S波段相对论速调管振荡器研究

介绍利用20 GW加速器二极管产生的电子束源,开展S波段相对论速调管振荡器(RKO)的理论设计、粒子模拟和实验研究的情况.该RKO采用3个紧密耦合的圆柱腔作为振荡腔,束流经过一段漂移管的群聚后采用三轴输出腔提取微波.该振荡器具有起振时间快、结构紧凑、束波转换效率较高等优点.采用无箔空心阴极和0.9 T的恒流源磁场引出的电压1 MV、束流13kA、脉宽40 ns的环形电子束驱动RKO,单次运行输出了3.5 GW的辐射微波功率,效率27％,频率2.86 GHz,瞬时带宽2%;脉冲重复频率20 Hz运行时,输出 关键词： 相对论速调管 振荡器 三轴提取腔 高功率微波     

界面摩擦过程非连续能量耗散机理研究

结合无磨损界面摩擦微观能量耗散机理的复合振子模型,运用量子理论建立了微观能量耗散的量子力学模型.分析表明：在滑动过程中,当界面原子从一种平衡态跳跃至另一种平衡态时,摩擦功以离散形式耗散为界面原子热振子,且界面吸收能量的能力是离散的;高能态界面较低能态界面吸收能量的能力强,表现为易于吸收界面势能.界面原子吸收和释放能量的离散性在宏观上表现为摩擦功耗散的非连续性,为从微观角度解释无磨损界面摩擦状态周期性变化提供了理论基础. 关键词： 摩擦 非连续能量耗散 复合振子模型     

等离子体屏蔽效应对原子能级和振子强度的影响

利用Debye模型,研究了等离子体屏蔽效应对热等离子体中原子能级和振子强度的影响.通过在MCDF模型中引入等离子体屏蔽效应,计算了MnXXII-BrXXII等11个类Be离子在等离子体环境下2s²—［2s_1/2,2p_1/2］₁和2s²—［2s_1/2,2p_3/2］₁跃迁的能级和振子强度.计算结果表明,等离子体屏蔽效应使得类Be离子2s²—［2s_1/2,2p_1/2］₁跃迁的激发能量增大,从而导致谱线蓝移现象;并且随着屏蔽效应的不断增强,蓝移的程度会逐渐加大.屏蔽效应对于2s²—［2s_1/2,2p_3/2］₁跃迁的振子强度也有类似的影响. 关键词： Debye 等离子体屏蔽 跃迁能级 振子强度     

Theoretical investigation of a backward wave oscillator

From the linear Vlasov equation,the theoretical investigation on relativistic backward wave osciUator is performed.The relationship between the microwave power and the guiding magnetic field,which accords with the results of the particle simulation and experiments,is deduced.     

GaMnN材料红外光谱中洛伦兹振子模型的遗传算法研究

利用红外反射光谱研究了蓝宝石衬底上用金属有机物化学气相淀积方法生长的稀磁半导体GaMnN材料的晶格振动特性. 并成功地将改进的遗传算法应用于其红外反射光谱洛伦兹振子模型参数的提取. 通过与GaN薄膜的洛伦兹振子模型参数的对比研究发现,GaN掺入Mn后,ω_TO向高频方向移动,γ,ε_∞和ε_s均增加,而ω_LO基本保持不变. 文中同时分析和讨论了Mn对晶格振动特性的影响及 关键词： 稀磁半导体GaMnN材料 遗传算法 洛伦兹振子模型 参数提取     

Mid-infrared generation based on a periodically poled LiNbO3 optical parametric oscillator

We report a nanosecond Nd:YVO_4-pumped optical parametric oscillator (OPO) based on periodically poled LiNbO_3 (PPLN). Tuning is achieved in this experiment by varying the temperature and period of the PPLN. The design of double-pass singly resonant oscillator (DSRO) and confocal cavity enables the OPO threshold to be lowered considerably, resulting in a simple, compact, all-solid-state configuration with the mid-infrared idler powers of up to 466mW at 3.41μm.     

高离化态硫离子光谱的理论分析

 在考虑组态相互作用的基础上,利用包含相对论修正的Hartree-Fock(HFR)理论对S⁸⁺-S¹³⁺离子的谱线波长及加权振子强度等有关原子参数进行了系统计算,并与最新的实验观测和其它理论计算结果进行了比较。计算结果表明：S⁸⁺-S¹¹⁺的各个原子态在LS耦合下纯度很高,随着离化度的增大,S¹²⁺和S¹³⁺离子的部分原子态能级出现混合,组态相互作用逐渐增强。通过对实验结果的分析,识别出32条实验谱线,其中大多数谱线来自S⁸⁺-S¹³⁺离子的2s²2p^k-2s2p^k+1和2s2p^k+1-2s2p^k+2(k=0,1,2,3,4)之间的跃迁,理论计算结果与实验谱线波长之间的绝对误差大多数都在实验的有效分辨力以内。     

Performance of ring oscillators composed of gate-all-around FETs with varying numbers of nanowire channels using TCAD simulation

In this paper, we investigate the performance of ring oscillators composed of gate-all-around (GAA) silicon nanowire (NW) field-effect transistors (FETs) with four different numbers of NW channels, for sub-10-nm logic applications. Our simulations reveal that ring oscillators with double, triple, and quadruple NW channels exhibit improvements of up to 50%, 85%, and 97%, respectively, in the oscillation frequencies (f_osc), compared to a ring oscillator with a single NW channel, due to the large drive current, in spite of the increased intrinsic capacitance of a given device. Moreover, our work shows that the f_osc improvement ratio of the ring oscillators becomes saturated with triple NW channels with additional load capacitances of 0.1 fF and 0.01 fF, which are similar to, or less than the intrinsic device capacitance (∼0.1 fF). Thus, our study provides an insight for determining the capacitive load and optimal number of NW channels, for device development and circuit design of GAA NW FETs.     

Solvable model of quantum-optical feedback

A quantized optical cavity mode controlled by dissipation, two-photon source and feedback loop is studied. The feedback is activated by detections of photons leaving the cavity and consists of rapid phase shifts of the cavity field by π. The steady-state of the mode and first-order field correlation functions let analytical exploration. The feedback radically modifies the shape of the mode's spectrum - it gets asymmetry and its double-peaked structure manifests itself much more discernibly than in no-feedback case. Up to our knowledge, the present quantum feedback model is the first one which permits exact solution.     

The extended Hulburt–Hirschfelder‐long‐range oscillator model for direct‐potential‐fit analysis

In the present work, an extended Hulburt–Hirschfelder oscillator model is proposed as a means of simplifying potential energy functions for direct‐potential‐fit analyses. The new potential energy function is joined smoothly to the long‐range inverse‐power dispersion energy expression. The new model is employed in direct‐potential‐fits using spectroscopic line positions that involve the ground electronic states of the principal isotopologues of hydrogen iodide and carbon monoxide, and the ground and first singlet‐sigma excited states of hydrogen fluoride and hydrogen chloride. The present methodology is found to lead to compact, flexible, and robust representations for the potential energy that compare favorably with the results of past work where more complicated models were employed.