电子束蒸发在不同Ar气氛下外退火制备MgB2超导薄膜

制备高质量的MgB2薄膜是实现MgB2超导电子器件应用的前提和基础.我们用电子束蒸发B膜和Mg/B多层膜为前驱然后后退火的方法,分别在高温区(~900℃)和中温区(~750℃)成功获得了MgB2超导薄膜.改变退火的Ar气压条件,采用B膜前驱退火的样品Tc可达到38K以上,转变宽度0.3K.Mg/B多层膜的结果尽管Tc稍低(Tc~35K),但薄膜表面更加均匀,且避免了高温下Mg蒸汽污染的问题.对于两种前驱退火中观察到的完全不同的退火气压影响,我们认为是与其各自的超导成相过程相联系的,在此基础上我们对退火气压效应给出了自己的分析和解释,为今后进一步细致研究退火过程中的薄膜生长机制提供了参考.     

ZnSe/SiO2复合薄膜光学常数与荧光光谱的研究

采用溶胶-凝胶工艺与原位生长技术，制备了ZnSe/SiO₂复合薄膜.X射线衍射分 析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1 ∶1.01—1∶1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌，结果表明复合薄 膜表面既存在尺寸约为400nm的ZnSe晶粒，也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测 量了薄膜椭偏角Ψ，Δ与波长λ的关系，采用Maxwell-Garnett有效介质理论对薄膜的光学 常数、厚度、气孔率、ZnS 关键词： 2复合薄膜')" href="#">ZnSe/SiO₂复合薄膜 光学性质 椭偏光度法 荧光光谱     

稀掺杂GaNxAs1－x(x≤0.03)薄膜的调制光谱研究

利用室温下压电调制反射光(PzR)谱技术系统测量了N掺杂浓度为0.0%—3%的分子束外延生长GaN_xAs_1-x薄膜，并对图谱中所观察的光学跃迁进行了指认.在GaN_0.005As_0.995和GaN_0.01As_0.99薄膜的PzR谱中观察到此前只在椭圆偏振谱中才看到的N掺杂相关能态E₁+Δ₁+Δ_N.当N掺杂浓度达到 关键词： 压电调制反射光谱(PzR) xAs_1-x薄膜')" href="#">GaN_xAs_1-x薄膜 分子束外延(MBE)     

Nonlinear optical characterization of cluster dynamic in water in oil microemulsion by a pump probe laser beam technique

We present a new pump probe laser beams configuration for the nonlinear optical characterization of microemulsions. We detect the variation of the on-axis optical intensity of the probe beam as generated by the concentration profile induced in an optically thin film of microemulsion by the pump beam. A mathematical model has been introduced to describe the phenomenon. The technique allows the determination of both Kerr-like optical nonlinearity and time constants and, therefore, it gives information both on cluster dimension and their shape. We discuss its application to WAD (water/AOT/decane, where AOT denotes sodium-bis-di-ethyl-sulfosuccinate) with the application of a strong electric field of optical source. Comparison between theoretical predictions and experimental results confirms the presence of giant optical nonlinearity in the absence of turbidity divergence. Chainlike shape of clusters, of the kind already reported with the application of strong electric field, could justify this result. Received 26 October 2002 RID="a" ID="a"e-mail: vicari@na.infn.it     

Atomic Vibrational Dynamics of Thin Films Studied by Nuclear Resonant Inelastic X-Ray Scattering: Amorphous Tb1−x Fe x Alloys

Hyperfine Interactions - Nuclear resonant inelastic X-ray scattering (NRIXS) of 14.4125 keV synchrotron radiation was used to measure directly the partial vibrational density of states (VDOS),...     

Generation of 3rd and 5th harmonics in a thin superconducting film by temperature oscillations and isothermal nonlinear current response

The generation of harmonics of the voltage response is considered when an AC current is applied through a superconducting film above T_c. It is shown that almost at all temperatures the mechanism of the temperature oscillations created by the AC current and the temperature dependence of the resistance dominates over the isothermal nonlinear electric conductivity. Only in a narrow critical region close to T_c the latter is essential for the generation of the harmonics. A detailed investigation of harmonics generation provides an accurate method for measuring the thermal boundary conductance between the film and the insulating substrate. The critical behaviour of the third harmonic will give a new method for the determination of the lifetime of metastable Cooper pairs above T_c. The comparison of the calculated fifth harmonics of the voltage with the experiment is proposed as an important test for the applicability of the employed theoretical models. Received 8 September 2001     

Phase Conjugation in Saturable Absorbing Dye Films by Degenerate Four-Wave Mixing and Holographic Processes Using Nanosecond Pulse and CW Lasers

We report on the simultaneous generation of phase-conjugate signals by degenerate four-wave mixing (DFWM) and holographic processes using a nanosecond pulse and a CW lasers in polyvinyl alcohol (PVA) films doped with four kinds of saturable absorbing dyes. For the pulse laser, of the four kinds of dye-doped PVA films, the erythrosine B-doped PVA and uranine doped-PVA films generate PC signals only by the DFWM process, while the other dye-doped PVA films generate PC signals simultaneously by not only the DFWM process but also the holographic process. Especially, the safranin T-doped PVA film generates strong PC signals by the holographic process. In contrast, all of the dye-doped PVA films generate the two types of PC signals for the CW laser. The fading of dye molecules is found to result in the generation of the holographic component of PC signals which governs the temporal behavior of the total PC signals.     

Laser diagnostics of nanoscale dielectric films on absorbing substrate by differential reflectivity and ellipsometry

The differential reflection characteristics for ultrathin inhomogeneous dielectric film on absorbing substrate are investigated in the long-wavelength approximation. The obtained first-order expressions for differential reflectivity and changes in the ellipsometric angles caused by ultrathin layer are of immediate interest to the solution of the inverse problem. The method to determine the averaged values (not the realistic profile) of refractive index for inhomogeneous nanometric films are shown. The novel possibilities for determining the dielectric constant and thickness of nanoscale homogeneous films by the differential ellipsometric and reflectivity measurements are developed, and a simple method to estimate whether the nanometric film is homogeneous or not is also discussed.     

Effect of AgNO3 additive/doping on microstructure and superconductivity of the Pb doped Hg: 1223 thin film prepared through spray pyrolysis

We report successful fabrication of Ag doped Hg:1223 films by reacting Ba₂Ca_2.3Cu_3.3O_z(Ag_y): y=0, 0.02, 0.025, 0.05, 0.1 and 0.2 precursors deposited by spray pyrolysis on SrTiO₃ (100) substrates, in controlled Hg+Pb ambient, in an evacuated sealed quartz tube at 820 °C for 4 h. The effects of AgNO₃ addition on the superconducting properties of Hg/(Pb):1223 films are studied. The addition of low concentration of silver e.g. y≈0.025 results in a slight increase in T_c (R=0) from 125 to 126 K and the dc critical current density (J_c) decreases with the increasing Ag in Hg(Pb):1223 (Ag_y) films. The microstructural details exhibit the curious characteristics of spiral like features for lower concentrations of silver i.e. up to y=0.05. These improvements are believed to be due to the liberation of oxygen through the dissociation of AgNO₃ at higher temperature and passivation of weak link effects through the segregation of silver at these grain boundaries. The addition of silver content y≥0.05 resulted in the decrease in transition temperature. The J_c is observed to decrease steadily with increasing Ag content. The microstructural features, e.g. spiral are also found to deteriorate with increasing silver content. The deterioration in superconducting properties at high Ag content is believed to be mainly due to the formation of Ag-Hg amalgam.     

Electrical and optical properties of GexFexSe100−2x chalcogenide thin films

Optical absorption at room temperature and electrical conductivity at temperatures between 283 and 333 K of vacuum evaporated Ge_xFe_xSe_100−2x (0≤x≤15) amorphous thin films have been studied as a function of composition and film thickness. It was found that the optical absorption is due to indirect transition and the energy gap increases with increasing both Ge and Fe content; on the other hand, the width of the band tail exhibits the opposite behavior. The optical band gap E_opt was found to be almost thickness independent. The electrical conductivity show two types of conduction, at higher temperature the conduction is due to extended states, while the conduction at low temperature is due to variable range hopping in the localized states near Fermi level. Increasing Ge and Fe contents were found to decrease the localized state density N(E_F), electrical conductivity and increase the activation energy for conduction, which is nearly thickness independent. Variation of the atomic densities ρ, molar volume V, glass transition temperature T_g cohesive energy C.E and number of constraints N_Co with average coordination number Z was investigated. The relationship between the optical gap and chemical composition is discussed in terms of the cohesive energy C.E, average heat of atomization and coordination numbers.