There are a wide variety of silica nanoformulations being investigated for biomedical applications. Silica nanoparticles can be produced using a wide variety of synthetic techniques with precise control over their physical and chemical characteristics. Inorganic nanoformulations are often criticized or neglected for their poor tolerance; however, extensive studies into silica nanoparticle biodistributions and toxicology have shown that silica nanoparticles may be well tolerated, and in some case are excreted or are biodegradable. Robust synthetic techniques have allowed silica nanoparticles to be developed for applications such as biomedical imaging contrast agents, ablative therapy sensitizers, and drug delivery vehicles. This review explores the synthetic techniques used to create and modify an assortment of silica nanoformulations, as well as several of the diagnostic and therapeutic applications. 相似文献
We theoretically propose a multifunctional photonic differentiation (DIFF) scheme based on phase demodulation using two cascaded linear filters. The photonic D1FF has a diversity of output forms, such as the 1 st order intensity DIFF, the 1 st order field DIFF and its inversion, and the 2nd-order field DIFF, depending on the relative shift between the optical carrier and the filter's resonant notches. As a proof, we also experimentally demonstrate the DIFF diversity using a phase modulator and two delay interferometers (Dis). The calculated average deviation is less than 7% for all DIFF waveforms. Our schemes show the advantages of flexible DIFF functions and forms, which may have different optical applications. For example, high order field differentiators can be used to generate complex temporal waveforms, and intensity differentiators are useful for the ultra-wideband pulse generation. 相似文献
We propose and demonstrate a silicon-on-insulator(SOI) on-chip optical pulse shaper based on four-tap finite impulse response. Due to different width designs in phase region of each tap, the phase differences for all taps are controlled by an external thermal source, resulting in an optical pulse shaper. We further demonstrate optical arbitrary waveform generation based on the optical pulse shaper assisted by an optical frequency comb injection. Four different optical waveforms are generated when setting the central wavelengths at 1533.78 nm and 1547.1 nm and setting the thermal source temperatures at 23℃ and 33℃, respectively. Our scheme has distinct advantages of compactness, capability for integrating with electronics since the integrated silicon waveguide is employed. 相似文献
Three novel bent-shaped monomers, namely 1,3-phenylene bis-{4-[4-(n-allyloxyalkyloxy)phenylazo]benzoate} 5a–c, containing azobenzene as side arms, resorcinol as central units and terminal double bonds as polymerisable functional groups were synthesised and characterised. The mesophase behaviour was investigated by polarising optical microscopy, differential scanning calorimetry and X-ray diffraction measurements and it was found that all three compounds display SmAintercal mesophases. These bent-shaped molecules exhibit strong photoisomerisation behaviour in solutions in which trans to cis isomerisation takes about 50 seconds whereas the reverse process takes almost 31 hours. 相似文献
High performance semiconductor lasers on silicon are critical elements of next generation photonic integrated circuits. Transfer printing methods provide promising paths to achieve hybrid integration of III‐V devices on Si platforms. This paper presents materials and procedures for epitaxially releasing thin‐film microscale GaAs based lasers after their full fabrication on GaAs native substrates, and for subsequently transfer printing arrays of them onto Si wafers. An indium‐silver based alloy serves as a thermally conductive bonding interface between the lasers and the Si, for enhanced performance. Numerical calculations provide comparative insights into thermal properties for devices with metallic, organic and semiconductor interfaces. Under current injection, the first of these three interfaces provides, by far, the lowest operating temperatures. Such devices exhibit continuous‐wave lasing in the near‐infrared range under electrical pumping, with performance comparable to unreleased devices on their native substrates.
Dynamic charge carriers play a vital role in active photonic quantum/nanodevices, such as electrically pumped semiconductor lasers. Here we present a systematic experimental study of gain‐providing charge‐carrier distribution in a lasing interband cascade laser. The unique charge‐carrier distribution profile in the quantum‐well active region is quantitatively measured at nanometer scales by using a noninvasive scanning voltage microscopy technique. Experimental results clearly confirm the accumulation and spatial segregation of holes and electrons in the beating heart of the device. The measurement also shows that the charge‐carrier density is essentially clamped in the presence of stimulated emission at low temperatures. The threshold charge‐carrier density exhibits a linear but fairly weak temperature dependence, in contrast to the exponential temperature dependence of the threshold current. The experimental approach will lead to a deeper understanding of fundamental processes that govern the operation and performance of nanoelectronic devices, quantum devices and optoelectronic devices.
This article presents a novel III‐V on silicon laser. This work exploits the phenomenon that a passive silicon cavity, side‐coupled to a III‐V waveguide, will provide high and narrow‐band reflectivity into the III‐V waveguide: the resonant mirror. This results in an electrically pumped laser with a threshold current of 4 mA and a side‐mode suppression ratio up to 48 dB.