微米级锥形光纤的近场光镊

分别从理论和实验上分析了光纤表面倏逝场强度的分布(z=10 nm, 100 nm, 500 nm,1 000 nm),研究了微米级光纤光镊对微球的操纵。实验中把直径为125 m的普通单模光纤拉制成锥腰直径为2 m的锥形光纤。当光纤通光时,在光纤锥区倏逝场的作用下,直径3 m的聚苯乙烯微球保持平衡状态,并且光纤附近的微球被吸引到光纤表面,以5.3 m /s的速度沿着光束的传播方向运动。这个实验不仅实现了对微球的成功捕获,而且验证了光纤光镊的力学作用。光纤光镊对微球的无接触、无损伤操纵,将在生物传感领域有潜在的应用。     

中心核对四硫富瓦烯端基星型分子结构和性质的影响

采用密度泛函理论方法对以四硫富瓦烯(TTF)为端基、 苯乙烯为桥的5种不同中心核(富电子核: 氮、 三聚咔唑及三聚吲哚; 缺电子核: 三嗪及三聚喹喔啉)构成的星型三支D-π-A型化合物的几何结构、 电子吸收光谱及电荷转移性质进行了研究. 结果表明, 通过改变中心核的类型, 可有效调节LUMO能级, 改变能隙的大小. 电荷差分密度及跃迁密度矩阵分析结果表明, 两支内的TTF端基与核到共轭桥链的电荷转移跃迁及少量的π→π^*跃迁对高能吸收带有贡献; 缺电子核化合物的低能吸收峰主要是TTF端基到桥链和中心核的电荷转移跃迁贡献, 不同于富电子核化合物明显的TTF贡献的支内定域电荷转移跃迁. 重组能计算表明, 除化合物NST(中心核为氮)外, 其余4个化合物的空穴重组能(λ_h)与电子重组能(λ_e)相当, 中心核为三聚咔唑的化合物CST重组能相对较小.     

借助功能阳离子实现敏化发光的铕配合物的溶剂效应的研究

在离子缔合型铕配合物Eu(tta)₄·DEASPI中,借助功能阳离子DEASPI的电荷转移激发态可以实现对铕离子的单光子与双光子的敏化发光,其能量传递遵循Förster机制。将Eu(tta)₄·DEASPI溶解于多种有机溶剂中(丙酮、DMF、乙醇和乙腈),发现溶剂效应对于该能量传递体系的影响非常显著。借助光谱测量,发现在乙腈溶液中能量传递效率远高于其他三种溶剂。本文对造成溶剂效应的多种因素进行了详细的分析。     

小鼠甲醇氧化应激的电子顺磁共振的研究

建立了小鼠甲醇中毒的氧化应激模型,研究了甲醇诱导小鼠产生氧化应激状态,探讨了大黄中草药和维生素C对小鼠甲醇氧化应激的保护作用. 模型小鼠共分为5个组：空白组、对照组、甲醇应激组、大黄组、维生素C（Vc）组. 利用电子自旋捕捉技术研究了小鼠甲醇氧化应激不同模型组小鼠体内的肝、肾、脾、心、肺和脑中产生的自由基强度的变化. 结果表明： 甲醇诱发了小鼠体内自由基的产生,甲醇组和生理盐水组相比,自由基的强度明显增强（显著性差异统计指标P<0.01);而大黄和Vc对小鼠甲醇氧化应激有保护作用,大黄组、Vc 组和甲醇组相比自由基的强度则明显降低（P<0.01).     

ESR自旋捕集技术的发展和在生物医学研究中的应用

ESR是研究自由基最直接和最有效的技术,但是这些自由基必须是相对稳定的,而且要达到一定浓度才能用ESR技术检测和研究. 而生物体系中产生的自由基大部分是不稳定的,这是常规ESR波谱仪无法检测的. 为了克服ESR技术的这一局限性,发展了自旋捕集技术,这是目前研究生物和医学体系中活泼自由基应用最多也是最成功的方法, 每年都有新的自旋捕集剂合成和大量在生物医学应用的报道,为自由基生物医学的研究和发展做出了巨大贡献.  作者建立和发展了捕捉超氧阴离子自由基、羟基自由基、脂质过氧化产生的脂类自由基、一氧化氮自由基和单线态氧及一氧化氮和氧自由基同时检测技术. 利用这些技术开展了细胞、组织产生自由基机理,天然抗氧化剂的筛选及一些重大疾病如炎症、心脏病、老年痴呆症、帕金森综合症,中风,辐射损伤,蛋白质氧化,植物光合系统中产生活性自由基和植物的发病机理研究中的应用,取得了一系列研究结果.     

胶束辅助的酞菁给体-碳纳米管受体超分子自组装及光诱导长寿命电荷分离态

利用十二烷基硫酸钠(SDS)阴离子胶束能够稳定分散单壁碳纳米管(SWCNT)和解聚富集四磺酸锌酞菁(ZnPcS₄)的能力, 组装了ZnPcS₄-SWCNT的电子给体-受体对来模拟光合作用的原初电子转移过程. 用稳态和时间分辨荧光法研究了相应的给体-受体分子间和分子内的光诱导电子转移速率, 用激光闪光光解技术检测了生成的电荷分离态. ZnPcS₄-SWCNT的电子给体-受体组装体在707 nm处出现了基态特征吸收峰, 但是复合体不产生荧光, 这主要归因于有效的分子内光诱导电子转移过程. 瞬态吸收光谱检测到相应的离子对, 动力学衰减结果表明, 电荷分离态的寿命长达42 μs. 这一长寿命电荷分离态的形成, 主要是因为ZnPcS₄是良电子给体(低氧化电位), SWCNT是好的电子受体, 使得三重态电子转移能够发生, 生成三重态电荷分离态.     

Observation of charge transfer states of F4-TCNQ on the 2-methylpropene chemisorbed Si(1 0 0)(2 × 1) surface

We have investigated the valence electronic states of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F₄-TCNQ) on the 2-methylpropene chemisorbed Si(1 0 0)(2 × 1) surface using valence photoelectron spectroscopy. Since the electron affinity of condensed F₄-TCNQ is 5.24 eV and the energy from the valence band maximum of the 2-methylpropene saturated Si(1 0 0)(2 × 1) surface to the vacuum level is 4.1 eV, spontaneous charge transfer would be expected in the present system. At sub-monolayer coverage of F₄-TCNQ, characteristic peaks are observed at 1.1 and 2.5 eV below Fermi energy. The former peak is assigned to a singly occupied affinity level, and the latter is ascribed to a relaxed highest occupied molecular orbital of adsorbed F₄-TCNQ. The work function change is increased up to +1.3 eV as a function of F₄-TCNQ coverage. These results support the occurrence of charge transfer into F₄-TCNQ on the 2-methylpropene saturated Si(1 0 0)(2 × 1) surface.     

Dynamics of the charge transferred states relevant to magnetic phase transition in rubidium manganese hexacyanoferrate

Photoinduced charge transfer dynamics in the photomagnetic material RbMn[Fe(CN)₆], which exhibits a magnetic phase transition with a large hysteresis loop (230-300 K), has been investigated by observing the CN⁻ stretching modes, which are sensitive to the valences of the adjacent transition metal ions. Mid-infrared transient absorption measurements were performed between 2013 and 2179 cm⁻¹ to observe the transient and persistent products. The sample in the high-temperature phase was excited by 400 nm laser pulses at the ligand to metal charge transfer band near the high-temperature end of the hysteresis loop. Bleach of the Fe³⁺-CN⁻-Mn²⁺ band representing a decrease of the high-temperature phase and increases of the Fe²⁺-CN⁻-Mn³⁺ and Fe²⁺-CN⁻-Mn²⁺ bands were observed in picosecond time region, indicating a transient production of charge transferred states.     

Recombination processes in europium-doped cadmium iodide crystals

Results of comprehensive research into optical and luminescent-kinetic characteristics of europium-doped cadmium iodide crystals excited by nitrogen laser radiation, α-particles, and x-rays are presented. Crystals under study have been grown by the Bridgman–Stockbarger method. The doping EuCl₃ admixture was introduced into the charge in quantities of about 0.05 and 1.0 mol%. Impurity absorption detected in the near-edge region of the crystals is interpreted as part of the Eu²⁺ ion long-wavelength band associated with f–d-transitions. The cation impurity and matrix defects in CdI₂:Eu²⁺ crystals create complex centers responsible for emission with a maximum in the 580–600-nm region. The short component in the luminescence decay kinetics of weakly-doped crystal excited by α-particles and x-ray photons is due to the exciton emission characteristic of CdI₂. The slow component in the scintillation pulse results from recombination of charge carriers followed by creation of exciton-like states on the defect-impurity centers. Laser or x-ray excitation induces light-sum accumulation on the trapping levels at a depth of 0.2–0.6 eV that is mainly related to matrix microdefects. Trapping centers associated with the chlorine impurity are observed in the heavily-doped crystal. Photostimulated luminescence at 85 K arising at the electron stage of the recombination process is caused by recombination of electrons released from F-type centers with holes localized near the activator. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 3, pp. 358–364, May–June, 2009.     

Electric-field effect on shallow impurity ground state in nanowire superlattice

We have developed a variational formalism to analyze the effect of electric field on the donor ground state in a nanowire superlattice with cylindrical cross-section. The trial function is taken as a product of the free-electron ground state wave function with an envelope function that is a solution of a differential equation arising from the Schrödinger variational principle. We establish a close relationship between the donor ground state energy and density of charge induced by the unbound electron at the point of donor location. Also, we show that electric field applied along the crystal growth direction can easily shift the peak position of the free-electron density distribution from the central well toward one of the nanowire ends, providing a variation of the average electron-ion separation and a considerable alteration of the donor ground state energy.