Temperature dependence of photoluminescence in amorphous Si1-xCx:H films

We have investigated the temperature dependence of photoluminescence in hydrogenated amorphous silicon-carbon alloys a-Si_1-xC_x:H prepared by glow discharge in the low-power regime. The radiative recombination process, due to photocarriers trapped on band-edge states, is in competition with the thermal escape of the photocarriers into the mobility bands. The model gives a quantitative fit with experiment, without any adjustable parameter, provided the width of the band-edge distribution of states is taken as the width of the conduction band only (measured by “photo-induced infra-red spectroscopy”) and not as the Urbach energy, as it is usually assumed.     

Prompt isothermal decay of thermoluminescence in MgB4O7:Dy,Na and LiB4O7:Cu,In dosimeters

According to standard delocalized kinetic models of thermoluminescence (TL), when an irradiated sample is held at a high temperature T, the isothermal TL signal will decay with a characteristic thermal decay constant λ which depends strongly on the temperature T. This prediction of standard delocalized kinetic theory is investigated in this paper by studying two TL dosimeters, MgB₄O₇:Dy, Na and LiB₄O₇:Cu, In (hereafter MBO and LBO correspondingly). In the case of LBO it was found that the thermal decay constant λ of the main dosimetric TL peak follows exactly the predictions of standard delocalized kinetic theory. Furthermore, the thermal activation energy of the main peak evaluated by the isothermal decay method is in full agreement with values obtained from initial rise and glow curve fitting methods. However, in the case of MBO it was found that the thermal decay constant λ varies little with the isothermal decay temperature T. In order to explain these unusual results for MBO, the TL glow curves and isothermal decay curves were analyzed using analytical expressions derived recently from a radiative tunneling recombination model. Based on the different behavior of the two TL dosimeters, it is suggested that the isothermal decay of TL at high temperatures can be used to discriminate between radiative delocalized recombination and radiative localized recombination processes.     

Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting

Solid‐state lighting (SSL) is now the most efficient source of high color quality white light ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light engine of SSL still have significant performance limitations. Foremost among these is the decrease in efficiency at high input current densities widely known as “efficiency droop.” Efficiency droop limits input power densities, contrary to the desire to produce more photons per unit LED chip area and to make SSL more affordable. Pending a solution to efficiency droop, an alternative device could be a blue laser diode (LD). LDs, operated in stimulated emission, can have high efficiencies at much higher input power densities than LEDs can. In this article, LEDs and LDs for future SSL are explored by comparing: their current state‐of‐the‐art input‐power‐density‐dependent power‐conversion efficiencies; potential improvements both in their peak power‐conversion efficiencies and in the input power densities at which those efficiencies peak; and their economics for practical SSL.     

Recombination and transfer annealing of neutron irradiated and 60Co(II)-doped Ba/CoEDTA/2

Abstract

Kinetics of post recoil isothermal annealing of crystalline Ba/CoEDTA/₂ irradiated in a nuclear reactor or doped by ⁶⁰Co(II) reveals a combination of a monotonous and an oscillatory part amounting 1-3% of the total. The permanent recombination has been found to consist of two first order processes leading to the octahedral structure of the six-co-ordinated ⁶⁰Co(III).     

Determination of trapping–detrapping events,recombination processes and gap-state parameters by modulated photocurrent measurements on amorphous silicon

Analysis of the out-of-phase modulated photocurrent (MPC) signal, the so-called Y signal, is proposed for determining the trapping–detrapping events, recombination processes and gap-state parameters in amorphous silicon. This is demonstrated by analysing experimental Y spectra obtained on this material from different laboratories including our own. Model simulations are also employed in which the amphoteric nature of the dangling bonds and their distribution according to the defect-pool model are taken into account. From the reconstruction of the Y signal, phase shift and MPC amplitude spectra, several contributions resolved from the frequency dependence of the experimental Y spectra are identified. Two electron trapping–detrapping processes are resolved. These are attributed to hydrogen-related positive defects and to transitions involving the D^+/0 level of the normal dangling bonds from the defect-pool distribution. At lower frequencies a residual contribution is resolved that is attributed to a term related to recombination through the D^+/0 and D^0/? levels. Between 300 and 150?K the above recombination contribution is essentially from the D^0/? and dominates the Y signal at lower frequencies. In this region a characteristic phase lead appears, which is attributed to the existence of safe hole traps in the valence band tail. Around 150?K, trapping–detrapping events in the conduction band tail dominate.     

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在自行设计与建造的液态锂铅合金鼓泡器实验系统上,开展了气-液接触法提取液态锂铅合金中的氢。实验结果表明,氦气比氩气更适合作填料塔的载带气;塔温越高,塔出口端氢含量越大;载气流速对出口端氢含量的影响呈锯齿状,无明显规律。实验结果虽然与文献数据有差别,但可以认为采用气-液接触法提取液态锂铅中的氢同位素是可行的,提取效率是随液态锂铅在填料塔中滞留的时间增长而增大的。     

高Z等离子体中的双电子复合与电子碰撞激发

 采用准相对论性Hartree-Fock-Relativistic方法与不可分辨跃迁组模型相结合,对Au和Ta元素的类Ni离子的双电子复合速率,以及Au元素类Cu离子的电子碰撞激发速率进行了计算。计算结果表明,对于Au类Ni离子的3d¹⁰-3d⁹4l5f-3d¹⁰4l双电子复合过程以及类Cu离子的3d¹⁰4l-3d⁹4l5f电子碰撞激发过程,当电子温度高于1.0 keV时,电子离子碰撞激发速率随电子温度增加而增加,双电子复合速率随电子温度增加而减小,并且电子碰撞激发对谱线辐射的贡献要比双电子复合大得多。     

Gd激光等离子体的双电子复合过程研究

在自旋-轨道劈裂阵模型下,通过类铜的内壳层激发组态计算了类镍Gd的双电子复合速率系数,其中考虑了共振和非共振辐射平衡跃迁对自电离能级的影响,而忽略了因碰撞跃迁引起的电子俘获,非共振辐射平衡跃迁在低电子温度条件下主要影响双电子复合过程;本文讨论了双电子复合系数及双电子伴线强度比随电子温度的变化.     

Heterogeneous Chemiluminescence of Crystal Phosphors on X‐Ray or UV Irradiation

Using a highvacuum assembly with molecular beams and setups with an implemented atom probe, we investigated atomic and molecular adsorption luminescence of the oxides CaOBi and MgO in O and O₂ beams and also radicalrecombination luminescence excited by H and O atoms in ZnS and in ZnS,CdS samples activated with silver, copper, and the rareearth element Tm. It is established that exposure to UV light and xray radiation of the CaOBi, MgO, and ZnSTm samples, where the mechanism of direct excitation of heterogeneous chemiluminescence (HCL) is realized, does not influence the characteristics of the heterogeneous chemiluminescence, whereas similar exposure of the ZnS,CdSCu,Al and ZnS,CdSAg samples and of selfactivated ZnS, in which the excitation of heterogeneous chemiluminescence is due to the ionization of the lattice, leads to an increase in the intensity of heterogeneous chemiluminescence up to five orders of magnitude. The mechanisms of the phenomenon are considered.     

Anisotropic emission of interface fluctuation quantum dots

We calculate energy levels, dipole moments and radiative broadening of interface fluctuation quantum dots. For optically allowed states, the dipole moment grows proportionally to the lateral quantum dot radius while the radiative broadening saturates towards the quantum well radiative broadening for large lateral quantum dot radii. This is accompanied by a change in the angular emission pattern, concentrating emission in forward and backward direction. Optically forbidden states do not couple to light propagating in the growth direction yet they may have a considerable radiative broadening due to spontaneous emission in other directions. Received 20 March 2002 Published online 25 June 2002