低栅极电压控制下带有phenyltrimethoxysilane单分子自组装层的有机薄膜晶体管场效应特性研究

制作了底栅极顶接触有机薄膜晶体管器件,60 nm的pentacene被用作有源层,120 nm热生长的SiO₂作为栅极绝缘层.通过采用不同自组装修饰材料对器件的有源层与栅极绝缘层之间的界面进行修饰,如octadecyltrichlorosilane （OTS）,phenyltrimethoxysilane （PhTMS）,来比较界面修饰层对器件性能的影响.同时对带有PhTMS修饰层的OTFTs器件低栅极电压调制下的场效应行为及其载流子的传输机理进行研究.结果得到,当|V 关键词： 有机薄膜晶体管 自组装单分子层 场效应迁移率 低栅极调制电压     

核实验数据获取系统中的触发信号预处理

简要介绍了在核物理实验数据获取系统中,用FPGA芯片和VHDL语言实现对事件触发信号的预处理。阐述了在核物理实验数据获取系统中对事件触发信号的一般要求; 结合60Co伽马谱测量实验,介绍了基于一套自主研发的数据获取系统中触发信号的预处理,并给出了用VHDL语言实现该触发信号预处理的思想、仿真时序图和实验结果。该方法通过实验验证,证明切实可行,灵活性强。     

Multi-qubit controlled-NOT gates and Greenberger–Horne–Zeilinger state generation using one qubit simultaneously controlling n qubits

Based on superconducting flux qubits coupled to a superconducting resonator. We propose a scheme for implementing multi-qubit controlled-NOT (C-NOT) gates and Greenberger–Horne–Zeilinger (GHZ) state with one flux qubit simultaneously controlling on n qubits. It is shown that the resonator mode is initially in the vacuum state, a high fidelity for operation procedure can be obtained. In addition, the gate operation time is independent of the number of the qubits, and can be controlled by adjusting detuning and coupling strengths. We also analyze the experimental feasibility that the conditions of the large detuning can be achieved by adjusting frequencies of the resonator and pulses.     

Realization of quantum gates by Lyapunov control

We propose a Lyapunov control design to achieve specific (or a family of) unitary time-evolution operators, i.e., quantum gates in the Schrödinger picture by tracking control. Two examples are presented. In the first, we illustrate how to realize the Hadamard gate in a single-qubit system, while in the second, the controlled-NOT (CNOT) gate is implemented in two-qubit systems with the Ising and Heisenberg interactions. Furthermore, we demonstrate that the control can drive the time-evolution operator into the local equivalence class of the CNOT gate and the operator keeps in this class forever with the existence of Ising coupling.     

Complete Analysis of Four-Photon χ-Type Entangled State via Cross-Kerr Nonlinearity

We propose an efficient method to construct an optical four-photon |χ> state analyzer via the cross-Kerr nonlinearity combined with linear optical elements. In this protocol, two four-qubit parity-check gates and two controlled phase gates are employed. We show that all the 16 orthogonal four-qubit |χ> states can be completely discriminated with our apparatus. The scheme is feasible and realizable with current technology. It may have useful potential applications in quantum information processing which based on |χ> state.     

Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench

A lateral insulated gate bipolar transistor (LIGBT) based on silicon-on-insulator (SOI) structure is proposed and investigated. This device features a compound dielectric buried layer (CDBL) and an assistant-depletion trench (ADT). The CDBL is employed to introduce two high electric field peaks that optimize the electric field distributions and that, under the same breakdown voltage (BV) condition, allow the CDBL to acquire a drift region of shorter length and a smaller number of stored carriers. Reducing their numbers helps in fast-switching. Furthermore, the ADT contributes to the rapid extraction of the stored carriers from the drift region as well as the formation of an additional heat-flow channel. The simulation results show that the BV of the proposed LIGBT is increased by 113% compared with the conventional SOI LIGBT of the same length L_D. Contrastingly, the length of the drift region of the proposed device (11.2 μ) is about one third that of a traditional device (33 μ) with the same BV of 141 V. Therefore, the turn-off loss (E_OFF) of the CDBL SOI LIGBT is decreased by 88.7% compared with a conventional SOI LIGBT when the forward voltage drop (V_F) is 1.64 V. Moreover, the short-circuit failure time of the proposed device is 45% longer than that of the conventional SOI LIGBT. Therefor, the proposed CDBL SOI LIGBT exhibits a better V_F-E_OFF tradeoff and an improved short-circuit robustness.     

Impact of AlxGa1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs

Ferroelectric (FE) HfZrO/Al$_{2}$O$_{3}$ gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mobility transistors (MFSHEMTs) with varying Al$_{x}$Ga$_{1-x}$N barrier thickness and Al composition are investigated and compared by TCAD simulation with non-FE HfO$_{2}$/Al$_{2}$O$_{3}$ gate stack metal-insulator-semiconductor heterostructure high-electron mobility transistors (MISHEMTs). Results show that the decrease of the two-dimensional electron gas (2DEG) density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHEMTs due to the enhanced FE polarization switching efficiency. The electrical characteristics of MFSHEMTs, including transconductance, subthreshold swing, and on-state current, effectively improve with decreasing AlGaN thickness in MFSHEMTs. High Al composition in AlGaN barrier layers that are under 3-nm thickness plays a great role in enhancing the 2DEG density and FE polarization in MFSHEMTs, improving the transconductance and the on-state current. The subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs, affording favorable conditions for further enhancing the device.     

次谐波聚束系统固态放大器相位特性

 为研究BEPCⅡ直线加速器次谐波聚束系统使用的两台固态放大器（20 kW/142.8 MHz,10 kW/571.2 MHz）的相位特性,利用基于现场可编程门阵列(FPGA)的数字测量方法对两台固态放大器的脉内相移和相位稳定度进行了测量。测量系统硬件包括频率综合器、FPGA数字信号处理板和PC;软件部分包括FPGA内部算法、通信及PC端界面程序。该测量系统能真实地反映两台固态放大器的相位特性,为次谐波聚束器的相位补偿提供了参考。     

XOR gate response in a mesoscopic ring with embedded quantum dots

We address XOR gate response in a mesoscopic ring threaded by a magnetic flux . The ring, composed of identical quantum dots, is symmetrically attached to two semi-infinite one-dimensional metallic electrodes and two gate voltages, viz, V_a and V_b, are applied, respectively, in each arm of the ring which are treated as the two inputs of the XOR gate. The calculations are based on the tight-binding model and the Green’s function method, which numerically compute the conductance–energy and current–voltage characteristics as functions of the ring-electrodes coupling strengths, magnetic flux and gate voltages. Quite interestingly it is observed that, for =₀/2 (₀=ch/e, the elementary flux-quantum) a high output current (1) (in the logical sense) appears if one, and only one, of the inputs to the gate is high (1), while if both inputs are low (0) or both are high (1), a low output current (0) appears. It clearly demonstrates the XOR behavior and this aspect may be utilized in designing the electronic logic gate.     

以耦合量子点体系模块构造量子逻辑非门

我们使用处于居里温度附近的耦合量子点体系模块,并利用旋进磁场与其相互作用,构造一个二能级量子体系,使用驻波形式的电磁激励使其发生拉比振荡.由于该量子体系在统计力学上本质是一个纯粹系综,通过控制电磁激励作用时间的手段,我们可以实现一个输出信号易于被磁强计检测的量子逻辑非门.特别地,该量子逻辑门具备一定抗干扰性质.