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51.
Reduction of dislocation density and improvement of optical quality in ZnO layers by MgO-buffer annealing 总被引:1,自引:0,他引:1
Hiroki Goto Hisao Makino Agus Setiawan Takuma Suzuki Chihiro Harada Tsutomu Minegishi Meoung-Whan Cho Takafumi Yao 《Current Applied Physics》2004,4(6):637-639
Optical properties of ZnO thin films with/without MgO-buffer annealing were investigated by low and room temperature photoluminescence measurements. The ZnO films were grown on c-sapphire substrates by plasma-assisted molecular-beam epitaxy employing a thin MgO-buffer layer. Dislocation density of ZnO layer was reduced from 5.3 × 109 to 1.9 × 109 cm−2 by annealing MgO-buffer prior to the growth of ZnO. The intensity of free exciton emission from the sample with MgO-buffer annealing was almost twice of that from the sample without annealing, while the deep level emission from the sample with MgO-buffer annealing was about 1/3 of that without annealing. The MgO-buffer annealing improves optical quality of overgrown ZnO films. 相似文献
52.
Shigeru Katayama Mika Horiike Kazuyuki Hirao Naoto Tsutsumi 《Journal of Polymer Science.Polymer Physics》2002,40(24):2800-2806
We investigated the structures induced by an irradiation of a near‐infrared (NIR) femtosecond laser pulse in dye‐doped polymeric materials {poly(methyl methacrylate) (PMMA), thermoplastic epoxy resin (Epoxy), and a block copolymer of methyl methacrylate and ethyl acrylate‐butyl acrylate [p(MMA/EA‐BA) block copolymer]}. Dyes used were classified into two types—type 1 with absorption at 400 nm and type 2 with no absorption at 400 nm. The 400‐nm wavelength corresponds to the two‐photon absorption region by the irradiated NIR laser pulse at 800 nm. Type 1 dye‐doped PMMA and p(MMA/EA‐BA) block copolymer showed a peculiar dye additive effect for the structures induced by the line irradiation of a NIR femtosecond laser pulse. On the contrary, dye‐doped Epoxy did not exhibit a dye additive effect. The different results among PMMA, p(MMA/EA‐BA) block copolymer, and Epoxy matrix polymers are supposed to be related to the difference of electron‐acceptor properties. The mechanism of this type 1 dye‐additive‐effect phenomenon for PMMA and p(MMA/EA‐BA) block copolymer is discussed on the basis of two‐photon absorption of type 1 dye at 400 nm by the irradiation of a femtosecond laser pulse with 800 nm wavelength and the dissipation of the absorbed energy to the polymer matrix among various transition processes. Dyes with a low‐fluorescence quantum yield favored the formation of thicker grating structures. © 2002 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 40: 2800–2806, 2002 相似文献
53.
Marek Pękała Jan Mucha Benedicte Vertruyen Rudi Cloots Marcel Ausloos 《Journal of magnetism and magnetic materials》2006
Samples of La0.7Ca0.3Mn1−xGaxO3 with x=0, 0.025, 0.05 and 0.10 were prepared by standard solid-state reaction. They were first characterized chemically, including the microstructure. The magnetic properties and various transport properties, i.e. the electrical resistivity, magnetoresistivity (for a field below 8 T), thermoelectric power and thermal conductivity measured each time on the same sample, are reported. The markedly different behaviour of the x=0.1 sample from those with a smaller Ga content, is discussed. The dilution of the Mn3+/Mn4+ interactions with Ga doping considerably reduces the ferromagnetic double exchange interaction within the manganese lattice leading to a decrease of the Curie temperature. The polaron binding energy varies from 224 to 243 meV with increased Ga doping. 相似文献
54.
55.
A molecular dynamics method has been used to simulate the argon ion-assisted deposition of Cu/Co/Cu multilayers and to explore ion beam assistance strategies that can be used during or after the growth of each layer to control interfacial structures. A low-argon ion energy of 5–10 eV was found to minimize a combination of interfacial roughness and interlayer mixing (alloying) during the ion-assisted deposition of multilayers. However, complete flattening with simultaneous ion assistance could not be achieved without some mixing between the layers when a constant ion energy approach was used. It was found that multilayers with lower interfacial roughness and intermixing could be grown either by modulating the ion energy during the growth of each metal layer or by utilizing ion assistance only after the completion of each layers deposition. In these latter approaches, relatively high-energy ions could be used since the interface is buried and less susceptible to intermixing. The interlayer mixing dependence upon the thickness of the over layer has been determined as a function of ion energy. 相似文献
56.
In this paper we report some of the important results of experimental investigations of the flicker noise near the metal-insulator
(MI) transition in doped silicon single crystals. This is the first comprehensive work to study low-frequency noise in heavily
doped Si over an extensive temperature range (2 K<T<500 K). The measurements of conductance fluctuations (flicker noise) were carried out in the frequency range 10−2<f<4 × 101 Hz in single crystalline Si across the MI transition by doping with phosphorous and boron. The magnitude of noise in heavily
doped Si is much larger than that seen in lightly doped Si over the whole temperature range. The extensive temperature range
covered allowed us to detect two distinct noise mechanisms. At low temperatures (T<100 K) universal conductance fluctuations (UCF) dominate and the spectral dependence of the noise is determined by dephasing
the electron from defects with two-levels (TLS). At higher temperatures (T>200 K) the noise arises from activated defect dynamics. As the MI transition is approached, the 1/f spectral power, typical of the metallic regime, gets modified by the presence of discrete Lorentzians which arise from generation-recombination
process which is the characteristic of a semiconductor. 相似文献
57.
CuO—ZnO/Al2O3—TiO2催化剂中TiO2的结构和电子效应 总被引:6,自引:0,他引:6
采用XPS,XRD,TPR,TPD和指标反应等方法研究了TiO_2在负载型CuO-ZnO/Al_2O_3-TiO_2催化剂中所起的作用.发现TiO_2起双重作用,即结构效应和电子效应,TiO_2的结构效应主要表现为它改善了CuO在载体上的分布.TiO_2的电子效应表现为它对Cu~0具有吸电子的作用,从而削弱了Cu和S之间的吸附力,使S容易脱除.另外,部分还原形成的Ti~(3+)具有促进CuS中的Cu~(2+)还原为Cu~0的能力,TiO_2的上述效应的综合结果使催化剂的抗硫中毒性能大大增强. 相似文献
59.
60.
ZnO对Ag/SiO2催化剂银的分散作用及对吲哚合成稳定性的影响 总被引:2,自引:0,他引:2
将ZnO助剂加到由苯胺和乙二醇一步合成吲哚的Ag/SiO2催化剂中,发现ZnO助剂能大大提高催化剂的稳定性.XRD和TEM表征首次得到:ZnO是结构型助剂,它能使银很好地分散在SiO2表面上,并可有效地抑制反应过程中银粒子的烧结. 相似文献