Composition of Ta2O5 stacked films on N2O- and NH3-nitrided Si

The composition and microstructure of rf sputtered 20 nm Ta₂O₅ on N₂O or NH₃ Rapid Thermal Nitrided (RTN) Si substrates have been investigated by X-ray photoelectron spectroscopy. RTN at 800 and 850 °C is effective to suppress active oxidation of Si. There is no evidence for the presence of SiO₂ at Si interface. A lightly nitrided surface is established in both cases without a formation of detectable oxynitride layer at Si. A layered nature of the films is observed, with stoichiometric tantalum pentoxide at and close to the films’ surface. In the depth, the films are mixed ones whose composition depends on the nitridation ambient. N₂O treatment stimulates oxidation processes during the film deposition while NH₃ nitridation results to a less effective oxidation and produces Ta-silicate like film. The correlation between the composition of the interfacial regions and the nitridation gas is also discussed. The results suggest that hydrogen, as a component of nitridation ambient, plays significant role in the reactions controlling the exact composition of the deposited Ta₂O₅, activating reactions with nitrogen. Nitrogen related reactions likely occur with NH₃ processing but do not with N₂O one. The presence of nitrogen feature is not detected in N₂O-samples spectra at all. In the integration perspective, preliminary RTN of Si in N₂O or NH₃ could be a suitable way to produce layered Ta₂O₅-based films with more or less presence of tantalum silicate with a trace of nitrogen, either only at the interface with Si (N₂O-process) or in the whole film (NH₃-process).     

Scattering of electrons from gas-phase N2O(1Σ): Computed cross-sections and angular distributions in comparison with experiments

Ab initio calculations are reported for the quantum scattering of electrons from N₂O molecules in the gas phase and for energies which range from near threshold up to about 100 eV. Elastic integral cross-sections and angular distributions are examined in detail and an extensive comparison is made with existing experiments. The agreement found with the latter data is fairly good and results are further discussed to explain the physical mechanisms at work for this polar target.     

Effective non-empirical absorption potentials based on quasifree-scattering model

Several recently proposed modifications and improvements of the quasifree-scattering model for absorption potentials have been tested and compared. The possibility of obtaining energy-dependent polarization potentials from these absorption potentials by the dispersion relation is investigated. Numerical calculations for the elastic scattering of electrons by neon atoms at impact energies 20–3000 eV are performed and the results are compared with experimental data.     

Focusing characteristics of optical fiber axicon microlens for near-field spectroscopy: Dependence of tip apex angle

We fabricated axicon microlenses on a single-mode bare optical fiber by using selective chemical etching technique. By varying the concentration and mixture ratios of etching solutions, we could make axicon microlenses with different apex angles (118°, 107° and 90°). We measured the illumination and collection efficiency of these microlenses by both objective-lens imaging and near-field photoluminescence (PL) spectroscopy of semiconductor quantum dots with respect to the distance between the sample and the axicon lens probe. We found that axicons with 118° and 107° [90°] apex angle tend to exhibit the laser focusing spot sizes of about 406 and 478 nm [382 nm] and maintain the high [slightly low] collection PL intensity with the distance between the sample and the axicon probe.     

Studies on vibrational excitation differential cross-sections of low-energy electron scattering from N2 molecule

The vibrational excitation differential cross-sections (DCS) of low-energy electron-N₂ scattering are studied using vibrational close-coupling (VCC) method and vibrational scattering potentials which include static, exchange and polarization contributions. By including the contributions of 18 partial waves, 20 vibrational states, and 16 molecular symmetries (up to Λ=7), the converged vibrational excitation (0↦2, 0↦3, 0↦4) DCS agree well with experimental results. Also obtained are converged vibrational (1↦0, 1↦1, 1↦2, 1↦3) DCS, with the impact energies being those of the main resonant peaks (1.92 eV, 1.90 eV, 1.62 eV, 1.63 eV).     

Ultraviolet and visible Raman spectroscopy characterization of diamond–like carbon film growth by pulsed laser deposition

Laser-induced removal of flash from heat sinks in integrated circuit (IC) packages has been studied. It is found that flash can be effectively removed from heat sinks in plastic IC packages by laser deflashing. An optical microscope, an α-step surface profiler and X-ray photoelectron spectroscopy are used to analyze the deflashing efficiency. Laser deflashing of IC packages is based on laser ablation of flash materials. With an increase of laser fluence, the ablation rate increases. The laser fluence is selected between the ablation threshold of flash materials and that of heat-sink materials. An acoustic wave is generated by laser ablation of flash materials. Acoustic wave detection is used to monitor the surface cleanness during laser deflashing and to determine the ablation threshold of flash materials. Received: 18 April 2001 / Accepted: 14 September 2001 / Published online: 17 October 2001     

Image-potential states on stepped Cu (001) surfaces

Image-potential states on Cu (117) and Cu (119) surfaces were studied by means of two-photon photoelectron spectroscopy. The regular array of steps generates a lateral potential on the vicinal surfaces, which modifies the surface-electronic structure. Compared to Cu (001), the band bottom of the n=1 image-potential states shifts by 40 meV to lower binding energy. The periodicity of the step-induced superlattice manifests itself as back-folding of the n=1 and 2 dispersion bands. At the surface Brillouin zone boundary a mini-gap opens with a width of 135 meV for the first image-potential state on Cu (117). On the vicinal surfaces the lifetime of the image-potential states is reduced by a factor of three as compared to Cu (001). This is attributed to a narrowing of the surface-projected bulk-band gap when projected along the [11n] direction. While the dephasing rate of the first image-potential state is close to the decay rate, higher members of the Rydberg-like series show negligible dephasing. Received: 16 October 2001 / Revised version: 9 April 2002 / Published online: 6 June 2002     

Amplification Characteristics of Optical Fibres Doped with Nano Materials of InP

We take an enhanced structure of existing optical fibres to investigate the amplification characteristics. Nano and optical fibre technologies both are employed in our structure, i.e. the so-called nano-film amplification fibre where nano-film is inserted between the core and the inner cladding of the optical fibre. In the developed model, InP is chosen as a doped semiconductor to examine its amplification performance and 69.7nm is chosen as the thickness of the film. From our experimental results, the optical fibre structure shows its significant amplification characteristics for wavelength between 1080nm and 1491 nm. Amplification characteristics are also found in wavelengths 906-1044 nm and 1524-1596nm.     

Electronic structure of GaN(0001)‐2 × 2 thin films grown by PAMBE

Gallium nitride thin films were grown on silicon carbide (0001) by plasma‐assisted molecular beam epitaxy (PAMBE). The samples were cooled down in nitrogen plasma and characterized in situ by reflection high energy electron diffraction (RHEED), photoelectron spectroscopy (XPS/UPS), and atomic force microscopy (AFM) revealing stoichiometric and smooth GaN films virtually free of contaminations. We present valence band data obtained by UPS with strong emission from surface states inside the fundamental band gap. These states and the observed 2 × 2 surface reconstruction are highly sensitive towards residual molecules. Once these surface states have disappeared the original state could not be recovered by surface preparation methods underlining the necessity of in situ investigations on as‐grown surfaces. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The ground state and doubly-excited <Superscript>1,3</Superscript>P° states of hot-dense plasma-embedded Li<Superscript>+</Superscript> ions

We have investigated the ground state and the doubly excited ^1,3P^○ resonance states of plasma-embedded Li⁺ ion. The plasma effect is taken care of by using a screened Coulomb potential obtained from the Debye model. A correlated wave function has been used to represent the correlation effect between the charged particles. The ground state of Li⁺ in plasmas for different screening parameters has been estimated in the framework of Rayleigh-Ritz variational principle. In addition, a total of 18 resonances (9 each for ¹P^○ and ³P^○ states) below the n=2 Li⁺ thresholds has been estimated by calculating the density of states using the stabilization method. For each spin state, this includes four members in the 2snp₊ (2≤n ≤5) series, three members in the 2snp_- (3≤n ≤5) series, and two members in the 2pnd (n=3, 4) series. The resonance energies and widths for various Debye parameters ranging from infinity to a small value for these ^1,3P^○ resonance states along with the ground state energies of Li⁺ and the Li²⁺ (1S), Li²⁺ (2S) threshold energies are reported. Furthermore, the wavelengths for the photo-absorption of lithium ion from its ground state to such ¹P^○ resonance states for different Debye lengths are also reported.