Electrocatalytic Reduction of Chromium(VI) by Thionin: Electrochemical Properties and Mechanistic Study

The electrochemical properties of aqueous thionin (an electroactive water soluble dye) of pH 1–12 were investigated by cyclic voltammetry at a boron doped diamond(BDD) electrode. A well defined reversible redox couple was observed in acidic, neutral and alkaline solutions. The standard potential and kinetic parameters for thionin were obtained by fitting experimental cyclic voltammograms to those generated by the DigiSim program. The electrogenerated reduced form of thionin has been used as an efficient organic catalyst for the reduction of Cr(VI) at a BDD electrode immersed in aqueous media. The cyclic voltammetry measurements indicate that an electrocatalytic process occurs, where electrochemically generated thionin reduced species (Leucothionin) is oxidized by Cr(VI) back to the parent thionin species via a EC' reaction mechanism. The determination of catalytic rate constant (K_cat) was accomplished again by fitting experimental cyclic voltammograms with simulated ones.     

H2SO4-H2O中硝酸铜对脱硫石膏晶须生长的影响

以处理后的脱硫石膏为原料,在H₂SO₄-H₂O体系中以Cu(NO₃)₂为晶形控制剂采用水热法制备脱硫石膏晶须,探讨了Cu(NO₃)₂对脱硫石膏晶须生长的影响机理。结果表明:Cu(NO₃)₂对脱硫石膏有明显促溶作用,其中Cu²⁺可减小溶液中各离子的活度系数,使溶液中的Ca²⁺浓度增大。NO^-₃通过静电作用在Ca²⁺周围聚集并对SO^2-₄产生屏蔽作用,导致脱硫石膏继续溶解并使Ca²⁺和SO^2-₄的浓度处于相对稳定状态,有利于半水脱硫石膏晶体的形核与生长。此外,Cu²⁺还可在晶须的生长过程中选择性吸附在晶须表面,生成CuSO₄,促进了脱硫石膏的结晶生长,最终在Cu(NO₃)₂用量为2.0%(质量分数)时制备的脱硫石膏晶须长径比约为73。     

导电聚苯胺线膜修饰ZnO纳米棒阵列的可控制备及其紫外探测性能

基于p-n结的光生伏特效应可构筑性能优异的UV探测器,本文采用水热法可控制备竖直排列的氧化锌纳米棒阵列(n型ZnO-NRs),利用原位聚合法在ZnO-NRs表面上修饰p型聚苯胺线膜(PANI-NWs),再组装成ZnO-NRs与ZnO-NRs/PANI-NWs紫外探测器.通过扫描电镜(SEM)、X射线衍射仪(XRD)、紫...     

DMF体系中Cu2O球晶的制备及形貌分析

以N,N-二甲基甲酰胺(DMF)为溶剂,通过改变铜源和表面活性剂,调控反应参数,溶剂热条件下制备了三维十字形、空心及实心的Cu₂O球晶。利用XRD、SEM等表征手段,分析探讨了工艺条件变化对Cu₂O球晶形貌的影响。研究表明,随着DMF浓度的增大,体系的还原能力增强,Cu⁺增多,溶液的过饱和度增大,Cu₂O晶体集合体形态由晶体结构控制的各向异性与对称性的球晶逐渐向各向同性球晶演变。十二烷基硫酸钠(SDS)、十六烷基三甲基溴化铵(CTAB)、聚乙烯吡咯烷酮(PVP)等表面活性剂有助于降低溶液的过饱和度,增加结晶质的表面扩散能力,有利于规则形态Cu₂O晶粒的形成。反应体系中,Cu(Ac)₂·H₂O水解生成的羧基与DMF中的甲酰基在高温下发生脱羧反应产生CO₂气体以及SDS发泡作用产生的气体是形成空心Cu₂O球晶的重要原因。     

Fe掺杂α-Bi2O3光电性质的第一性原理研究

采用第一性原理杂化泛函HSE06方法对Fe掺杂α-Bi2 O3的电子结构和光学性质进行了计算研究.结果表明,Fe掺杂α-Bi2 O3体系有较小的结构变形,本征α-Bi2 O3的禁带宽度为2.69 eV,Fe掺杂使α-Bi2 O3的禁带宽度减小(约为2.34 eV).对其光学性质研究得出Fe掺杂扩展了α-Bi2 O3对可...     

ZnO超细纳米线阵列的制备及其电化学性能

以Zn(NO₃)₂· 6H₂O和C₆H₁₂N₄为原材料,采用二步水热法在碳纤维布上合成了形貌尺寸均匀的ZnO超细纳米线阵列。用 X 射线衍射(XRD)和扫描电镜(SEM)对其晶体结构和形貌进行了表征,利用恒流充放电测试等手段对其进行电化学性能测试。测试结果表明,材料表现出优异的电化学性能。在200 mA/g的电流密度下循环150次后,ZnO超细纳米线阵列仍然约有730 mAh/g的充放电比容量,库伦效率保持在95%以上。在1 200 mA/g的大倍率条件下,材料的充放电比容量依旧可达481 mAh/g左右,表现出十分良好的循环稳定性和可逆性能,是一种较为理想的锂离子电池负极复合材料。     

ZnO纳米棒在Si衬底上外延生长研究

运用热蒸发ZnO粉末法,以金做催化剂,分别在Si(100)和Si(111)两种基片上外延生长了ZnO纳米棒(样品分别标为1#和2#).通过X射线衍射(XRD)和扫描电子显微镜(SEM)分析,结合ZnO与Si的晶格结构特征,从理论上得出了两个样品的晶格匹配关系.1#样品:[0001]ZnO∥[114]Si,[0001]ZnO∥[1-1-4]Si,[0001]ZnO∥[11-4]Si,[0001]ZnO∥[1-14]Si,失配度为1.54;;2#样品:[0001]ZnO∥[111]Si,[21-1-0]ZnO∥[11-0]Si,[1-21-0]ZnO∥[1-01]Si ,[1-1-20]ZnO∥[011-]Si,失配度为18.12;.研究表明Si衬底对ZnO纳米棒生长方向具有调控作用.     

Cu3N薄膜及其研究现状

Cu3N薄膜是近10年来研究的热点材料之一.Cu3N是立方反ReO3结构,理想立方反ReO3结构的一个晶胞中Cu原子占据立方边的中心位置而N原子占据立方晶胞的八个顶点,此结构的体心位置有一较大间隙,Cu原子以及其他原子如Pd、碱金属原子等很有可能进入此位置导致Cu3N的电学性能、光学性能等发生很大的变化,这使得该材料具有很大的潜在应用价值.Cu3N的晶格常数为0.3815nm,密度5.84g/cm3,分子量204.63,颜色呈黑绿色或红褐色,空间点群Pm3m.Cu3N薄膜在室温下相当稳定并且热分解温度较低(300℃左右),热分解前后薄膜的光学反射率有较大差别,这可使Cu3N薄膜用作一次性光记录材料.此外,Cu3N薄膜还可用作在Si片上沉积金属Cu线的缓冲层、低磁阻隧道结的阻挡层、自组装材料的模板等.     

ZnO纳米钉的制备和光学性质研究

通过化学气相沉积(CVD)方法在Si(100)衬底上制备出新型的ZnO纳米钉结构.X射线衍射(XRD)结果表明纳米钉是六角纤锌矿结构.纳米钉顶部对角线在450～750 nm之间,纳米钉长度为几个微米.研究了不同气氛下退火样品的可见发光性质,认为绿光发射来自于导带电子和反位氧中空穴的辐射复合.     

Laser cladding of copper with molybdenum for wear resistance enhancement in electrical contacts

Laser cladding of Mo on Cu has been attempted with the aim of enhancing the wear resistance and hence increasing the service life of electrical contacts made of Cu. In order to overcome the difficulties arising from the large difference in thermal properties and the low mutual solubility between Cu and Mo, Ni was introduced as an intermediate layer between Mo and Cu. The Ni and Mo layers were laser clad one after the other to form a sandwich layer of Mo/Ni/Cu. Excellent bonding between the clad layer and the Cu substrate was ensured by strong metallurgical bonding. The hardness of the surface of the clad layer is seven times higher than that of the Cu substrate. Pin-on-disc wear tests consistently showed that the abrasive wear resistance of the clad layer was also improved by a factor of seven as compared with untreated Cu substrate. The specific electrical contact resistance of the clad surface was about 5.6 × 10⁻⁷ Ω cm².