down the group.     

Recent progress in separation prediction of counter‐current chromatography

As a liquid‐liquid partition chromatography, counter‐current chromatography has advantages in large sample loading capacity without irreversible adsorption, which has been widely applied in separation and purification fields. The main factors, including partition coefficient, two‐phase solvent systems, apparatus, and operating parameters greatly affect the separation process of counter‐current chromatography. To promote the applications of counter‐current chromatography, it is essential to develop theoretical research to master the principles of counter‐current chromatographic separations so as to achieve predictions before laborious trials. In this article, recent progress about separation prediction methods are reviewed from a point of the steady and unsteady state of the mass transfer process of counter‐current chromatography and its mass transfer characteristics, and then it is divided into three aspects: prediction of partition coefficient, modeling the thermodynamic process of counter‐current chromatography, and modeling the dynamic process of counter‐current chromatography.     

直流电晕充电下环氧树脂表面电位衰减特性的研究

介质材料表面电荷的积累和衰减行为是制约众多高压直流电力设备研制的关键因素. 薄片状介质试样的表面电荷密度与表面电位近似呈线性关系, 因此常通过表面电位衰减行为研究表面电荷的衰减特性. 基于电晕充电、表面电荷沉积和脱陷、介质体内单极性电荷输运等3个物理过程, 建立表面电位动态响应的物理模型. 通过计算环氧树脂的表面电位衰减行为, 得到栅极电压、相对介电常数和体电导率等对其表面电位衰减特性的影响. 栅极电压越高, 表面电位的衰减速度越快; 环氧树脂材料参数典型值(相对介电常数3.93, 体电导率10^-14 S· m^-1)下, 归一化表面电位的衰减速率随时间变化的曲线可拟合为分段幂函数, 其中, 分段幂函数的特征时间、指数系数与栅极电压分别呈幂函数和线性变化关系. 相对介电常数越大, 表面电位的衰减速度越慢; 环氧树脂相对介电常数典型范围(3–4)内, 表面电位衰减时间常数由1720 s增大到2540 s, 两者呈线性关系. 体电导率越大, 表面电位的衰减速度越快; 环氧树脂体电导率典型范围(10^-15–10^-13 S· m^-1)内, 表面电位衰减时间常数由24760 s 减小到260 s, 两者呈幂函数变化关系.     

太赫兹波段Smith-Purcell辐射的介质加载光栅高频特性

提出了一种用于Smith-Purcell效应器件的介质加载光栅慢波结构,通过研究该结构的注-波互作用过程,推导出带电子注的色散方程,并数值求解出波的线性增长率.利用色散方程,结合电磁场传播的边界条件,推导出Smith-Purcell效应振荡器工作所需的起振电流.详细研究了高频结构长度、电子注主要参数和介质相对介电常数对起振电流的影响,并与普通金属光栅结构进行了比较.结果表明:保持其他参数不变时,高频结构长度越短,起振电流越大;保持高频结构参数不变时,起振电流随电子注厚度和注-栅距离的增大而增大,随电子注电压的增大而减小;与金属光栅相比,介质的引入提高了注-波互作用的增长率,有效减小了振荡器的起振电流.理论计算结果与软件CHIPIC的模拟结果比较符合.     

硅单粒子位移损伤多尺度模拟研究

本文结合分子动力学方法和动力学蒙特卡罗方法, 研究了单个粒子入射硅引起的位移损伤缺陷的产生和演化过程; 基于Shockley-Read-Hall理论计算了单个粒子入射引起的位移损伤缺陷导致的泄漏电流增加及其演化过程, 比较了缺陷退火因子与泄漏电流退火因子之间的差异, 并将计算结果与实验值进行了对比. 结果表明, 计算泄漏电流时, 仅考虑一种缺陷的情况下缺陷退火因子与泄漏电流退火因子相同, 考虑两种缺陷类型情况下二者在数值上有所区别, 但缺陷退火因子仍能在一定程度上反映泄漏电流的退火行为. 分子动力学模拟中采用Stillinger-Weber势函数和Tersoff势函数时缺陷退火因子和泄漏电流退火因子与实验结果一致, 基于Stillinger-Weber势函数的计算结果与实验值更为接近.     

Roles of blocking layer and anode bias in processes of impurity-band transition and transport for GaAs-based blocked-impurity-band detectors

Recently, GaAs-based BIB detector has attracted a lot of attention in the area of THz photovoltaic detection due to potential application values in security check and drug inspection. However, the physical mechanisms involving in carrier transition and transport are still unclear due to the poor material quality and immature processing technique. In this paper, the dark current and THz response characteristics have thus been numerically studied for GaAs-based blocked-impurity-band (BIB) detectors. The key parameters and physical models are constructed by simultaneously considering carrier freeze-out and impurity-band broadening effects. Roles of blocking layer and anode bias in processes of impurity-band transition and transport are intensively investigated, and the results can be well explained by numerical models. It is demonstrated that the effective electric field for the detector is only located in the absorbing layer, and can determine to a large extent the magnitude of the dark current and THz response. While the blocking layer not only can suppress dark current but also can attenuate responsivity due to its electric-field modulation effect.     

Measurability of vacuum fluctuations and dark energy

Vacuum fluctuations of the electromagnetic field induce current fluctuations in resistively shunted Josephson junctions that are measurable in terms of a physically relevant power spectrum. In this paper we investigate under which conditions vacuum fluctuations can be gravitationally active, thus contributing to the dark energy density of the universe. Our central hypothesis is that vacuum fluctuations are gravitationally active if and only if they are measurable   in terms of a physical power spectrum in a suitable macroscopic or mesoscopic detector. This hypothesis is consistent with the observed dark energy density in the universe and offers a resolution of the cosmological constant problem. Using this hypothesis we show that the observable vacuum energy density _ρvac${\rho }_{\mathit{vac}}$ in the universe is related to the largest possible critical temperature _Tc$T_c$ of superconductors through _ρvac=σ·(_kTc)⁴/?³c³${\rho }_{\mathit{vac}}=\sigma ·({\mathit{kT}}_c{)}^4/{?}^3{c}^3$, where σ$\sigma$ is a small constant of the order 10^-3${10}^{-3}$. This relation can be regarded as an analog of the Stefan–Boltzmann law for dark energy. Our hypothesis is testable in Josephson junctions where we predict there should be a cutoff in the measured spectrum at 1.7 THz if the hypothesis is true.     

电子回旋共振离子源等离子体的密度测量

 诊断电子回旋共振离子源等离子体的传统方法是采用传统的单探针无发射时测量伏安曲线,并根据曲线的拐点由理论公式计算出的等离子体密度。本文设计并研制了等离子体密度的测量装置。采用单根朗缪尔探针（该探针可以用来发射电子）测量等离子体的伏安特性。在探针有发射和无发射两种状态下测量得到两条伏安曲线,根据这两条曲线的"分叉点"得到等离子体电位,然后根据该电位直接由计算机计算出电子温度、电子密度。采用该新方法,测量得到的等离子体参量空间电位约为17 V,悬浮电位约为-5 V,电子温度约为4.4 eV,离子密度为1.10×10¹¹cm^-3,与传统方法计算出的等离子体1.12×10¹¹cm^-3相比,两者相差仅1.8％,但新方法效率和精度更高。