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31.
1IntroductionandMainResultsItiswellknownthatwhenp'--4q>0,secondorderautonomoussystemhastwocharacteristicexponentsfsothefollowingpropositionsareobvious.Proposition1Assumeq<0,then(1.1)hastwocharacteristicexponentswithoppositesigns.Proposition2Assumeq>0andp'… 相似文献
32.
33.
P-正则半群的双序集 总被引:1,自引:0,他引:1
本文刻划了双序集E为某P-正则半群的幂等元双序集的充要条件.所得定理不仅推广了D.Easdown关于带的双序集的结论,而且导出了正则*-半群的幂等元双序集的一个刻划.进而还对P-正则半群的若干特殊情形及向非正则半群的推广进行了讨论. 相似文献
34.
James H. Curry 《Journal of statistical physics》1981,26(4):683-695
In a recent article D. Ruelle [inLecture Notes in Physics, No. 80 (Springer, Berlin, 1978)] has conjectured that for the Hénon attractor its measure theoretic entropy should be equal to its characteristic exponent. This result is known to be true for systems which satisfy Smale's Axiom A. In this article we report the results of our computations which suggest that Ruelle's conjecture may be true for the Hénon attractor. Further, in our study we are confronted with fundamental questions which suggest that certain existence theorems from ergodic theory are not sufficient from a computational point of view. 相似文献
35.
36.
Lutz Mattner 《Probability Theory and Related Fields》2004,130(2):151-166
This is a contribution to the theory of sums of independent random variables at an algebraico-analytical level: Let Prob denote the convolution semigroup of all probability measures on with all moments finite, topologized by polynomially weighted total variation. We prove that the cumulant sequence regarded as a function from Prob into the additive topological group ofall real sequences, is universal among continuous homomorphisms from Prob into Hausdorff topological groups, in the usual sense that every other such homomorphism factorizes uniquely through . An analogous result, referring to just the first cumulants,holds for the semigroup of all probability measures with existing rth moments. In particular, there is no nontrivial continuous homomorphism from the convolution semigroup of all probability measures, topologized by the total variation metric, into any Hausdorff topological group.Mathematics Subject Classification (2000): 60B15, 60E10, 60G50 相似文献
37.
Matvei Libine 《Journal of Functional Analysis》2003,203(1):197-236
This article provides a geometric bridge between two entirely different character formulas for reductive Lie groups and answers the question posed by Schmid (in: Deformation Theory and Symplectic Geometry, Mathematical Physics Studies, Vol. 20, Kluwer Academic Publishers, Dordrecht, 1997, pp. 259-270).A corresponding problem in the compact group setting was solved by Berline et al. (Heat Kernels and Dirac Operators, Springer, Berlin, 1992) by an application of the theory of equivariant forms and particularly the fixed point integral localization formula. This article (besides its representation-theoretical significance) provides a whole family of examples where it is possible to localize integrals to fixed points with respect to an action of a noncompact group. Moreover, a localization argument given here is not specific to the particular setting considered in this article and can be extended to a more general situation.There is a broadly accessible article (Libine, A Localization Argument for Characters of Reductive Lie Groups: An Introduction and Examples, 2002, math.RT/0208024) which explains how the argument works in the case, where the key ideas are not obstructed by technical details and where it becomes clear how it extends to the general case. 相似文献
38.
KunYuGUO 《数学学报(英文版)》2003,19(3):513-522
This paper is a brief and selective survey on classification of Hardy Submodules over the polydisk. The survey reports some progress in classification of Hardy submodules. 相似文献
39.
The electronic structures of doped Sb2O5 by IV-family elements (Si, Ge and Sn) were examined using the density function theory (DFT). Density of states (DOSs) results
showed that the substituted IV-family elements act as acceptors in Sb2O5. Partial DOSs indicates that by substituting Ge(Ge
Sb
) or Sn(Sn
Sb
), there may be a larger contribution to the total DOSs near E
F
than by substituting Si, which suggests that doping Ge or Sn in Sb2O5 produces better ptype doping compared to doping Si. Formation energy results show that IV-family elements are more likely
to exist in the substituted position rather than in the interstitial position in Sb2O5, decreasing any self-compensation effect and making it easier for IV-family elements to realize ptype doping in Sb2O5. Ionization energy results show that Ge
Sb
or SnSb, two among the three impurities considered, act as shallow acceptors in Sb2O5, thus producing a higher concentration of holes.
相似文献
40.
介绍了Rod-pinch二极管的基本结构和工作原理,采用Laminar模型分析了Rod-pinch二极管中的粒子运动过程及其阻抗特性。考虑背景空间离子电荷的影响,用1维Laminar方程分析Rod-pinch二极管中电子的自箍缩过程,并且利用Magic程序对其中的粒子运动进行数值模拟,求解二极管中的电压和电流,最终得出二极管的阻抗特性,在较低电压下,负极性RPD的性能明显不如正极性RPD。根据临界电流经验公式,初步验证Laminar理论模型的可行性。 相似文献