多壳层铜纳米线结构和电子特性的第一性原理研究

基于密度泛函理论框架下的第一性原理计算,系统地研究了多壳层Cu纳米线的稳定结构和电子特性.得到不同线径多壳层Cu纳米线的平衡态晶格常数相差不大,都表现出金属特性,且其单原子平均结合能和量子电导随着纳米线直径的增加而增加.纳米线中内壳层Cu原子表现出体相结构Cu原子相似的电子特性,而表面壳层由于配位数的减少,其3d态能量范围变窄且整体向费米能级发生移动.电荷密度分析表明,相对于体相Cu晶体中原子间的相互作用,纳米线表面壳层Cu原子与其最近邻原子间的相互作用明显增强.     

Use of Cu dopant and it's doping effects on polyaniline conducting system in water and tetrahydrofuran

The structural modification and properties of polymeric materials are of utmost importance in deciding their applications. In the present study, the synthesis of polyaniline (PANI) has been carried out via chemical oxidation in acidic medium by potassium-dichromate and the yield of synthesized polyaniline was found to be 75-80%. The copper per chlorate tetrabenzonitrile salt (CuClO₄·4BN) used for chemical doping in synthesized polyaniline is stable in organic solvent like acetonitrile (AN) and benzonitrile (BN). The effect of Cu⁺¹ oxidation state (dopant) in polyaniline has been characterized by FTIR. Electrical and dielectric measurements show the decrease in the intensity of the Cu⁺¹ salt signal and the appearance of a radical signal due to the formation of oxidative coupled in polymeric species. Electrical and dielectric properties of doped polyaniline samples show significant changes due to the effect of dopant (CuClO₄·4BN). It is observed that the conductivity is contributing both by formation of ionic complex and particularly dominated by electronic due to the mobility of charge carriers along the polyaniline chain.     

Tb掺杂Si纳米线的光致发光特性

以金属Au-Al为催化剂,在温度为1 100 ℃,N₂气流量为1 500 sccm、生长时间为30 min,从Si(100)衬底上直接生长了直径约为50～120 nm、长度为数百纳米的高密度、大面积的Si纳米线。然后,利用Tb₂O₃在不同温度(1 000～1 200 ℃)、掺杂时间(30～90 min)和N₂气流量(0～1 000 sccm)等工艺条件下对Si纳米线进行了Tb掺杂。最后,对Si(100)衬底进行了Tb掺杂对比。室温下,利用荧光分光光度计(Hitachi F-4600) 测试了Tb掺杂Si纳米线的光致发光特性。实验研究了不同掺杂工艺参数(温度、时间和N₂气流量)对Tb3+绿光发射的影响。根据Tb3+能级结构和跃迁特性对样品的发射光谱进行了分析。结果表明,在温度为1 100 ℃,N₂气流量为1 500 sccm、时间为30 min等条件下制备的Si纳米线为掺杂基质,Tb掺杂温度为1 100 ℃,N₂气流量为1 000 sccm、光激发波长为243 nm时,获得了最强荧光发射,其波长为554 nm(5D₄→7F₅),同时还出现强度相对较弱的494 nm(5D₄→7F₆),593 nm(5D₄→7F₄)和628 nm(5D₄→7F₃)三条谱带。Tb掺杂的体Si衬底在波长554 nm处仅有极其微弱的光致发光峰。     

高压下某些导电高分子色散关系的研究

利用晶格动力学方法,研究在高压下几种导电高分子具有不同晶格链时的色散关系及其曲线的变化.链间耦合作用的减弱使横波与纵波的ω差值相应增大,且在BZ边界处拉开一个间隙,这是维度作用的结果.     

温度对金属纳米线势能分布的影响

采用三维分子动力学模拟方法,以面心立方金属银为研究对象,基于Finnis-Sinclair型嵌入原子法(EAM)多体势,模拟研究了纳米线势能分布特征在常温下及其在不同温度直到熔化过程中的变化,给出了常温及不同温度银纳米线势能分布比例和势能分布函数.结果表明:常温下,纳米线高势能原子比例随纳米线横截面尺寸的减小而增大,势能分布函数曲线各峰位几乎与纳米线横截面尺寸无关;纳米线熔化前的势能分布函数曲线具有多个波峰,随着温度增加,峰数减少且峰位右移;熔化后,多峰特征消失,只有一个宽化的峰.     

多孔硅-导电聚酯材料复合发光器的光学特性研究

poly-4-dicyanomethylene-4H-cyclopenta[2,1-b:3,4-b]dithiophene monolayer(PCDM)是一种导电,低导带聚酯材料。如果在多孔硅纳米结构中附上一层以自组方式生成的PCDM单分子层,就可以制成能够产生稳定电致发光的器件。发光器的结构是金／PCDM／多孔硅／硅／铝,发光器的电致发光,在白天可用肉眼观察到。有很宽的发光波长,几乎覆盖了整个可见光区域且峰值位于650nm,发光器的面积为1cm^2,启动正向电压在14－30V,电流约300mA。经长时间测试,发光器的稳定性很好,在空气中放置3个月,在输入功率不变的情况下,发光强度也不发生变化,当施以反向电压时,样品仍可以发光而且稳定性较高,在250h内I－V未发生明显变化,扫描电镜图像显示PCDM覆盖的表面要比多孔硅表面平整,而PCDM分子有可能进入到多孔硅纳米孔径当中去,起到了提高发光器稳定性和延长其寿命的作用。     

纳米金丝的生长序列、奇特结构和性质

文章扼要报道了用遗传算法和分子动力学以及密度泛函理论对纳米金丝的结构和电子性质随直径变化进行系统研究的结果,发现对于较细的纳米金丝、主要呈螺旋和多层壁的圆柱结构,而当纳米金丝的直径大于3mm时,则呈fcc块体类结构,并且晶化过程是从轴心开始的,振动谱和电子性质和也随纳米金丝半径增大而由分子型向块体行为转变。     

（FeCp2）0．65FNi（C3S7）2]的合成及表征

合成了一种新型的导电配位型化合物（FeCp2）0．65FNi（C3S7）2].通过元素分析（EA）,电感耦合等离子体原子发射光谱（ICP—AES）,核磁共振（^1HNMR）,紫外光谱（UV）对该化合物进行了表征。     

Investigation of thermostability and phonon–phonon interactions in Mo6S3I6 nanowires by Raman scattering spectroscopy

Detailed Raman scattering measurements were performed on molybdenum–sulfur–iodine nanowires (Mo₆S₃I₆). At room temperature, 21 well‐resolved Raman modes were experimentally observed for the first time in this new compound. The phase stability and vibrational properties of the nanowires were investigated by different temperature treatments. High‐temperature Raman spectra showed that the phase separation of Mo₆S₃I₆ nanowires took place between 573 and 673 K, followed by appearance of a new mode at 819 cm⁻¹ characteristic of the MoO₃ phase. Low‐temperature Raman scattering spectra showed a significant difference in phonon–phonon interactions between internal and external Raman modes of Mo₆S₃I₆ nanowires. These interesting vibrational properties can give new insights for improved material preparation and achievement of higher conductivity and other functional properties of these otherwise interesting materials. Copyright © 2009 John Wiley & Sons, Ltd.