Improvement in magnetic properties of La substituted BaFe12O19 particles prepared with an unusually low Fe/Ba molar ratio

In this study, effect of lanthanum substitution on the phase composition, lattice parameters and magnetic properties of barium hexaferrite has been studied in samples synthesized in ammonium nitrate melt. Samples, prepared with different lanthanum amount and having various initial Fe/(Ba+La) ratios in between 12 and 2 {(Ba_1−xLa_x)·n Fe₂O₃, where 0≤x≤1 and 1≤n≤6)}, are sintered at temperatures from 800 to 1200 °C. The lattice parameters, both a and c, decreases with increasing La amount which results in a decrease of the unit cell volume. The scanning electron microscope micrographs show that the pure and La-substituted sample with x=0.3, both calcinated at 1000 °C, have grain sizes smaller than 1 μm. The coercivities of the La-substituted samples increase with increasing La amount and reaches to a maximum value of 5.73 kOe, when x=0.3. Sintering at higher temperatures (above 1000 °C) decreases the coercivity, resembling a transition from single to multi-domain behavior of the particles, while saturation magnetization of the samples continues to increase due to the increasing grain size. Magnetization measurements of the samples prepared with different Fe/(Ba+La) molar ratios, n's, revealed that the specific saturation magnetization slightly increases with decreasing n, while coercivities fluctuates around 5.5 kOe. However, a sharp increase in the saturation magnetization has been observed in the sample having n=1 and washed in HCl. It was measured as 59.2 emu/g at 15 kOe, which is higher than that of the pure sample (57.5 emu/g). Thus, the magnetic parameters are optimized in the sample Ba_0.7La_0.3Fe₁₂O₁₉ so as to maximize both coercivity and specific saturation magnetization in the HCl-washed sample synthesized by starting with an unusually low Fe/(Ba+La) molar ratio of 2 (or n=1).     

类铍离子内壳激发态1s2p3 3P0、3D0及2s2p3 3D0 的俄歇宽度和俄歇分支率

采用鞍点变分方法和鞍点复数转动方法并考虑相对论修正和质量极化效应,计算了类铍离子内壳激发态1s2p3 3P0、3D0和内壳双激发态2s2p3 3D0的俄歇宽度、俄歇分支率和俄歇电子能量.同时还对1s22p2 3Pe态到1s2p3 3P0、3D0态(Z=4~10)的振子强度和辐射跃迁率进行了计算,计算结果与其他理论结果以及实验数据符合得很好.     

基于半导体光放大器的干涉型器件中噪声特性的分析

分析了基于半导体光放大器(SOA)的干涉仪分别处于“开”、“关”两种工作状态时的输出信噪比及噪声指数,发现当干涉仪处于“开”态时输出信噪比有所恶化,并导出了附加噪声因子的表达式。实验结果进一步证明了理论分析的正确性。     

基于银行下侧风险规避的第三方B2B平台激励策略研究

以电子仓单融资为例, 基于银行下侧风险规避角度, 研究联合授信和委托授信下当第三方B2B平台存在行为隐匿的道德风险时, 银行对B2B平台的激励策略设计问题。研究发现:B2B平台的最优努力水平随收益分配比例、回购比例的增大而减小, 随质押率、贷款利率、产品采购量、损失补偿比例的增大而增大;同时银行为规避违约风险, 需设置质押率、贷款利率和贷款额上限及回购比例下限, 并且银行最优收益分配比例与损失补偿比例、最优损失补偿比例与贷款损失率均成正相关关系。此外, 随着B2B平台工作效率的提高, 联合授信下最优收益分配比例将减小, 最优损失补偿比例将增大, 最终近似于委托授信下的最优损失补偿比例。最后给出数值分析。     

Effects of pulsed bias duty ratio on microstructure and mechanical properties of TiN/TiAlN multilayer coatings

TiN/TiAlN multilayer coatings were deposited on M2 high speed steel by a pulsed bias arc ion plating system. The effect of pulsed bias duty ratio on the microstructure, mechanical and wear properties was investigated. The amount of macroparticles reduced with the increase of the duty ratio. The surface roughness was 0.0858 μm at duty ratio of 50%. TiN/TiAlN multilayer coatings were crystallized with orientations in the (1 1 1), (2 0 0) (2 2 2) and (3 1 1) crystallographic planes and the microstructure strengthened at (1 1 1) preferred orientation. At duty ratio of 20%, the hardness of TiN/TiAlN multilayer coatings reached a maximum of 3004 HV, which was 3.2 times that of the substrate. The adhesion strength reached a maximum of 77 N at 50% duty ratio. Friction and wear analyses were carried out by pin-on-disc tester at room temperature. Compared with the substrate, all the specimens coated with TiN/TiAlN multilayer coatings exhibited better tribological properties.     

保偏光纤偏振器

利用保偏光纤的弯曲损耗特性绕制而成的光纤偏振器已有过报道。但文献[1]中报道的偏振器尺寸太大(φ=100mm),不利于光纤陀螺的小型化。本文介绍一种采用“熊猫”型光纤制成的偏振器,其尺寸较小(φ=30mm),消光比可达到33dB。     

自适应光学系统对实际大气湍流波前的时域校正效果

引入时域校正因子（系统团环校正波前残余误差与系统开环时的湍流波前扰动误差之比）和系统测量信噪比,分析了自适应光学系统对实际大气湍流扰动的时域校正效果与湍流功率指数、湍流功率谱转折频率、系统测量信噪比、系统时间延迟以及系统闭环带宽的关系,并给出了系统的最佳闭环带宽。此外还分析了弱光61单元自适应学系统的时域校正效果。     

在MOCVD外延生长中Ⅴ/Ⅲ比对AlxGa1-xAs外延层中A1组分分布的影响

本实验首次观察到用MOCVD方法在GaAs基片上外延生长AlxGa1-xAs/GaAs薄膜结构时,生长中所用的Ⅴ/Ⅲ比对外延层中Al组份x的分布的影响.当Ⅴ/Ⅲ比较低时,外延层中的Al组份出现很明显的层状阶梯形三层分布:靠近基片的一层中x值较低,而在外延层的表面层中x值较高.随着生长中所用的Ⅴ/Ⅲ比增加时,Al组份的分布趋于均匀.利用GaAs的高温热分解和Ga、As离子在晶体中的热扩散及其对外延生长的影响,对这一现象作了初步解释.     

^143Pm高自旋态研究

通过熔合蒸发反应^129Te(^19F,4nγ）布居了^143Pm的高自旋态,利用在束γ谱学方法,对^143Pm的高自旋态核结构进行了研究,测量了γ射线单谱和γ－γ符合谱,并进行了γ射线各向异性以及DCO比率分析,建立了激发高能达10535．4keV的能级纲图,其中包括新发现的32条γ射线和17个新能级,用弱耦合模型对^143Pm的晕态能级结构进行了解释。