Lattice Compatibility Theory LCT investigations on physical and optical constants of antimony processed antimonite nano-films

Antimonite (Sb₂S₃) thin films have been synthesized through an annealing process in sulfur vapors at 300 °C of Sb thermal evaporated films. Deposited films have been characterized by X-ray diffraction, scanning electron microscopy and UV–vis–NIR spectroscopy. X-ray diagrams of these films have confirms that they were well crystallized in orthorhombic structure and some parameters such as the lattice parameter, crystallite size, microstrain and degree of preferred orientation have been reported and correlated with the effect of crystallite size. Optical properties of Sb₂S₃ films have been characterized by solid-state UV–visible absorption spectroscopy, and the band gap E_g was between 1.75 and 2.23 eV. Moreover, additional opto-thermal investigation and analyses within the framework of the Lattice Compatibility Theory provided plausible explanation for thickness-dependent incorporation of sulfur element inside antimony elaborated matrices.     

Properties of sol-gel dip-coated zinc oxide thin films

Zinc oxide (ZnO) films were deposited on glass substrates by the sol-gel dip coating method using acrylamide route. The films were characterized by X-ray diffraction studies which indicated wurtzite structure. Optical absorption measurements indicated band gap in the range 3.17-3.32 eV. XPS studies indicated the formation of ZnO. The resistivity of the films were in the range 1000-10,000 ohm cm.     

环形线负载驱动变曲率反射镜技术

从薄板弹性理论出发,对可实现曲率变化的环形线负载驱动模型进行分析,给出了基于该模型的大镜厚比变曲率反射镜的形变方程.以较小的驱动力实现较大的中心形变为目标,利用MATLAB软件对不同反射镜厚度、驱动环半径下的反射镜形变情况进行模拟计算,结果表明,反射镜厚度范围在2~4 mm之间、驱动环半径数值在反射镜有效半径1/2处最佳.以此为依据,设计并研制了口径为100 mm、厚度为3 mm的铍青铜环形线负载驱动变曲率反射镜结构及原型样片,给出了变曲率反射镜整体结构前10阶的振动模态分析结果.完成装配后,反射镜原型样片的面形精度接近λ/30(λ为波长).对该结构进行极限曲率变化和面形精度保持的验证实验,通过对变曲率反射镜结构进行改进,环形线负载驱动能够实现超过30个波长(632.8 nm)的中心形变,且面形精度的变化与反射镜中心矢高的变化呈弱相关.     

Residual stress/strain analysis in thin films by X-ray diffraction

Residual stresses are found in the majority of multilayer thin film structures used in modem technology. The measurement and modeling of such stress fields and the elucidation of their effects on structural reliability and device operation have been a “growth area” in the literature, with contributions from authors in various scientific and engineering disciplines.

In this article the measurement of the residual stresses in thin film structures with X-ray diffraction techniques is reviewed and the interpretation of such data and their relationship to mechanical reliability concerns are discussed.     

偶氮基染料掺杂薄膜的双光子图象存储

研究了偶氮基染料掺杂薄膜ＭＯ－ＰＶＡ和ＥＯ－ＰＶＡ的双光子存储特性。在对薄膜用Ａｒ＾＋激光作预激发下实现了Ｈｅ－Ｎｅ激光的红光存储。获得了实时和短时存储照片。光电记录存储曲线，分析了双光四能级系统的存储机制。实现确定了最佳预激发功率约为０．２８Ｗ／ｃｍ＾２，最小Ｈｅ－Ｎｅ光可存储功率密度低于０．２Ｗ／ｃｍ＾２。     

Nd:YAG laser synthesis of nanostructural V2O5 from vanadium oxide sols: Morphological and structural characterizations

Vanadium oxide thin films were prepared by sol-gel method, then subjected to Nd:YAG laser (CW, 1064 nm) radiation. The characteristics of the films were changed by varying the intensity of the laser radiation. The nanocrystalline films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). XRD revealed that above 102 W/cm² the original xerogel structure disappears and above 129 W/cm² the films become totally polycrystalline with an orthorhombic structure. From TEM observations, we can see that due to laser radiation, the originally fibrillar-like particles disappear and irregular shaped, layer structured V₂O₅ particles are created. From XPS spectra we can conclude that due to laser radiation the O/V ratio increased with higher intensities.     

Tracer studies of anodic films formed on aluminium in malonic and oxalic acids

Using a tungsten-containing layer, incorporated into sputtering-deposited aluminium, as a tracer, the growth of porous anodic films in malonic and oxalic acid electrolytes has been investigated using transmission electron microscopy, Rutherford backscattering spectroscopy and nuclear reaction analysis. Comparisons were also made with films formed in phosphoric acid electrolyte, which have been studied previously. The findings reveal a distortion of the tracer layer within the barrier region of the porous films, evident as a lagging of the tracer beneath the pores relative to that in the adjacent cell wall region. Further, the films are significantly thicker than the layer of metal consumed during anodizing and display smooth-sided pores. The anodizing behaviours are consistent with a major role for field-assisted flow of film material within the barrier layer in the development of the pores.     

Optimization of facet coating for highly strained InGaAs quantum well lasers operating at 1200 nm

The optical output power of a laser diode can be enhanced by anti-reflection (AR) and high-reflection (HR) facet coatings, respectively, at the front and back facet. AR and HR coatings also serve the purpose of protection and passivation of laser diode facets. In this work, we have designed and optimized a single layer λ/4 thick Al₂O₃ film for the AR coating and a stack of λ/4 thick Al₂O₃/λ/4 thick Si bi-layers for the HR coating for highly strained InGaAs quantum-well edge emitting broad area (BA) laser diodes. Effect of the front and back facet reflectivities on output power of the laser diodes has been studied. The light output versus injected current (L–I characteristics) measurements were carried out on selected devices before and after the facet coatings. We have also carried out the numerical simulation and analysis of L–I characteristics for this particular diode structure. The experimental results have been compared and verified with the numerical simulation.     

相变域硅薄膜材料的光稳定性

采用RF-PECVD技术，通过改变反应气体的硅烷浓度制备了一系列不同晶化率不掺杂的硅薄膜材料，研究了工艺变化对材料结构的影响及材料光电特性同微结构的关系.随后进行了光衰退试验，在分析光照前后光电特性变化规律的基础上，认为材料中的非晶成分是导致材料光电特性衰退的主要原因.在靠近过渡区非晶一侧的硅材料比普通非晶硅稳定，衰退率较少；高晶化率微晶硅材料性能稳定，基本不存在光衰退；在靠近过渡区微晶一侧的硅材料虽然不是完全不衰退，但相比高晶化率硅材料来说更适合制备高效微晶硅电池. 关键词： 射频等离子体增强化学气相沉积 硅薄膜 Staebler-Wronski(SW)效应 稳定性     

TiO2纳米晶的等离子体改性及光电转换性能的研究

用反应射频溅射法和涂敷法在导电玻璃上制备TiO2薄膜，并用Ar射频等离子体对TiO2薄膜进行处理。按“三明治”结构将TiO2工作电极、Pt／C对电极、0．5MKI 0．05M I2电解液组装成光电池，测量其开路电压和短路电流。结果表明经过Ar射频等离子处理后，溅射法和涂敷法制备的TiO2薄膜组装的光电池的光电流分别提高了约80％和60％。