Modeling emissivity of low-emissivity coating containing horizontally oriented metallic flake particles

The scattering and absorption cross sections of horizontally oriented metallic flake particles are estimated by extended geometric optics that includes diffraction and edge effects. Emissivity of the coating containing those particles is calculated using Kubelka–Munk theory. The dependence of emissivity of the coating on the radius, thickness, content of metallic flake particles and coating thickness is discussed. Finally, theoretical results are compared with the experimental measurements with Al/acrylic resin coating system and the results show that simulation values are in good agreement with experimental ones.     

Structure and Properties of Ultradrawn Polylactide/Thermoplastic Polyurethane Elastomer Blends

Highly oriented self-reinforced 80/20 blends of polylactide (PLA)/thermoplastic polyurethane elastomer (TPU) were successfully fabricated through solid hot stretching technology. Different from the isotropic sample, stress rose rapidly in a low strain region, and exhibited strain hardening for the drawn samples of the PLA/TPU blend. Superior mechanical properties of the blend, with the notched Charpy impact strength 150 KJ/m², and tensile strength 197 MPa, were achieved. With increasing hot stretch ratio, the storage modulus increased, the glass transition temperatures of the PLA-rich phase and TPU-rich phase in the blends moved to higher temperatures, and the melting temperature and crystallinity of the blend increased, indicating the stress-induced crystallization of the blend during drawing. The longitudinal fracture surfaces of the blends at different stretch ratios exhibited orderly arranged fibrillar bundle structure, which contributed to the significantly higher strength and toughness of the blend.     

Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD

In_0.82Ga_0.18As epilayers were grown on InP substrates using a two-step growth technique by LP-MOCVD. A homogeneous low-temperature (450 °C) In_0.82Ga_0.18As buffer layer was introduced to improve the crystalline quality of epilayers. The influence of low-temperature buffer layer deposition condition, such as thermal annealing duration, on the crystalline quality of the In_0.82Ga_0.18As epilayer was investigated. Double-crystal X-ray diffraction measurement, Hall measurement, and Raman scattering spectrum were used to evaluate the In_0.82Ga_0.18As epilayers. Atomic force microscope was used to study the surface morphology. It is found that the In_0.82Ga_0.18As epilayer, with buffer layer thermal annealing for 5 min, exhibits the best crystalline quality. The change of the surface morphology of the buffer layer after thermal annealing treatment was suggested to explain the phenomenon.     

Crystalline misfit-angle implications for solid sliding

For the contact of two finite portions of interacting rigid crystalline surfaces, we compute the pinning energy barrier dependency on the misfit angle and contact area. This simple model allows us to investigate a broad contact-size and angular range, thus obtaining the statistical properties of the energy barriers opposing sliding for a single asperity. These data are used to generate the distribution of static frictional thresholds for the contact of polycrystals, as in dry or even lubricated friction. This distribution is used as the input of a master equation to predict the sliding properties of macroscopic contacts.     

Steps and facets at the surface of soft crystals

We consider the shape of crystals which are soft in the sense that their elastic modulus μ is small compared to their surface tension γ, more precisely μa < γ where a is the lattice spacing. We show that their surface steps penetrate inside the crystal as edge dislocations. As a consequence, these steps are broad with a small energy which we calculate. We also calculate the elastic interaction between steps a distance d apart, which is a 1/d ² repulsion. We finally calculate the roughening temperatures of successive facets in order to compare with the remarkable shapes of lyotropic crystals recently observed by Pieranski et al. [#!Pieranski!#,#!EPJ!#]. Good agreement is found. Received 25 June 2001     

Shear-induced ordering of lamellar and gyroid structures observed in a nonionic surfactant/water system

The shear-induced ordering of lamellar and gyroid structures of a nonionic surfactant C₁₆E₇/D₂O system in a Couette shear cell ( 0.001 < < 10 s^-1, : shear rate) has been investigated by using a small angle neutron scattering technique. In the lamellar phase, the steady shear flow having > 0.01 s^-1 suppresses undulation fluctuations of lamellae (Maxwell effect). This suppression of fluctuations brings two effects; 1) shear-induced lamellae ordering toward a parallel orientation and 2) obstruction of a lamellar↦gyroid transition. It is quite interesting to note that there is a characteristic shear rate range ( 0.01 < < 0.3 s^-1), where both effects take place. We have also investigated the shear effects on the gyroid phase. Below the characteristic shear rate range, the gyroid structure keeps three-dimensional network lattice, while above the characteristic shear rate range, the gyroid structure transforms to the parallel orientation lamellae (shear-induced gyroid-lamellar transition). Thus the shear flow having the characteristic shear rate plays very important roles in shear ordering phenomena. Received 26 June 2000 and Received in final form 12 January 2001     

Growth of b-axis oriented VO2 thin films on glass substrates using ZnO buffer layer

VO₂ thin films are grown on glass substrates by pulsed laser deposition using vanadium metal as a target. In this study, a ZnO thin film was used as a buffer layer for the growth of VO₂ thin films on glass substrates. X-ray diffraction studies showed that the VO₂ thin film had b-axis preferential orientation on a c-axis oriented ZnO buffer layer. The thickness of the ZnO buffer layer and the oxygen pressure during VO₂ deposition were optimized to grow highly b-axis oriented VO₂ thin films. The metal-insulator transition properties of the VO₂ film samples were investigated in terms of infrared reflectance and electrical resistance with varying temperatures.     

不同核轴取向的O2的高次谐波

分子的高次谐波是强场超快物理的重要研究课题. 采用建立在形式散射理论基础上的频域方法计算了O₂在线偏振激光场下的高次谐波, 探讨了核轴被准直在与激光传输方向垂直的平面内时, 高次谐波随核轴与光电场偏振方向所成夹角θ₀的依赖关系. 结果表明: 各次谐波都是在θ₀约为45°时强度最大, 并有较宽的峰值宽度; 当偏离此角度, 高次谐波的强度变小; 到达平行或垂直取向时, 降到最低. 分析表明, 这是由于高次谐波的强度取决于分子基态的电子在动量空间中的电场方向的布居. 针对核轴被准直在激光传输方向与电场偏振方向所确定的平面内的情况, 计算了高次谐波随θ₀的依赖关系, 结果与前一种情况基本相同. 分析发现, 当核轴被准直固定后, 分子绕核轴旋转的角度ψ没有固定, 所以最后的高次谐波强度需要对不同的ψ 时的高次谐波的贡献求和平均. 平均后相当于波函数相对于核轴旋转对称, 从而导致O₂的高次谐波仅与θ₀有关, 而与核轴被准直在哪个面上无关.