Atomic and Electronic Structures of Traps in Silicon Oxide and Silicon Oxynitride

Silicon oxide (SiO₂) and silicon oxynitride (SiO_xN_y) are two key dielectrics used in silicon devices. The excellent interface properties of these dielectrics with silicon have enabled the tremendous advancement of metal-oxide-semiconductor (MOS) technology. However, these dielectrics are still found to have pronounced amount of localized states which act as electron or hole traps and lead to the performance and reliability degradations of the MOS integrated circuits. A better understanding of the nature of these states will help to understand the constraints and lifetime performance of the MOS devices. Recently, due to the available of ab initio quantum-mechanical calculations and some synchrotron radiation experiments, substantial progress has been achieved in understanding the atomic and electronic nature of the defects in these dielectrics. In this review, the properties, formation and removal mechanisms of various defects in silicon oxide and silicon oxynitride films will be critically discussed. Some remarks on the thermal ionization energies in connection with the optical ionization energies of electron and hole traps, as well as some of the unsolved issues in these materials will be highlighted.     

Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch

A low specific on-resistance (R S,on) silicon-on-insulator (SOI) trench MOSFET (metal-oxide-semiconductor-field-effect-transistor) with a reduced cell pitch is proposed.The lateral MOSFET features multiple trenches:two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX) (SOI MT MOSFET).Firstly,the oxide trenches increase the average electric field strength along the x direction due to lower permittivity of oxide compared with that of Si;secondly,the oxide trenches cause multiple-directional depletion,which improves the electric field distribution and enhances the reduced surface field (RESURF) effect in the SOI layer.Both of them result in a high breakdown voltage (BV).Thirdly,the oxide trenches cause the drift region to be folded in the vertical direction,leading to a shortened cell pitch and a reduced R S,on.Fourthly,the trench gate extended to the BOX further reduces R S,on,owing to the electron accumulation layer.The BV of the MT MOSFET increases from 309 V for a conventional SOI lateral double diffused metal-oxide semiconductor (LDMOS) to 632 V at the same half cell pitch of 21.5 μm,and R S,on decreases from 419 m · cm 2 to 36.6 m · cm 2.The proposed structure can also help to dramatically reduce the cell pitch at the same breakdown voltage.     

一种考虑IGBT基区载流子注入条件的物理模型

提出了一种考虑绝缘栅极双极晶体管(insulated gate bipolar transistor,IGBT) 基区载流子不同注入条件的物理模型. 在小注入和大注入情况下,分别建立描述IGBT基区载流子运动的输运方程(ambipolar transport equation,ATE),并确定边界条件. 采用傅里叶级数法求解载流子输运方程,并将计算结果分别与IGBT手册提供的实验数据和Hefner模型计算结果相比较,验证了本文提出物理模型的正确性. 关键词： 绝缘栅极双极晶体管 物理模型 注入条件 双极输运方程     

多光子偏振态与单光子高维空间态之间的相互变换及其应用

基于一种特殊的控制非门,实现多光子偏振态与单光子空间高维态之间的相互变换,使得对多光子偏振态的操作可以通过对单光子的操作来完成,由此可以实现任意多光子正定算符值测量和多光子任意幺正操作.这种实现方式是以一定概率完成的,但其效率要优于此前的方案,在目前的实验条件下是可行的. 关键词： 单光子空间态 特殊控制非门 线性光学多端口干涉仪     

Optical switching and logic gates with hybrid plasmonic-photonic crystal nanobeam cavities

We propose a hybrid resonance architecture in which a plasmonic element is coupled to a silicon-on-insulator photonic crystal nanobeam cavity operating at telecom wavelengths. It benefits from the combined characteristics of the photonic cavity and the plasmonic element, and exploits the unique properties of Fano resonances resulting from interactions between the continuum and the localized cavity states. As confirmed through 3D time-domain simulations, a strong cavity mode damping by the plasmonic element offers mechanisms of controlling a probe signal propagating in the nanobeam. It makes possible to create optical switching devices and logic gates relying on any optical nonlinear effect.     

Quantum computation with ions in microscopic traps

We discuss a possible experimental realization of fast quantum gates with high fidelity with ions confined in microscopic traps. The original proposal of this physical system for quantum computation comes from Cirac and Zoller (Nature 404, 579 (2000)). In this paper we analyse a sensitivity of the ion-trap quantum gate on various experimental parameters which was omitted in the original proposal. We address imprecision of laser pulses, impact of photon scattering, nonzero temperature effects and influence of laser intensity fluctuations on the total fidelity of the two-qubit phase gate.     

All-optical logic AND-NOR gate with three inputs based on cross-gain modulation in a semiconductor optical amplifier

We report the realization of a novel all-optical logic AND-NOR gate based on cross-gain modulation (XGM). The used scheme requires only one SOA to perform the logic gate with three input signals. A 8.5 dB dynamic extinction ratio with a switching time of about 650 ps for the rise time and 100 ps for the fall time.     

Injection moulding of thermoplastics. I. Freezing-off at gates

The injection moulding of thermoplastics involves, during mould filling, flow of a hot molten polymer into a mould network, the walls of which are so cold that the polymer freezes on them. During the constant pressure drop part of the filling stage, but not during the preceding constant flow-rate part, freezing-off, that is premature blockage of the mould network by frozen polymer, is possible. A semi-quantitative analysis of such freezing-off at a gate is presented here. The length-scales and time-scales of all the relevant physical processes occurring during freezing-off are identified and a criterion is obtained which enables the occurrence of freezing-off to be predicted, at least crudely. a _j constant - b _jk constant - Br Brinkman number - Br ₀ initial Brinkman number - Gz Graetz number - Gz ₀ initial Graetz number - h _c half-height of flat cavity - h _g half-height of flat gate - h _g ^* half-height of polymer melt region in flat gate - L _c length of cavity - L _f filled length - L _g length of gate - m viscosity shear-rate exponent - P pressure drop - Q volumetric flow-rate - r radial coordinate in round gate and cavity - R _c radius of round cavity - R _g radius of round gate - R _g ^* radius of polymer melt region in round gate - Sf Stefan number - t time - t _f freeze-off time - T temperature - T _i inlet polymer melt temperature - T _m melting temperature of polymer - T _w gate wall temperature - u _r radial velocity in round gate - u _x axial velocity in flat gate - u _y transverse velocity in flat gate - u _z axial velocity in round gate - w _c width of flat channel - w _g width of flat gate - x axial coordinate in flat gate and cavity - y transverse coordinate in flat gate and cavity - z axial coordinate in round gate and cavity - thermal conductivity of molten polymer - thermal conductivity of frozen polymer - heat capacity of molten polymer - heat capacity of frozen polymer - _h ratio of half-height of flat gate to that of flat cavity - _R ratio of radius of round gate to that of round cavity - _w ratio of width of flat gate to that of flat cavity - dimensionless axial coordinate in round gate and cavity - dimensionless transverse coordinate in flat gate and cavity - ^* dimensionless half-height of polymer melt region in flat gate - dimensionless temperature - _i dimensionless inlet temperature - _j j-th term in power series expansion of dimensionless temperature - thermal diffusivity ratio - dimensionless filled length - latent heat of fusion of polymer - µ viscosity - µ ₀ unit shear-rate viscosity - v _j j-th eigenvalue - j-th zero of zeroth-order Bessel function of first kind - dimensionless axial coordinate in flat gate and cavity - _c dimensionless pressure drop in cavity - _g dimensionless pressure drop in gate - density of molten polymer - density of frozen polymer - dimensionless radial coordinate in round gate and cavity - ^* dimensionless radius of polymer melt region in round gate - dimensionless time - _f dimensionless freeze-off time - ₀ dimensionless time at start of final phase of freezing-off - rescaled dimensionless time - rescaled dimensionless freeze-off time - rescaled dimensionless time at start of final phase of freezing-off - dimensionless similarity variable - dummy variable - scaled dimensionless axial coordinate in gate     

Coupling of Biomolecular Logic Gates with Electronic Transducers: From Single Enzyme Logic Gates to Sense/Act/Treat Chips

The integration of biomolecular logic principles with electronic transducers allows designing novel digital biosensors with direct electrical output, logically triggered drug‐release, and closed‐loop sense/act/treat systems. This opens new opportunities for advanced personalized medicine in the context of theranostics. In the present work, we will discuss selected examples of recent developments in the field of interfacing enzyme logic gates with electrodes and semiconductor field‐effect devices. Special attention is given to an enzyme OR/Reset logic gate based on a capacitive field‐effect electrolyte‐insulator‐semiconductor sensor modified with a multi‐enzyme membrane. Further examples are a digital adrenaline biosensor based on an AND logic gate with binary YES/NO output and an integrated closed‐loop sense/act/treat system comprising an amperometric glucose sensor, a hydrogel actuator, and an insulin (drug) sensor.