Proton and Gamma Ray Induced Gain Degradation in Bipolar Transistor

This paper describes the results of the effect of 24 MeV proton and ⁶⁰Co γ-irradiation on the collector characteristics and forward current gain of commercial bipolar transistor (npn 2N2219A). The transistor has been exposed to these radiations in the biased condition and the collector characteristics and forward current gain have been measured as a function of proton fluence and γ-dose. The observation is that both the proton and γ-irradiation induce significant gain degradation in the transistor. The results are discussed in terms of displacement damage produced by energetic protons and γ-radiation in the bulk of the semiconductor.     

Electrochemiluminescence Quenching by Halide Ions at Bipolar Electrodes

Quenching of Ru(bpy)₃²⁺ electrochemiluminescence (ECL) by Cl^?, Br^?, and I^? ions was studied as a function of halide concentration in a bipolar electrochemical cell. All of the halides investigated showed similar qualitative behavior: above a critical concentration, ECL intensity was found to decrease linearly as the halide ion concentration was increased, due to dynamic quenching of Ru(bpy)₃²⁺ ECL. Stern‐Volmer slopes (K_SV) of 0.111±0.003, 4.2±0.3, and 6.2±0.3 mM^?1 were measured for Cl^?, Br^? and I^?, respectively. The magnitude of K_SV correlates with halide ion oxidation potential, consistent with an electron transfer quenching mechanism. Using the bipolar platform described herein, aqueous, halide‐containing solutions could be quantified rapidly using the sequential standard addition method. The lower detection limit is determined by a complex mechanism involving the competitive electrooxidation of halide ions and the ECL co‐reactants, as well as the passivation of the surface of the bipolar electrode, and was found to be 0.20±0.01, 0.08±0.01 and 10±1 mM, respectively, for I^?, Br^?, and Cl^?. The performance of the bipolar ECL quenching assay is comparable to previously published fluorescence quenching methods for the determination of halide ions, while being much simpler and less expensive to implement.     

Preparation of SAMS-CMC-CS bipolar membrane and its application in electro-generating FeO 4 2−

The preparation of SAMS-CMC-CS bipolar membrane grafted onto CMC by SAMS was reported. The cross-section view of SAMS-CMC-CS BM were studied by SEM. FT-IR spectrum indicated that SAMS-CMC-CS BM contained-SO ₃ ⁻ ,-COO⁻ and −N=CHR functional groups. Compared with CMC-CS BM, SAMS-CMC-CS BM appears to have better mechanical strength and chemical stability in alkali solution at [OH⁻]≥9.5 mol/L, with a swelling of 55 %. The electrochemical properties of SAMS-CMC-CS BM were also studied. SAMS-CS-CMC BM not only effectively prevented FeO ₄ ²⁻ from diffusing into the cathode chamber, but also played an important role in the supply of OH⁻ consumed during the electro-generated FeO ₄ ²⁻ process.      

Simulation of energy and fluence dependence of heavy ion induced displacement damage factor in bipolar junction transistor

This article presents the theoretical calculation of the variation of displacement damage factors as a function of energy and rad equivalent fluence in bipolar junction transistor for various particulate radiation viz., He, Si, Cl, Ti, Ni, Br, Ag, I, and Au. The calculation is based on the experimental data on γ-ray induced gain degradation in a commercial space borne BJT (2N3019). The method involves the calculation of γ-ray dose (rad(Si)) equivalent of effective particle fluence. The linear energy transfer (LET) in silicon for different particle radiation obtained from TRIM calculation has been used for the conversion of γ-dose into fluence of various particles. The estimation predicts a smooth increase in the displacement damage factor as the mass of the ion increases. Further, the displacement damage factor reaches a maximum at the same value of energy, which corresponds to maximum LET for all heavy ions. The maximum value of damage factor marginally decreases with increasing ion fluence for an ion of given energy. The results are compared with the data available in the literature for proton, deuteron, and helium induced displacement damage.     

双极性半导体钝化膜空间电荷电容分析

钝化膜的空间电荷电容的测量(Mott-Schottky(M-S)曲线)是研究其半导体性质的重要手段, 双极性半导体钝化膜在耗尽态电位区M-S曲线斜率往往会发生改变, 首先建立了半导体富集态、耗尽态以及反型态空间电荷电容的统一计算公式, 进而将双极性半导体钝化膜空间电荷电容等效为钝化膜/溶液界面处电容和内层钝化膜/外层钝化膜界面处的np结电容的串联, 模拟计算结果能够很好地解释M-S曲线斜率发生改变这一实验现象. 同时, 计算结果表明, 对于双极性半导体的M-S曲线, 利用其直线部分的斜率、直线与电位坐标轴的截距来确定钝化膜的载流子浓度以及平带电位会产生一定的误差.     

The Asymptotic Behavior and the Quasineutral Limit forthe Bipolar Euler-Poisson System withBoundary Effects and a Vacuum

In this paper, a one-dimensional bipolar Euler-Poisson system(a hydrodynamic model) from semiconductors or plasmas with boundary efects is considered. This system takes the form of Euler-Poisson with an electric field and frictional damping added to the momentum equations. The large-time behavior of uniformly bounded weak solutions to the initial-boundary value problem for the one-dimensional bipolar Euler-Poisson system is firstly presented. Next, two particle densities and the corresponding current momenta are verified to satisfy the porous medium equation and the classical Darcy’s law time asymptotically. Finally, as a by-product, the quasineutral limit of the weak solutions to the initial-boundary value problem is investigated in the sense that the bounded L∞entropy solution to the one-dimensional bipolar Euler-Poisson system converges to that of the corresponding one-dimensional compressible Euler equations with damping exponentially fast as t → +∞. As far as we know, this is the first result about the asymptotic behavior and the quasineutral limit for the one-dimensional bipolar Euler-Poisson system with boundary efects and a vacuum.     

A note on asymptotic behavior of solutions for the one-dimensional bipolar Euler-Poisson system

In this note, we consider a one-dimensional bipolar Euler-Poisson system (hydrodynamic model). This system takes the form of Euler-Poisson with electric field and frictional damping added to the momentum equations. When n₊≠n₋, paper [I. Gasser, L. Hsiao, H.-L. Li, Large time behavior of solutions of the bipolar hydrodynamical model for semiconductors, J. Differential Equations 192 (2003) 326-359] discussed the asymptotic behavior of small smooth solutions to the Cauchy problem of the one-dimensional bipolar Euler-Poisson system. Subsequent to [I. Gasser, L. Hsiao, H.-L. Li, Large time behavior of solutions of the bipolar hydrodynamical model for semiconductors, J. Differential Equations 192 (2003) 326-359], we investigate the asymptotic behavior of solutions to the Cauchy problem with , and obtain the optimal convergence rate toward the constant state . We accomplish the proofs by energy estimates and the decay rates of fundamental solutions of the heat-type equations.     

Co-ion leakage through bipolar membranes Influence on I–V responses and water-splitting efficiency

The influence of co-ion leakage through a bipolar membrane on both I–V response and current efficiency of water dissociation was studied. The monofilm bipolar membrane was synthetized from a pretreated ETFE film functionalized by quaternized ammonium groups on one side and sulphonic groups on the other. The co-ion leakage of this bipolar membrane immersed in NaCl solutions was measured by means of radiotracers. The results showed that the greater the co-ion leakage, the lower was the current efficiency of water dissociation. A theoretical analysis of ion transfer through the bipolar membrane pointing out the effect of boundary layer on the limiting leakage current is presented.     

Performance enhancement using the bipolar capacity of bipolar coded fiber Bragg gratings and balanced detection in the spectral encoded code-division-multiple-access systems

This paper proposes a performance-enhanced code-division-multiple-access (CDMA) system using modified pseudorandom noise (PN) coded fiber Bragg gratings (FBGs) with a bipolar optical CDMA encoder/decoder. The data were encoded either by a unipolar signature sequence of modified PN code or by its complement, depending on whether the data bit was ‘1’ or ‘0’. Numerical simulation confirmed that bit error rate (BER) performance largely improved due to the increased decision margin at the receiver. Furthermore, at the BER of 10⁻⁹, the tolerance of spectral power distortion in the optical source appeared to be nearly twice that of conventional optical CDMA systems.     

The low frequency conductance of bipolar membranes demonstrates the presence of a depletion layer

The electrical conductance of a 2-sheet bipolar membrane was measured as a function of frequency over the range 0.1 Hz–10 kHz in electrolyte solutions containing 1, 10 and 100 mM KCl. The 2-sheet bipolar membrane was also separated into its monopolar regions and their electrical properties were examined individually. The low frequency conductance of the bipolar membrane was always significantly less than the value which would have been obtained if the monopolar regions were too far apart to interact. The data suggest that the separation of the ion exchange regions was approximately ≤1 nm, even in the absence of a large DC current.