A Multiple Resonant Mode Film Bulk Acoustic Resonator Based on Silicon-on-Insulator Structures

With the rapid development of wireless technol- ogy, the demand for integrating multi-band devices has spurred substantial research interest. Research on CMOS compatible radio-frequency （rf） devices has also attracted significant attention. The resonant frequency of film bulk acoustic resonators （FBARs） is mainly determined by the thickness of the piezo- electric film, complicating the integration of differ- ent frequencies on a single chip. One report real- ized multiple resonant frequencies around 2.0 GHz by changing the quality of the electrode. Another re- port obtained the 2.5 GHz main frequency response with a quality factor （Q） of 101.8 and some spuri- ous resonances, while these spurious resonances were irregular.     

A Quasi-3D Threshold Voltage Model for Dual-Metal Quadruple-Gate MOSFETs

Due to challenges with relentless scaling of conventional bulk complementary metal-oxide- semiconductor （CMOS） devices, non-conventional CMOS devices have been of great interest to scale metaboxide-semiconductor field effect transistors （MOSFETs） to the 32nm gate length and below effectively. Among non-conventional CMOS devices, quadruple-gate （QG） MOSFETs have been gaining interest because they are sup- posed to provide excellent electrostatic controllability for ultra-large-scale integration （ULSI） applications. A number of attempts have been made to analyze QG MOSFETs analytically with a great amount of success. Sharma et al. have presented an an- alytical threshold voltage model for QG MOSFETs using an isomorphic polynomial function for solv- ing the 3D Poisson equation. Chiang has presented a number of models of scaling length,threshold voltage and subthreshold current for QG MOS- FETs adopting a concept of the so-called equivalent number of gates （ENGs）.     

标准CMOS工艺载流子注入型三端Si-LED的设计与研制

采用无锡华润上华(CSMC) 0.5 μm 标准CMOS工艺,设计并制备了一种新型的高发光功率载流子注入型三端Si-LED器件。该器件在p型衬底上进行n⁺掺杂,与p衬底形成两个相对的n⁺p结,其中一个结正向偏置,发出峰值波长在1 100 nm附近的红外光;另一个结同样正偏,作为注入结对发光进行调制。测试结果显示:第三端注入载流子明显增强了总体的发光功率,在10 mA偏置电流、3 V调制电压下,可获得1 nW的光功率,与单结相比提高了两个数量级。由于工作电压低,该器件可与目前主流的CMOS工艺共电源单芯片集成,在光电集成领域具有一定的应用前景。     

Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process

N and P-channel groove-gate MOSFETs based on a self-aligned CMOS process have been fabricated and characterized. For the devices with channel length of 140nm, the measured drain induced barrier lowering (DIBL) was 66mV/V for n-MOSFETs and 82mV/V for p-MOSFETs. The substrate current of a groove-gate n-MOSFET was 150 times less than that of a conventional planar n-MOSFET. These results demonstrate that groove-gate MOSFETs have excellent capabilities in suppressing short-channel effects. It is worth emphasizing that our groove-gate MOSFET devices are fabricated by using a simple process flow, with the potential of fabricating devices in the sub-100nm range.     

γ射线电离辐射对商用CMOS APS性能参数的影响

研究了γ射线电离辐射效应对商用CMOS有源像素传感器(APS)性能参数的影响,着重分析了量子效率、转换增益、暗电流、坏点和脉冲颗粒噪声等参数。研究结果表明:当受到1 000 Gy辐射后,APS失去工作能力,无信号输出或像素灰度值仅为0,110,255 DN。60Coγ射线的离位截面约为10-25cm2(0.1 b)。当剂量率低于58.3 Gy/h且辐照时间较短时,辐射对量子效率及转换增益无影响,坏点产生数为0,总剂量效应使3T-APS的本底噪声升高到4.62 DN但对4T PPD APS几乎无影响。脉冲颗粒噪声引起的各灰度值像素数量分布呈泊松分布,并与剂量率正相关。     

基于CMOS图像传感器的微型无人机遥感系统设计

为了实现微小型无人机航空遥感,设计了一种基于CMOS图像传感器的微小型无人机的可见光遥感系统.系统采用CMOS图像传感器替代CCD,利用时序发生模块(Field-Prog Rammble Array,FPRA)实现了控制时序、数据缓存和硬件彩色插值,C8051F单片机作为主控核心,采用FLASH作为数据存储单元,设计了PAL制视频信号生成电路.介绍了所用CMOS图像传感器的特性,分析了Bayer颜色格式进行彩色插值恢复标准RGB颜色格式的硬件实现与软件算法.整个系统重量约20 g,功耗约2 W.在一款翼展800 mm的无人机上实现了遥感拍照,给出了处理后的拍照结果.     

三值CMOS电流型反相器电路设计

本文依据开关-信号理论,讨论三值CMOS电流型反相器电路的设计.1 反相器的函数表达式在开关-信号理论中,信号变量与开关变量被区分.用α,β,γ表示开关变量,α,β,γ∈{T,F},T,F分别表示开关导通和截止的两种状态.对于开关变量有与、或、非等基本运算.用x,y,z,c表示信号量,其中c为常量,x,y,z∈{0,1,2}.对于信号变量有     

纳型卫星CMOS遥感相机及其实验研究

为了满足纳型卫星遥感系统的要求,设计了基于互补型金属氧化物半导体CMOS(complementarymetalox idesemiconductor)图像传感器的遥感相机。通过热平衡实验,得到了CMOS相机平均暗输出和暗不一致性随温度的变化曲线。它适于在15～50℃的温度环境中工作,并可经受-25～60℃卫星舱内的温度变化的考验。光度标定实验表明:该相机的数字输出线性度好,可用于获取所需要的图像。     

三值 BiCMOS电路

本文在分析二值 BiCMOS 电路及“开关信号理论”的基础上, 用开关级设计方法提出了新的三值 BiCMOS 电路. 与 CMOS 三值电路相比,新的电路的驱动能力明显要强得多, 因而在大电容负载条件下有更 好的速度性能.