Characterization of Cr‐doped Sb2Te3 films and their application to phase‐change memory

Phase‐change memory (PCM) is regarded as one of the most promising candidates for the next‐generation nonvolatile memory. Its storage medium, phase‐change material, has attracted continuous exploration. Along the traditional GeTe–Sb₂Te₃ tie line, the binary compound Sb₂Te₃ is a high‐speed phase‐change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb₂Te₃, called Cr–Sb₂Te₃ (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb₂Te₃ without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST_10.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10‐year data retention is 120.8 °C, which indicates better thermal stability than GST and pure Sb₂Te₃. PCM cells based on CST_10.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr–Sb₂Te₃ with suitable composition is a promising novel phase‐change material used for PCM with high speed and good thermal stability performances. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Structural and Dielectric Properties of Polythiophene/Chrom(III) Acetylacetonate Composites

The dielectric and morphological properties of polythiophene (PT) filled with various mass fractions of chrom(III) acetylacetonate (Cr(acac)₃), synthesized via chemical oxidative polymerization, are described. Significant shifts of the absorption peak of the C-S bond in the Fourier transform infrared (FT-IR) spectra indicated that the metal cations mostly interacted with sulfur atoms. Thermal analyses performed by differential scanning calorimetry (DSC) indicated that the cold crystallization temperature (T_cc) of PT decreased with increasing doping level. Microstructural differences were observed between PT and its composites in scanning electron microscopy (SEM) images. Dielectric measurements showed that the conductivity of the PT significantly increased with increasing doping level, from ?10^?7 S/m to ?10^?4 S/m at 10 kHz and 300 K.     

Saturable Excited State Absorption of Cr~(4 ) : YAG for Q-switching Nd : YAG Laser

ＳａｔｕｒａｂｌｅＥｘｃｉｔｅｄＳｔａｔｅＡｂｓｏｒｐｔｉｏｎｏｆＣｒ４＋ＹＡＧｆｏｒＱ┐ｓｗｉｔｃｈｉｎｇＮｄＹＡＧＬａｓｅｒＷＡＮＸｉａｏｋｅＬＩＮＬｉｈｕａｎｇＯＵＹＡＮＧＢｉｎＤＩＮＧＹａｎｈｕａＸＵＪｕｎＤＥＮＧＰｅｉｚｈｅｎ（Ｓｈａｎｇ...     

Cr^4＋：YAG,Cr^4＋：Mg2SiO4近红外荧光辐射温度特性研究

测量了Ｃｒ＾４＋，ＹＡＧ、Ｃｒ＾４＋，Ｍｇ２ＳｉＯ４晶体在室温和液氮温度下的荧光光谱，吸收光谱和激发态寿命，讨论了温度变化时，两种晶体中Ｃｒ＾４＋近红外辐射积分强度变化与激光发态寿命变化的关系，得出结论：在７７Ｋ￣３００Ｋ范围内，Ｃｒ＾４＋的＾３Ｔ２能级荧光辐射截面本身受温度影响不大，Ｃｒ＾４＋辐射荧光的变化，主要是由无辐射弛豫速率随温度变化而引起的。     

自锁模Cr：LiSAF激光器的实验研究

以功率为９００ｍＷ，波长为４８８ｎｍ的单线氩离子激光作为泵浦源，在腔内不加任何主动调制器和可饱和吸收体的情况下实现了Ｃｒ：ＬｉＳＡＦ激光器的飞秒级自锁模运转，得到了脉冲宽度为４０ｆｓ，重复频率为１００ＭＨｚ，平均输出功率为４５ｍＷ的稳定的锁模脉冲序列。     

Cr∶Nd∶GSGG晶体1.061 μm受激发射截面随温度变化特性研究

测量了Cr∶Nd∶GSGG晶体从 - 70℃到 +80℃温度下的荧光发射光谱和荧光寿命 ,计算了该晶体在不同温度下 1 .0 61 μm受激发射截面 ,获得在此温度变化范围内受激发射截面随温度的线性变化关系     

Simultaneous observation of low temperature 4f-4f and 3d-3d emission spectra in a series of Cr(III)(ox)Ln(III) assembly

We report here the low temperature emission spectra in the heterometal dinuclear 3d-4f assembled molecular system [(acac)₂Cr^III(μ-ox)Ln^III(HBpz₃)₂] (Cr(ox)Ln:acac⁻=acetylacetonate, ox²⁻=oxalate, HBpz₃⁻=hydrotris(pyrazol-1-yl)borate; Ln=La, Nd, Ho, Er , Tm and Yb) in comparison with those of Na[Cr(acac)₂(ox)] and [(HBpz₃)₂Ln(μ-ox)Ln(HBpz₃)₂](Ln=Nd and Er). From 10 to 150 K the Cr(ox)Ln complexes show a broad emission band around 800 nm from the ²E state of Cr(III) moiety. At room temperature no ²E-⁴A₂ emission was observed in the Cr(ox)Ln except for the La and Lu complexes. On warming from 10 to 300 K rapid quenching of the ²E-⁴A₂ emission of Cr(III) is suggested to result from the energy transfer from Cr to Ln in the Cr(ox)Ln. The excitation spectra and the life-time were also measured with monitoring the 4f-4f emission peaks of the Cr(ox)Yb complex.     

ICP与吸收光谱测定LiNbO3, Zn:LiNbO3晶体中Cr3+离子的分布及有效分凝系数

应用坩埚下降法生长了掺杂Cr与双掺杂Cr，Zn的LiNbO3晶体。测定了掺杂晶体不同部位的吸收系数。用电感耦合等离子体原子发射光谱(ICP)法测定了Cr离子在LN晶体中的浓度，并计算了Cr离子在LiNbO3晶体中的有效分凝系数。研究结果表明：在单掺杂Cr的LiNbO3晶体中，随着Cr^3 掺杂浓度从0．1增加到0．5mol％时，其有效分凝系数从3．75减少到2．49，Cr^3 离子在晶体中的浓度分布差异逐步减少；ZnO的掺入能有效地减少Cr^3 的分凝系数，然而ZnO掺杂浓度从3增加到6mol％时，其有效分凝系数且从1．85增加到2．25。可从ZnO组分对Cr离子的排斥作用及Zn离子在LN晶体中随掺杂数量变化的分凝现象解释了产生Cr离子浓度及有效分凝系数变化的原因。     

LD泵浦Cr4+∶YAG被动调Q锁模Nd∶Gd0.42Y0.58VO4激光器

理论和实验研究了LD泵浦Nd∶Gd0.42Y0.58VO4/Cr4+∶YAG被动调Q锁模激光器.在分析Cr4+∶YAG晶体能级结构和调Q锁模物理过程的基础上,通过数值模拟给出了Cr4+∶YAG调Q锁模的参量要求,然后进行了实验验证.实验中Cr4+∶YAG的初始透过率T0分别为86.3%、95%,输出镜的透过率T分别为10%、20%,在其他条件不变的情况下构成四种不同的组合,均实现了激光器的调Q锁模运转.实验结果表明,降低Cr4+∶YAG的初始透过率T0或提高输出镜透过率T有利于获得较好的锁模效果,与理论分析一致.     

High-resolution GaP Terahertz Spectrometer and Its Application to Detect Defects in Gamma-irradiated Glucose Crystal

We developed high-resolution GaP THz signal generator using Cr:Forsterite lasers with gratings as both a pump and a signal beam for difference-frequency generation. A line width of less than 500 MHz and a wide tunable frequency range (0.6–6.2 THz) provide sufficient resolution for measuring materials with sharp absorption bands using the generator as the light source for a THz spectrometer. This is suitable for materials such as gases or solid samples at low temperatures. We demonstrated the detection of defects in organic materials, as they appear as slight deviations in the absorption frequency in the THz region.