Thermoanalytical methods in the study of inorganic thin films

Thermoanalytical (TA) methods are relatively seldom applied for assessing the physical and chemical proeprties of thin films, but they can be used in studies of composition, phase transitions and film—substrate interactions. In the present paper the possibilities of TA methods in thin film studies are reviewed. The thermoanalytical methods considered are the classical TG and DTA/DSC methods but some complementary methods will also be briefly mentioned. The main emphasis is given to true thin films. Details of sample preparation are also given. An important application of TA methods is characterization of precursors for the CVD growth of thin films, and this is also discussed.     

DC-plasma polymerization of pyrrole

DC-plasma-polymerized pyrrole (PP-Py) films deposited on metals were extensively characterized by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS), Reflection-Absorption IR Spectroscopy (RAIR), X-ray Photoelectron Spectroscopy (XPS), Scanning Tunneling Microscopy (STM), Glow Discharge Optical Spectroscopy (GDOS), electrical conductivity (ASTM Franklin test), and contact angle measurements. TOF-SIMS and RAIR showed no spectroscopic evidence of the presence of the pyrrole ring structure in any of the plasmadeposited films. The major parameter that affected their composition was found to be the pressure. Films deposited at low pressure were less hydrogenated than those polymerized at high pressure or in remote plasma conditions. Although all deposits oxidized slowly in air, their surface energy remained low over an extended period of time. The electrical conductivity of the PP-Py films was in the range of 10⁻³–10⁻⁴ S/cm, i.e., higher than that of amorphous carbon films.     

Fluorinated compounds for advanced IC interconnect applications: a survey of chemistries and processes

The semiconductor industry is now in the early stages of an unprecedented change in materials set for the integrated circuit (IC) interconnect structure. The traditional layers of aluminum conductors and silicon dioxide dielectrics are being replaced by copper thin films and a variety of low k candidates, respectively. In many cases, fluorine confers desirable properties on either the precursors or the final films. At the same time, fluorine presents some potentially adverse effects, which have led to a so-called “fear-of-fluorine” in interconnect applications. This paper will review the proposed uses of fluorinated compounds in the interconnect structures, covering both precursors and the resulting thin films. Both the status of technical studies, and the prospects for commercial implementation, will be addressed.     

Synthesis and Characterization of (βDiketonate)(7-norbornadienyl acetate)Copper(l) Complexes,Single-Crystal Structure of (hfac)Cu(7-AcO-NBD)

Copper(I) complexes of general formula (β-diketonate)Cu(7-AcO-NBD), where 7-AcO-NBD = 7-norbornadienyl acetate and β-diketonate = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate (1), 1,1,1-trifluoro-2,4-pentanedionate (2), 2,4-pentanedionate (3), 4,4,4-trifluoro-1-(2-thienyl)-1,3-butanedionate (4), 4,4,4-trifluoro-1-phenyl-1,3-butanedionate (5), were prepared from reactions of CuCl with Na(β-diketonate) in the presence of 7-AcO-NBD. AH compounds were characterized by elemental analyses, ¹H, ¹³C, ¹⁹F NMR and IR spectra. Single-crystal strucutre of compound 1 was determined by X-ray diffraction analysis that showed a mononuclear copper species with coordination of a chelating β-diketonate ligand through two oxygen atoms and the 7-AcO-NBD through its C? C double bond and an oxygen atom in the solid state. For compound 1, the crystal data are: triclinic, space group $ {\rm P}\bar 1 $, a= 5.4519(14) Å, b= 11.852(3) Å, c= 13.304(3) Å, α = 74.721(20)° β = 80.220(20)°, γ= 76.848(19)°, Z = 2, R_F = 0.060 and R_w = 0.064. Hot-wall chemical vapor deposition experiments revealed that compound 1 is suitable as a precursor for deposition of copper films in the temperature range 170–260 °C.     

Effect of Niobium Modifications to PZT (53/47) Thin Films Made by a Sol-Gel Route

Niobium-modified lead zirconate titanate thin films (PNZT) with nominal compositions, Pb_(1–0.5x) (Zr_0.53 Ti_0.47)_1–x Nb _x O₃:x = 0.02–0.07, have been prepared using a diol based sol-gel route. Single-layer (0.5 m) films were fabricated on platinised silicon substrates by spin-coating. The effect of niobium additions with regard to phase development, microstructure, and ferroelectric and dielectric properties were investigated for different annealing temperatures. For comparison, unmodified PZT films were also prepared. Niobium substitution increased the crystallisation temperatures for perovskite PNZT phase formation. The values of remanent polarisation P _r and dielectric constant _r were found to decrease with the introduction of Nb. For example, in films heated at 700°C for 15 min, the P _r value of an unmodified PZT film was 31 C cm^–2, compared to 17 C cm^–2 for an x = 0.05 PNZT film, whilst respective relative permittivity values fell from 1190 to 600. The highest Nb concentration film, x = 0.07, did not display any switchable polarisation characteristics, which is consistent with high levels of intermediate pyrochlore phase.     

Effect of polymerized silicic acid on mixed lipid-protein monolayers used as cell membrane models. I. Hemoglobin-stearoyl erythroceramide films

The effect of polysilicic acid on mixed monolayers of hemoglobin and stearoyl erythroceramide used as cell membrane models has been studied. The presence of the sphingolipid at the interface stabilizes the hemoglobin monolayer, hindering expulsion of its residues from the surface when the collapse pressure (ca. 23 mN/m) is reached. The interaction between the components of the mixed film results in non-additivity of their molecular areas to a degree depending on film composition and substrate pH. The presence of polysilicic acid in the substrate increases the miscibility of the components in the mixed monolayer as a result of ionic interaction between the silicic acid and the protein.     

Time-dependent mixing and demixing processes in binary lipid monolayers studied by mixed and separate spreading using film pressure and film potential measurements

Using both spreading techniques — mixed spreading and separate spreading- and, simultaneously, film pressure and film potential measurements, the mixing behavior of the following five binary systems was investigated and compared: 1) system 1,2-dilauroyl-phosphatidylethanolamine/cholesterol; 2) system 1,2-dimyristoyl-phosphatidylethanolamine/cholesterol; 3) system 1,2-dipalmitoyl-phosphatidylethanolamine/cholesterol; 4) system Na-eicosyl sulphate/hexadecanol; 5) system phosphatidic acid/1,2-dimyristoyl-phosphatidylethanolamine.Analyzing the time and concentration dependence of the /a isotherms and v/a isotherms (^s = film pressure, v ^s potential,a=average area per molecule in mixed films in the monolayers) of the binary monolayers it can be concluded that the components of the binary systems 1–4 are complete miscible in the monolayers. On the other hand the components of the system 5 are probably partially miscible only.     

The application of dielectric analysis to drying latex films

Measurements of real and imaginary capacitance (C andC) have been made during the drying of a film-forming latex. In one experiment dielectric measurements at frequencies between 1 Hz and 100 kHz were made simultaneously with gravimetric measurements on a microbalance. It was found that both the rate of water evaporation and the a.c. conductance decrease sharply at high polymer volume fraction. These results are discussed qualitatively in terms of a model for the film-forming process. In another experimentC andC were recorded at 10 Hz along with automatic measurements of the build-up of the scratch resistance of the film. It was found that the mechanical response to film-formation appears significantly earlier than the dielectric response. This is also discussed qualitatively in terms of the model.The authors would like to thank Dr. I. Abrahams, Dr. S. Bell, and Dr. M. Reading for useful discussions regarding this work and M. Bahra for his help with the TFA measurements.     

Alkoxide Derived SrBi2Ta2O9 Phase Pure Powder and Thin Films

Phase pure powder and thin films of the novel ferroelectric materials SrBi₂Ta₂O₉ (SBT) have been prepared using the organic precursors. The xero-gel formed was dried and characterized using TGA and DTA to determine the organic burn out and crystallization temperature of SBT. Powder X-ray diffraction was used systematically to check the crystallinity of SBT. Phase pure SBT powder was formed as low as 650°C and thin films at 600°C in comparison to other earlier reported work. SEM micrographs show a grain size of ≈0.1 μm and show crack free films with a film thickness of 2 μm.