An optical study of the D-D neutron irradiation-induced defects in Co-and Cu-doped ZnO wafers

Room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped(1×1014,5×1016,and 1×1017cm-2) and Cu-doped(5×1016cm-2) ZnO wafers irradiated by D-D neutrons(fluence of 2.9×1010 cm-2) have been investigated.After irradiation,the Co or Cu metal and oxide clusters in doped ZnO wafers are dissolved,and the wu¨rtzite structure of ZnO substrate for each sample remains unchanged and keeps in high c-axis preferential orientation.The degree of irradiation-induced crystal disorder reflected from the absorption band tail parameter(E0) is far greater for doped ZnO than the undoped one.Under the same doping concentration,the Cu-doped ZnO wafer has much higher irradiation-induced disorder than the Co-doped one.Photoluminescence measurements indicate that the introduction rate of both the zinc vacancy and the zinc interstitial is much higher for the doped ZnO wafer with a high doping level than the undoped one.In addition,both crystal lattice distortion and defect complexes are suggested to be formed in doped ZnO wafers.Consequently,the Co-or Cu-doped ZnO wafer(especially with a high doping level) exhibits very low radiation hardness compared with the undoped one,and the Cu-doped ZnO wafer is much less radiation-hard than the Co-doped one.     

铜原子纳米团簇热力学性质的分子动力学模拟研究

利用分子动力学模拟方法,研究了CuN(N=80,140,216,312,408,500,628和736)纳米团簇在热化和冷凝过程中结构和热力学性质的变化,模型采用的是Johnson的EAM作用势.模拟结果表明:铜团簇的熔点和凝固点随其尺寸线性增加,并逐渐向大块晶体靠拢;所有团簇的凝固点都低于熔点,出现凝固过程中的滞后现象;在熔点和凝固点附近,团簇都具有负热容特性,负热容是由相变前后团簇内部结构突变引起的.     

CuX(X=Al, Ga, In)分子的势能函数与稳定性的密度泛函研究

根据原子分子反应静力学原理导出了CuX(X=Al,Ga,In) 分子基态电子状态及其离解极限,并在B3LYP/LANL2DZ水平上计算了平衡几何、振动频率和解离能.利用Murrell-Sorbie 函数拟合出了解析势能函数,并计算出光谱参数和力常数.计算结果表明该分子体系是稳定存在的,其稳定性排序为 CuAl＞CuGa＞CuIn.     

Interaction of metals with an organic semiconductor: Ag and In on PTCDA

The interaction of Ag and In with a thin film of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) was studied by near-edge X-ray absorption fine structure (NEXAFS). Upon Ag deposition on a PTCDA film of 20 nm thickness the relative intensities and lineshapes, as well as the angular dependence of the spectra remains unchanged, illustrating the formation of a chemically unreactive Ag/PTCDA interface. On the other hand, the adsorption of 0.3 nm In strongly decreases the intensity of the π^* resonances in C and O K-edge NEXAFS spectra. This is attributed to a strong charge transfer between In and PTCDA, leading to a redistribution of the charge in the molecule. However, the absence of a strong shift or new features and negligible dependence of peak intensities corresponding to π^* resonances on the In thickness indicate that the interaction between In and PTCDA is not accompanied by a covalent bond formation.     

原子吸收法直接测定食用L-赖氨酸盐酸盐中的铜和铅

本文报道了用石墨炉-原子吸收分析法，将食用L-赖氨酸盐样品经稀酸溶解后，直接进样测定。该方法省去了通常必需的干灰化或湿消解过程，充分利用石墨炉本身所具的对样品进行部分预处理的功能，在无基体改进剂的条件下，快速测定样品中的Cu和Pb的含量。方法简便，快速，准确，实用，Cu和Pb的精密度试验的相对标准偏差分别为4.8%和5.3%；回收率分别为100%-110%和102%-105%。     

W/Cu梯度功能材料的高热负荷性能研究

用等离子体喷涂和热压方法制作了W/Cu梯度功能材料(FGM)样品,用大功率ND∶YAG激光对其进行了高热负载模拟实验.结果表明,在100～400MW@m-2的瞬时(脉冲宽度为4ms)热负载下,经过200～700次热循环,未发现有W-Cu复合体开裂.在123MW@m-2的功率密度下作用700次,发现钨表面有再结晶现象及严重的晶界腐蚀和裂纹,再结晶的平均晶粒尺寸约为5～10μm,垂直于表面呈柱状结构,再结晶层厚度约20～30μm.由于激光的淬冷效应,晶粒生长的趋势并不明显.在398MW@m-2功率密度下出现了明显的腐蚀坑,坑内呈疏松的蜂窝结构,坑的边缘出现了明显沉积区,能谱分析表明沉积区集聚了大量的金属杂质.等离子体喷涂试样比热压试样更易产生晶界的断裂的裂纹.在相同的热负荷条件下,W/Cu FGM的重量损失低于石墨材料的重量损失.     

Ab Initio Study on Structures and Vibrational Spectra of M+(H2O)Ar2 (M = Cu,Au)

Previous investigations have shown that it is difficult to acquire the infrared (IR) spectra of M⁺(H₂O) (M?=?Cu, Au) using a single IR photon by attaching an Ar atom to M⁺(H₂O). To explore whether the IR spectra can be obtained using the two Ar atoms tagging method, the geometrical structures, IR spectra and interaction energies are investigated in detail by ab initio electronic structure calculations for M⁺(H₂O)Ar₂ (M?=?Cu, Au) complexes. Two conceivable isomeric structures are found, which result from different binding sites for two Ar atoms. CCSD(T) calculations predict that two Ar atoms are most likely to attach to Cu⁺ for the Cu⁺(H₂O)Ar₂ complex, while the Au⁺(H₂O)Ar₂ complex prefers the isomer in which one Ar atom attaches to an H atom of the H₂O molecule and the other one is bound to Au⁺. Moreover, the calculated binding energies of the second Ar atom are smaller than the IR photon energy, and so it is possible to obtain the IR spectra for both Cu and Au species. The changes in the spectra caused by the attachment of Ar atoms to M⁺(H₂O) are discussed.     

Tribological Behavior of Multiply-Alkylated Cyclopentanes (MACs)-Cu Nanoparticles Composite Thin Film

Multiply-alkylated cyclopentanes (MACs) composite thin films containing Cu nanoparticles are fabricated on the octadecyltrichlorosilane (OTS)-modified substrate by a spin-coating technique. The thickness, wetting behavior, and nanoscale morphologies of the films are characterized by means of ellipsometry, contact angle measurement, and atomic force microscope (AFM). The friction and wear behaviors of the thin films sliding against Si₃N₄ ball are examined on a UMT-2MT tribometer in a ball-on-disk contact mode. The worn surfaces of the OTS-MAC-Cu composite film and the counterpart Si₃N₄ balls are investigated with a scanning electron microscope. Water contact angle on OTS-MAC-Cu composite film is higher than that of OTS-MAC film. OTS-MAC-Cu composite film exhibits higher load-carrying capacity and better friction reduction and antiwear behavior as compared with OTS-MAC film. This may be attributed to the load-carrying and self-repairing property of the Cu nanoparticles in the composite film and the formation of a transfer layer composed of OTS, MAC, and Cu on the rubbing surface of the counterpart ball.     

沟道层厚度对室温制备的In2O3薄膜晶体管器件性能的影响

在室温下采用直流磁控溅射以SiO₂/Si为衬底制备了不同沟道层厚度的底栅式In₂O₃薄膜晶体管,讨论了沟道层厚度对底栅In₂O₃薄膜晶体管的电学性能的影响。实验结果表明:器件的特性与沟道层厚度有关,最优沟道层厚度的In₂O₃薄膜晶体管为增强型,其阈值电压为2.5 V,开关电流比约为10⁶,场效应迁移率为6.2 cm²·V^-1·s^-1。     

一个次氯酸根比色荧光探针及其逻辑行为（英文）

利用次氯酸根(ClO-)的氧化性质和Cu+与Cu2+不同的配位性质,一种高效的可用于探测ClO-的铜离子化合物CS1被合成出来。通过吸收和发射光谱系统地研究了CS1对ClO-的传感性能。结果表明,在Cu+存在条件下,CS1的光谱强烈受到OCl-影响:最大吸收峰从396 nm红移到545 nm(Δλ=149 nm);520nm处的荧光强度降低近25倍。以Cu+和ClO-为输入信号,以470 nm和396 nm吸收峰比值(A470/A396)为输出信号,构建了一个基于CS1的AND逻辑门,并且可以用乙二胺四乙酸二钠盐(EDTA)对其进行简单重置。