磁场对非对称量子点中极化子性质的影响

采用线性组合算符和幺正变换方法研究磁场对非对称量子点中弱耦合磁极化子性质的影响.导出了非对称量子点中弱耦合磁极化子的振动频率、基态能量和基态结合能随量子点的横向和纵向有效受限长度、磁场和电子-声子耦合强度的变化关系.数值计算结果表明:非对称量子点中弱耦合磁极化子的基态能量和基态结合能随量子点的横向和纵向有效受限长度的增加而迅速增大.随回旋频率的增加而增大,随电子-声子耦合强度的增加而减小.     

量子尺寸效应对原子表面扩散运动具有调制作用

近日，中科院物理所表面物理国家重点实验室SF4研究组及其合作者在薄膜生长动力学研究中取得新进展．他们从实验和理论上研究了Si（111）单晶衬底上Pb薄膜中的厚度变化对原子表面扩散运动的影响，证明了量子尺寸效应对原子表面扩散运动的调制作用．该成果被选作封面图片发表在美国《物理评论快报》上．     

波前编码系统成像特性的空间域分析

波前编码技术在大幅度地增加光学系统景深的同时,可以抑制各种离焦类型的像差。目前波前编码系统的成像特性分析大多是基于空间频率域的分析,在应用稳定相法导出三次型相位板波前编码系统的点扩展函数近似解析式的基础之上,描述了点扩展函数的边界、带宽与振荡等特性,分析了波前编码系统对离焦、像散、彗差等常见像差的敏感性,从空间域进一步分析了波前编码系统的成像特性。     

Photon-Assisted Conductance Structure for a Quantum Dot

We investigate theoretically the electron transport of a two-level quantum dot irradiated under a weak laser field at low temperatures in the rotating wave approximation. Using the method of the Keldysh equation of motion for nonequilibrium Green function, we examine the conductance for the system with photon polarization perpendicular to the tunnelling current direction. It is demonstrated that by analytic analysing and numerical examples, a feature of conductance peak splitting appears, and the dependence of conductance on the incident laser frequency and self-energy are discussed.     

Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates

GaAs （001） substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of lnAs quantum dots （QDs）. InAs dots are grown on the stripe-patterned substrates by solid source molecular beam epitaxy. A thick buffer layer is deposited on the strip pattern before the deposition of InAs. To enhance the surface diffusion length of the In atoms, InAs is deposited with low growth rate and low As pressure. The AFM images show that distinct one-dimensionally ordered InAs QDs with homogeneous size distribution are created, and the QDs preferentiMly nucleate along the trench. With the increasing amount of deposited InAs and the spacing of the trenches, a number of QDs are formed beside the trenches. The distribution of additional QDs is long-range ordered, always along the trenchs rather than across the spacing regions.     

Atom-photon entanglement in the system with competing k-photon and l-photon transitions

We have investigated the evolution of the atomic quantum entropy and the entanglement of atom-photon in the system with competing k-photon and l-photon transitions by means of fully quantum theory, and examined the effects of competing photon numbers （k and l）, the relative coupling strength between the atom and the two-mode field （A/g）, and the initial photon number of the field on the atomic quantum entropy and the entanglement of atom-photon. The results show that the multiphoton competing transitions or the large relative coupling strength can lead to the strong entanglement between atoms and photons. The maximal atom-photon entanglement can be prepared via the appropriate selection of system parameters and interaction time.     

Semiclassical approximation for transmission through open Sinai billiards

We use a semiclassical approximation to study the transport through the weakly open chaotic Sinai quantum billiards which can be considered as the schematic of a Sinai mesoscopic device,with the diffractive scatterings at the lead openings taken into account.The conductance of the ballistic microstructure which displays universal fluctuations due to quantum interference of electrons can be calculated by Landauer formula as a function of the electron Fermi wave number,and the transmission amplitude can be expressed as the sum over all classical paths connecting the entrance and the exit leads.For the Sinai billiards,the path sum leads to an excellent numerical agreement between the peak positions of power spectrum of the transmission amplitude and the corresponding lengths of the classical trajectories,which demonstrates a good agreement between the quantum theory and the semiclassical theory.     

Maximum confidence measurements via probabilistic quantum cloning

Probabilistic quantum cloning(PQC) cannot copy a set of linearly dependent quantum states.In this paper,we show that if incorrect copies are allowed to be produced,linearly dependent quantum states may also be cloned by the PQC.By exploiting this kind of PQC to clone a special set of three linearly dependent quantum states,we derive the upper bound of the maximum confidence measure of a set.An explicit transformation of the maximum confidence measure is presented.     

Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated using the temperature-dependent photoluminescence from 12 K to 450 K.The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K.The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth.The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes.The incorporation of bismuth also induces alloy non-uniformity in the quantum well,leading to an increased photoluminescence linewidth.     

核壳结构硒化镉/硫化镉/巯基乙酸量子点载流子输运特性

采用水溶液法合成了巯基乙酸(TGA) 包覆的CdSe 量子点. 通过X 射线粉末衍射和高分辨透射显微镜检测结果证实, 合成得到闪锌矿结构CdSe 量子点. 能谱图和傅里叶变换红外光谱图结果说明, 在核CdSe 纳米粒子表面与配体TGA 之间有CdS 壳层结构形成. 利用样品表面光电压(SPV) 谱, 指认CdSe 量子点精细能带结构以及各自对应的激发态特征: 475 nm (2.61 eV) 和400 nm (3.1 eV) 两个波长处的SPV 响应峰分别与CdSe 核和CdS 壳层带-带隙跃迁相对应; 370 nm (3.35 eV) 附近SPV 响应峰可能与TGA 中羰基与巯基或羧基之间发生的n →π^* 跃迁有关. 场诱导表面光电压谱结果证实, 合成的CdSe 量子点具有明显的N 型表面光伏特性, 而上述n→π^* 跃迁则具有P 型表面光伏特性. 荧光光谱谱线均匀增宽以及SPV 响应峰位蓝移, 说明样品具有明显的量子尺寸效应. 结合不同pH 值下合成的CdSe 量子点的SPV 谱和表面光声谱发现, SPV 响应强度与表面光声光谱信号强度变化趋势恰好相反. 上述样品表面光伏效应表明, CdSe 量子点表面和相界面处的精细电子结构以及光生载流子的输运特性均与量子点的尺寸大小存在某种内在联系. 关键词： 硒化镉量子点 光生载流子 表面光电压谱 表面光声光谱