Comment on “Role of the velocity frame of reference in thermodiffusion in liquid mixtures” by M. Eslamian,C.G. Jiang and M.Z. Saghir

We analyze the material transport equations (MTE) derived by Eslamian and co-authors and address the criticism expressed regarding the approach formulated in our previous work. In doing so, we show that the MTE formulated by Eslamian and co-authors are valid only in closed stationary non-isothermal systems in combination with the restrictions on the Onsager coefficients formulated in our work which is criticized, and that for non-stationary systems the approach we took can be used.     

Decomposition model for phonon thermal conductivity of a monatomic lattice

An analytical treatment of decomposition of the phonon thermal conductivity of a crystal with a monatomic unit cell is developed on the basis of a two-stage decay of the heat current autocorrelation function observed in molecular dynamics simulations. It is demonstrated that the contributions from the acoustic short- and long-range phonon modes to the total phonon thermal conductivity can be presented in the form of simple kinetic formulas, consisting of products of the heat capacity and the average relaxation time of the considered phonon modes as well as the square of the average phonon velocity. On the basis of molecular dynamics calculations of the heat current autocorrelation function, this treatment allows for a self-consistent numerical evaluation of the aforementioned variables. In addition, the presented analysis allows, within the Debye approximation, for the identification of the temperature range where classical molecular dynamics simulations can be employed for the prediction of phonon thermal transport properties. As a case example, Cu is considered.     

事后分层方法及其在交通运输抽样调查中的应用

本文介绍事后分层技术，说明了它不仅可用于简单随机抽样，而且可以用于放回ＰＰＳ抽样。给出了事后分层估计量的形式，证明了它的无编性，并给出了它在交通运输抽样调查中的应用。     

Geometric phase of an open double-quantum-dot system detected by a quantum point contact

We study theoretically the geometric phase of a double-quantum-dot(DQD) system measured by a quantum point contact(QPC) in the pure dephasing and dissipative environments, respectively. The results show that in these two environments, the coupling strength between the quantum dots has an enhanced impact on the geometric phase during a quasiperiod. This is due to the fact that the expansion of the width of the tunneling channel connecting the two quantum dots accelerates the oscillations of the electron between the quantum dots and makes the length of the evolution path longer.In addition, there is a notable near-zero region in the geometric phase because the stronger coupling between the system and the QPC freezes the electron in one quantum dot and the solid angle enclosed by the evolution path is approximately zero,which is associated with the quantum Zeno effect. For the pure dephasing environment, the geometric phase is suppressed as the dephasing rate increases which is caused only by the phase damping of the system. In the dissipative environment,the geometric phase is reduced with the increase of the relaxation rate which results from both the energy dissipation and phase damping of the system. Our results are helpful for using the geometric phase to construct the fault-tolerant quantum devices based on quantum dot systems in quantum information.     

Comparative study on transport properties of N-, P-, and As-doped SiC nanowires: Calculated based on first principles

According to the one-dimensional quantum state distribution, carrier scattering, and fixed range hopping model, the structural stability and electron transport properties of N-, P-, and As-doped SiC nanowires(N-SiCNWs, P-SiCNWs, and As-SiCNWs) are simulated by using the first principles calculations. The results show that the lattice structure of NSiCNWs is the most stable in the lattice structures of the above three kinds of doped SiCNWs. At room temperature,for unpassivated SiCNWs, the doping effect of P and As are better than that of N. After passivation, the conductivities of all doped SiCNWs increase by approximately two orders of magnitude. The N-SiCNW has the lowest conductivity. In addition, the N-, P-, As-doped SiCNWs before and after passivation have the same conductivity–temperature characteristics,that is, above room temperature, the conductivity values of the doped SiCNWs all increase with temperature increasing.These results contribute to the electronic application of nanodevices.     

Evaluation of Charged Defect Energy in Two-Dimensional Semiconductors for Nanoelectronics: The WLZ Extrapolation Method

Defects play a central role in controlling the electronic properties of two-dimensional (2D) materials and realizing the industrialization of 2D electronics. However, the evaluation of charged defects in 2D materials within first-principles calculation is very challenging and has triggered a recent development of the WLZ (Wang, Li, Zhang) extrapolation method. This method lays the foundation of the theoretical evaluation of energies of charged defects in 2D materials within the first-principles framework. Herein, the vital role of defects for advancing 2D electronics is discussed, followed by an introduction of the fundamentals of the WLZ extrapolation method. The ionization energies (IEs) obtained by this method for defects in various 2D semiconductors are then reviewed and summarized. Finally, the unique defect physics in 2D dimensions including the dielectric environment effects, defect ionization process, and carrier transport mechanism captured with the WLZ extrapolation method are presented. As an efficient and reasonable evaluation of charged defects in 2D materials for nanoelectronics and other emerging applications, this work can be of benefit to the community.     

Implementation of a separate fluid-neutral energy equation in SOLPS-ITER and its impact on the validity range of advanced fluid-neutral models

In plasma edge transport codes for nuclear fusion devices, fluid-neutral models offer an interesting alternative to the currently used kinetic Monte Carlo simulations, especially for cases of high ion-neutral collisionality. In this paper, we elaborate a separate neutral energy equation in the state-of-the-art SOLPS-ITER code suite, which previously assumed perfect ion-neutral temperature equilibration. Furthermore, we study the coupled plasma-neutral solutions for a range of divertor operating regimes, proving the validity of these fluid-neutral models for high-recycling and detached regimes.     

Metal ion capacitor composed of the thin-walled surfaces enabling high-rate performance and long cycling stability

Electrochemical capacitors (referred to as supercapacitors) have high power density, long cycling stability, and are eco-friendly for use in electronic applications. The proper and stable utilization of supercapacitor systems can expand the practical scope of energy-powering applications in various device platforms. Nevertheless, the low energy density of conventional oxide and sulfide electrode materials still limits the practical realization of supercapacitor devices in real electronic applications. This limitation results from the poor surface stability, structural collapse, and low electrical conductivity of the oxide and sulfide materials. Single metal electrodes with multivalent metal ions exhibit promising energy-storing kinetics and may be viable alternatives to these oxide and sulfide electrode materials. Here, we report a metal zinc (Zn) electrode supercapacitor (ZIC) consisting of a thin-walled architecture as an electrode by means of a voltage-controlled electroplating method. The optimized ZIC exhibited excellent pseudo-capacitive performance, excellent high-rate performance, and an outstanding cycling stability.     

HL-2A装置上边界间歇性事件与湍流粒子输运的统计学研究

通过对粒子概率分布函数的计算,发现在高等离子体密度下边界间歇性事件的爆发频率有所增加。通过条件平均的手段,正负间歇性事件得以区分,并发现了二者在空间上的不同特征。不同密度梯度下的湍流粒子输运计算表明,间歇性事件与湍流粒子输运之间存在密切联系,间歇性事件的存在能够大大增加湍流粒子输运的大小。在高等离子体密度时,间歇性事件的强度有所增加,而与之相应地,湍流粒子输运的大小也有所增强。     

利用可见-近红外-中红外超快光谱揭示离子交换法制备的少层MoS2中缺陷介导的载流子动力学

本文结合可见-近红外-中红外瞬态吸收光谱技术对离子交换法制备的少层MoS₂中缺陷介导的载流子动力学进行了详细的解析. 在近红外瞬态吸收光谱中观察到的宽带漂白信号表明少层MoS₂纳米片带隙中分布着大量的缺陷态. 实验结果明确揭示了载流子被缺陷态的快速捕获以及进一步的复合过程,证明带隙中的缺陷态对MoS₂光生载流子动力学过程起着至关重要的作用. 在中红外瞬态吸收光谱中观察到的正信号到负信号的转变进一步证实了在导带下小于0.24 eV处存在被载流子占据的缺陷态. 这些在少层MoS₂纳米片中存在的缺陷态可以作为有效的载流子捕获中心来辅助光生载流子在皮秒时间尺度内完成非辐射复合过程.