Evolution of stress and strain relaxation of Ge and SiGe alloy films on Si(0 0 1)

The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation.     

离子束引起的在Al／Cr双层薄膜界面处的原子混合

用600keV的Kr~ 离子轰击Al/Cr双层薄膜样品进行界面原子反应及相互混合的研究。实验样品是在单晶硅上蒸镀约500nm厚的铝膜,相继再蒸上所需厚度的铬膜而制成的。轰击剂量为2.0×10~(15)-2.5×10~(16)Kr~ /cm~2。用2.0MeVa粒子对轰击前后的样品进行了卢瑟福背散射(RBS)分析,发现界面处有明显的原子混合存在;当轰击剂量≥1.0×10~(16)Kr~ /cm~2时,RBS谱出现有明显的坪台,经拟合计算和x射线衍射(XRD)测量证实确有化合物Al_(13)Cr_2存在;还分别得到了原子混合量及混合效率与轰击剂量的关系;最后对界面处的原子混合机制进行了讨论。     

Quantitative measurement of tip-sample forces by dynamic force spectroscopy in ambient conditions

We introduce a dynamic force spectroscopy technique enabling the quantitative measurement of conservative and dissipative tip-sample forces in ambient conditions. In difference to the commonly detected force-vs-distance curves dynamic force microscopy allows to measure the full range of tip-sample forces without hysteresis effects caused by a jump-to-contact. The approach is based on the specific behavior of a self-driven cantilever (frequency-modulation technique). Experimental applications on different samples (Fischer-sample, silicon wafer) are presented.     

Kinetics and equilibrium of small metallic clusters: Ab initio confinement molecular dynamics study of 4

The ab initio molecular dynamics (AIMD) [1] is combined with the heuristic, successive confinement method of surveying a potential energy surface (PES) [2], thereby offering a framework for the simulation study of kinetics and equilibrium properties of metallic clusters. This approach is applied to the study of Au₄, a cluster possessing a simple but specific PES, which consists of very shallow and deep basins and due to this presents a challenge to the conventional AIMD methods. Among other things, the probabilities of the transitions between isomers have been found, and on this basis, both the time-dependent and equilibrium populations of the isomers have been calculated for the conditions typical of the NeNePo experiments [3] in the femtosecond pump-probe spectroscopy.     

Surface roughness investigation of semi-conductor wafers

Conventionally, surface roughness is predominantly determined through the use of stylus instruments. However, there are certain limitations involved in the method, particularly when a test specimen, such as a silicon wafer, has a smooth mirror-like surface. Hence, it is necessary to explore alternative non-contact techniques. Light scattering has recently been gaining popularity as an optical technique to provide prompt and precise inspection of surface roughness. In this paper, the total integrated scattering (TIS) model is modified to retrieve parameters on surface micro-topography through light scattering. The applicability of the proposed modified TIS model is studied and compared with an atomic force microscope. Experimental results obtained show that the proposed technique is highly accurate for measuring surface roughness in the nanometer range.     

Structural characterization of nanopatterned surfaces

In this work, chemically and topographically nanopatterned surfaces were produced by a top-down processing approach for biosensing devices. The nanopatterning was the result of the combination of plasma polymerisation (pp) of biofunctional materials and colloidal lithography techniques. The morphological and chemical properties induced by the plasma deposition-etching treatment were characterised by optical method combining ellipsometry and Fourier Transform Infrared spectroscopy studies. This method supported by atomic force microscopy measurements, allowed the full optical characterization of each step of the top-down process. The optical characterization of the end-up nanopatterned samples demonstrated that the chosen process is able to produce well-defined nanostructured surfaces with controlled chemical and morphological properties.     

火焰原子吸收法测定人体胆结石中的铜、锌、钙、镁

本文介绍了火焰原子吸收法测定人体胆结石中铜、锌、钙、镁元素含量的测试条件及介质的影响，测试结果表明该方法具有较好的准确度和精密度，适合于医学临床应用。     

Atomic scale properties of interior interfaces of semiconductor heterostructures as determined by quasi-digital highly selective etching and atomic force microscopy

We report on first experiments combining quasi-digital highly selective etching and atomic force microscopy (AFM) to examine the interior interfaces of semiconductor heterostructures. Lattice matched (GaIn)As/InP heterostructures grown by metalorganic vapour-phase epitaxy (MOVPE) are taken as a model system to check the capabilities of this new method. Standard selective etchants for different material systems have been optimized in selectivity and etch rate to achieve a quasi-digital etching behaviour. In this way, the real structure of interior interfaces can be determined by AFM. We find a significant difference between the surface of the heterostructure and the interior interfaces.     

电热蒸发进样微波等离子体炬原子发射光谱法中共存元素的影响

本文考察了以微波等离子体炬（MPT）为光源，电热钽丝环进样时，溶液中共存元素对发射信号的影响。     

Spectroscopy on very neutron-rich nuclei beyond N = 20

Recent studies on nuclear structure by using radioactive isotope beams available at the RIKEN projectile-fragment separator (RIPS) are introduced. Special emphasis is given to two selected experiments from recent programs that highlight studies on the magicity loss observed for very neutron-rich nuclei beyond N = 20 in the “island-of-inversion” region; the particle stability of ³¹F, and the low-lying excited states of ³⁴Mg. Received: 1 May 2001 / Accepted: 4 December 2001