Mechanism of defect evolution in H+ and He+ implanted InP

The defect evolution in InP with the 75 keV H⁺ and 115 keV He⁺ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He⁺ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H⁺ implanted InP. After annealing, the H⁺ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H₂ molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence.     

Preparation of graphene on SiC by laser-accelerated pulsed ion beams

Laser-accelerated ion beams (LIBs) have been increasingly applied in the field of material irradiation in recent years due to the unique properties of ultra-short beam duration, extremely high beam current, etc. Here we explore an application of using laser-accelerated ion beams to prepare graphene. The pulsed LIBs produced a great instantaneous beam current and thermal effect on the SiC samples with a shooting frequency of 1 Hz. In the experiment, we controlled the deposition dose by adjusting the number of shootings and the irradiating current by adjusting the distance between the sample and the ion source. During annealing at 1100 ℃, we found that the 190 shots ion beams allowed more carbon atoms to self-assemble into graphene than the 10 shots case. By comparing with the controlled experiment based on ion beams from a traditional ion accelerator, we found that the laser-accelerated ion beams could cause greater damage in a very short time. Significant thermal effect was induced when the irradiation distance was reduced to less than 1 cm, which could make partial SiC self-annealing to prepare graphene dots directly. The special effects of LIBs indicate their vital role to change the structure of the irradiation sample.     

In-situ TEM observation of the evolution of helium bubbles in Mo during He+ irradiation and post-irradiation annealing

The evolution of helium bubbles in purity Mo was investigated by in-situ transmission electron microscopy (TEM) during 30 keV He⁺ irradiation (at 673 K and 1173 K) and post-irradiation annealing (after 30 keV He⁺ irradiation with the fluence of 5.74×10¹⁶ He⁺/cm² at 673 K). Both He⁺ irradiation and subsequently annealing induced the initiation, aggregation, and growth of helium bubbles. Temperature had a significant effect on the initiation and evolution of helium bubbles. The higher the irradiation temperature was, the larger the bubble size at the same irradiation fluence would be. At 1173 K irradiation, helium bubbles nucleated and grew preferentially at grain boundaries and showed super large size, which would induce the formation of microcracks. At the same time, the geometry of helium bubbles changed from sphericity to polyhedron. The polyhedral bubbles preferred to grow in the shape bounded by {100} planes. After statistical analysis of the characteristic parameters of helium bubbles, the functions between the average size, number density of helium bubbles, swelling rate and irradiation damage were obtained. Meanwhile, an empirical formula for calculating the size of helium bubbles during the annealing was also provided.     

钕敏化多层壳纳米结构的增强型染料敏化上转换发光

对于稀土离子掺杂的上转换发光,由于稀土离子吸收截面小、吸收范围窄,导致其发光强度受限.最近,在稀土上转换纳米粒子的表面连接近红外染料分子敏化发光,被证实是提高上转换发光强度的有效策略.然而,将染料分子连接经典的稀土Yb掺杂纳米粒子,并不能有效利用染料分子的敏化能力.针对这一问题,本文通过高温热分解法成功制备了Nd3+敏...     

基于电化学与热能的耦合关系演算聚合物锂离子动力电池的温度状态及分布

基于电化学-热耦合模型研究聚合物锂离子动力电池放电过程热行为, 分析了放电倍率、冷却条件对电池放电过程的温度变化及分布的影响规律. 结果表明: 3C放电时, 模型计算结果与实测结果的平均偏差为0.57 K, 方差为0.15, 说明模型准确度较高. 电芯的平均生热率在整个放电过程中呈现出增加的趋势, 初期和末期增长较快. 大倍率放电时, 与电流密度的平方呈正比的不可逆热所占的比重较大, 小倍率放电时, 电化学反应可逆热占主导. 改善冷却条件能降低电池放电过程的平均温度, 对流传热过程的表面传热系数为5 W/(m²·K), 1 C, 3 C, 5 C放电结束时, 电芯的平均温升为分别为6.46 K, 17.67 K, 27.53 K, 当对流传热过程的表面传热系数增加至25 W/(m²·K)时, 温升比自然对流条件下相同倍率放电时的温度分别降低了2.91 K, 4.68 K, 5.62 K, 但电芯温度分布的不一致性也会加剧. 关键词： 电化学 耦合 锂离子动力电池 温度分布     

Improved techniques for the calculation of ab initio ion-neutral interaction potentials: application to coinage metal ions interacting with rare gas atoms

Ab initio values for the potential energy functions for ion–neutral interactions can be tested by comparison with gaseous ion transport coefficients, but only if special care is taken to compute the interaction potentials accurately over wide ranges of internuclear separation. This is illustrated here by a reanalysis of the ab initio values for the coinage metal ions interacting with rare gas atoms, precise calculations of the transport cross sections over extremely wide ranges of energy, and similarly precise calculations of the zero-field ion mobilities as functions of gas temperature and the field-dependent ion mobilities at various fixed temperatures. The calculations indicate that the mobilities for Ag⁺(¹S) moving in Ne or Ar can distinguish between the existing, very similar ab initio potentials. They also show that substantial differences exist among the mobilities of the coinage metal anions and the ground and excited states of the cations. The techniques implemented are recommended for future ab initio calculations.     

Clustering of financial time series

This paper addresses the topic of classifying financial time series in a fuzzy framework proposing two fuzzy clustering models both based on GARCH models. In general clustering of financial time series, due to their peculiar features, needs the definition of suitable distance measures. At this aim, the first fuzzy clustering model exploits the autoregressive representation of GARCH models and employs, in the framework of a partitioning around medoids algorithm, the classical autoregressive metric. The second fuzzy clustering model, also based on partitioning around medoids algorithm, uses the Caiado distance, a Mahalanobis-like distance, based on estimated GARCH parameters and covariances that takes into account the information about the volatility structure of time series. In order to illustrate the merits of the proposed fuzzy approaches an application to the problem of classifying 29 time series of Euro exchange rates against international currencies is presented and discussed, also comparing the fuzzy models with their crisp version.     

Ionisation energy,electron affinity,and mass spectral decomposition mechanisms of RDX isomers upon electron attachment and electron ionisation

ABSTRACT

The structures, ionisation energies (IE), and electron affinities (EA) of 1,3,5-trinitro-1,3,5-triazacyclohexane (RDX) isomers upon loss and gain of an electron were calculated using density functional theory (DFT) methods. The adiabatic electron affinities (EA_ad) range from 1 to 2 eV. The vertical detachment energies are between 1.3 and 4.0 eV. The adiabatic ionisation energies (IE_ad) are in the 9.9–10.2 eV range. The vertical ionisation energies are in the 10.4–10.9 eV range. It is shown that NO₂^?/NO₂ loss would be common in anions and cations, respectively. Isomerisation and N—N bond dissociation accompany cation and anion formation, respectively. The suggested mass spectral fragmentation products for the cations along the S₀ surface are 84, 130, and 176 amu, in agreement with earlier mass spectrometry studies.     

The influence of implanted xenon on the sputtering yield of silicon

Following implantation labeling with either 200 or 270 keV Xe⁺ the sputtering yield of silicon bombarded with 20 keV Xe⁺ has been determined in situ by means of the backscattering technique (Y = 3.0 ± 0.3 (atoms/ion)). Yield enhancement by up to 60% was observed in cases where the implantation-induced xenon concentrations exceeded the saturation concentration during sputtering. The effect is attributed to (i) an increase in energy deposition at the surface introduced by pronounced xenon loading of the target and (ii) lowering of the surface binding energy. As a consequence the energy dependence of the xenon sputtering yield of silicon is expected to be strongly affected by the energy dependence of the xenon saturation concentration in silicon. Available experimental data support this idea.