A model for the thermal conductivity of nanofluids – the effect of interfacial layer

A model for predicting the effective thermal conductivity of nanofluids is proposed. It has been documented that the interfacial layer at the solid (particle)/liquid interface and particle size is one of the major mechanisms for enhancing the thermal conductivity of nanofluids. Comparing with other classical models, the proposed model takes into account some additional effects including volume fraction, thickness, thermal conductivity of the interfacial layer and particle size. The proposed model is found to be better than the existing models since the predicted effective thermal conductivity of different types of nanofluids are closer to the experimental results.     

Microstructure and tribological behaviors of Ti6Al4V alloy treated by plasma Ni alloying

Ni modified layer was prepared on surface of the Ti6Al4V substrate by plasma surface alloying technique. Surface morphology, micro-structure, composition distribution, phase structure, and microhardness of the Ni modified layer were analyzed. Tribological performance of the Ni modified layer and Ti6Al4V substrate was investigated by using pin-on-disc tribometer. The results indicate that roughness of the Ni modified layer was increased due to formation of the micro-convex on the modified surface. The concentration of Ni gradually decreased from the surface to interior. The maximum content of Ni atoms was nearly 90%. The modified layer was composed of TiNi, Ti2Ni and Ti phases. The maximum microhardness of the Ni modified layer was about 677 HV_0.025 which was increased about two-fold of microhardness of the control Ti6Al4V substrate. Wear resistance of the Ni modified layer was improved obviously, and showed micro-abrasion wearing. The strengthened mechanism of the as-treated Ti6Al4V alloy is discussed.     

Negative plasma potential in unmagnetized DC electropositive plasma with conducting walls

Negative plasma potentials were obtained in DC hot filament unmagnetized electropositive argon plasma for sufficiently low neutral pressure. Double layers provide ion and electron confinement near the walls. The potential profiles from the center of the plasma to the potential minima are quite similar in shape to those observed when the plasma has positive plasma potentials. The primary electrons emitted from the filaments are important for charge conservation and for modification of the Bohm criteria but are not important for current balance.     

空间发展湍流气粒两相平面混合层的大涡模拟与统计

本文对空间发展的湍流气固两相平面混合层流动进行了大涡模拟研究,其中气相亚网格尺度（SGS）使用结构函数模型,气相控制方程组采用SIMPLE方法求解,固体颗粒运动用拉格朗日方法计算。计算结果正确重现了流体涡结构的卷起、合并和破碎过程,以及小尺寸颗粒在涡边缘（低涡度区）的局部富集现象。对直径分别为42μm、72μm和135μm分别进行了模拟,并将统计结果和实验测量结果（Hishida　et　al[1]）比较,表明两者的平均速度吻合很好,但颗粒数密度和脉动速度存在较明显的差异,因此有必要对亚网格应力和颗粒之间的耦合作用以及拟序结构的三维性对颗粒运动的影响开展深入研究。     

The improvement of InAs/GaAs quantum dot properties capped by Graphene

InAs self‐assembled quantum dots (QDs) were grown by molecular beam epitaxy on (001) GaAs substrate. Uncapped and capped QDs with GaAs and graphene layers were studied using atomic force microscopy and Raman spectroscopy. Graphene multi‐layer was grown by chemical vapor deposition and transferred on InAs/GaAs QDs. It is well known that the presence of a cap layer modifies the size, shape, and density of the QDs. According to the atomic force microscopy study, in contrast to the GaAs capped sample, which induce a dramatic decrease of the density and height of dots, graphene cap layer sample presents a slight influence on the surface morphology and the density of the islands compared with the uncapped one. The difference shown in the Raman spectra of the samples is due to change of strain and alloy disorder effects on the QDs. Residuals strain and the relaxation coefficients have been investigated. All results confirm the best crystalline quality of the graphene cap layer dots sample relative to the GaAs capped one. So graphene can be used to replace GaAs in capping InAs/GaAs dots. To our knowledge, such study has not been carried out until now. Copyright © 2013 John Wiley & Sons, Ltd.     

Pre- and post-breakdown electrical studies in ultrathin Al2O3 films by conductive atomic force microscopy

The loss of local dielectric integrity in ultrathin Al₂O₃ films grown by atomic layer deposition is investigated using conducting atomic force microscopy. I–V spectra acquired at different regions of the samples by constant and ramping voltage stress are analyzed for their pre- and post-breakdown signatures. Based on these observations, the thickness dependent dielectric reliability and failure mechanism are discussed. Our results show that remarkable enhancement in breakdown electric field as high as 130 MV/cm is observed for ultrathin films of thickness less than 1 nm.     

Electroelastic behaviour of an annular interfacial crack between dissimilar piezoelectric layers

An annular interfacial crack between dissimilar piezoelectric layers subjected to electroelastic loadings was investigated under an electrically impermeable boundary condition on the crack surface by using the Hankel transform technique and the Cauchy singular integral equation method. The stress intensity factors and energy release rates were determined. Numerical results reveal the effects of crack configuration, electric loads and material parameters on crack propagation and growth. The results should be useful for the design of piezoelectric composite structures and devices of high performance.     

Polycrystalline silicon films prepared by metal-induced crystallisation using pre- and post-deposited aluminium on amorphous silicon

We report on the successful fabrication of polycrystalline silicon films by aluminium-induced crystallisation (AIC) of Radio frequency (rf) plasma-enhanced chemical vapour deposited (PECVD) a-Si films. The effects of annealing at different temperatures (300 and 400°C), below the eutectic temperature of the Si–Al binary system, on the crystallisation process have been studied. This work emphasises the important role of the position of the Al layer with respect to the Si layer on the crystallisation process. The properties of the crystallised films were characterised using X-ray diffraction, Raman spectroscopy, ellipsometry, field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). With an increase in the annealing temperature, it was found that the degree of crystallisation of annealed a-Si/Al and Al/a-Si films increased. The results showed that the arrangement where the Al was on top of the a-Si had a more prominent effect on crystallisation enhancement than when Al was below the a-Si. The interfacial layer between the Al and a-Si film is crucial because it influences the layer-exchange process during annealing. The oxide layer formed between the Al and the a-Si layers greatly retards the crystallisation process in the case of the Al/Si arrangement. Our investigations suggest that polycrystalline Si films formed by AIC can be used as a seed layer in solar cell fabrication.     

Long-range chemical interactions in solid-state reactions: effect of an inert Ag interlayer on the formation of L10-FePd in epitaxial Pd(0 0 1)/Ag(0 0 1)/Fe(0 0 1) and Fe(0 0 1)/Ag(0 0 1)/Pd(0 0 1) trilayers

The effect of 0, 0.5, and 1?μm-thick Ag interlayers on the chemical interaction between Pd and Fe in epitaxial Pd(0?0?1)/Ag(0?0?1)/Fe(0?0?1)/MgO(0?0?1) and Fe(0?0?1)/Ag(0?0?1)/Pd(0?0?1)/MgO(0?0?1) trilayers has been studied using X-ray diffraction, ⁵⁷Fe Mössbauer spectroscopy, X-ray photoelectron spectroscopy, and magnetic structural measurements. No mixing of Pd and Fe occurs via the chemically inert Ag layer at annealing temperatures up to 400?°C. As the annealing temperature is increased above 400?°C, a solid-state synthesis of an ordered L1₀-FePd phase begins in the Pd(0?0?1)/Ag(0?0?1)/Fe(0?0?1) and Fe(0?0?1)/Ag(0?0?1)/Pd(0?0?1) film trilayers regardless of the thickness of the buffer Ag layer. In all samples, annealing above 500?°C leads to the formation of a disordered Fe_xPd_1?x(0?0?1) phase; however, in samples lacking the Ag layer, the synthesis of Fe_xPd_1?x is preceded by the formation of an ordered L1₂-FePd₃ phase. An analysis of the X-ray photoelectron spectroscopy results shows that Pd is the dominant moving species in the reaction between Pd and Fe. According to the preliminary results, the 2.2?μm-thick Ag film does not prevent the synthesis of the L1₀-FePd phase and only slightly increases the phase’s initiation temperature. Data showing the ultra-fast transport of Pd atoms via thick inert Ag layers are interpreted as direct evidence of the long-range character of the chemical interaction between Pd and Fe. Thus, in the reaction state, Pd and Fe interact chemically even though the distance between them is about 10⁴ times greater than an ordinary chemical bond length.     

The influence of SiCp oxidized on the interface layer and thermal conductivity of SiCp/Al composites

In this work, oxidation of silicon carbide particles (SiCp) at elevated temperature and its influence on the interface layer and thermal conductivity of SiCp/ZL101 composites prepared using pressure infiltration process were investigated respectively. It is found that initial temperature for the oxidation of SiCp is about 850?°C, and that the oxidation increment of SiCp and the thickness of SiO₂ layer increase with the increase in pre-oxidation temperature and time, when the oxidized temperature exceeds 1100?°C, or the duration time exceeds 2?h at 1100?°C, a small amount of ablation will take place on the SiCp, as well as the oxidized layer has some loss. The formation of SiO₂ layer can provide certain interface reactions with interface layers (3.1–6.36?μm), and the higher the thickness of SiO₂ layer, the thicker the interface layer in SiCp/Al composites. However, the thickness of SiO₂ layer is more than 5.9?μm, which is not benefit for the formation of interface layer. With the increase in the thickness of interface layer, thermal conductivity declines, but is not linear.