Excimer-laser-assisted RF glow-discharge deposition of amorphous and microcrystalline silicon thin films

We combine the deposition of Hydrogenated amorphous Silicon (a-Si:H) by rf glow discharge with XeCl-excimer laser irradiation of the growing surface in order to obtain different kinds of silicon films in the same deposition system. In-situ UV-visible ellipsometry allows us to measure the optical properties of the films as the laser fluence is increased from 0 up to 180 mJ/cm² in separate depositions. For fixed glow-discharge conditions and a substrate temperature of 250° C we observe dramatic changes in the film structure as the laser fluence is increased. With respect to a reference a-Si:H film (no laser irradiation) we observe at low laser fluences (15–60 mJ/cm²) that the film remains amorphous but demonstrates enchanced surface roughness and bulk porosity. At intermediate fluences (80–165 m/Jcm²), we obtain an amorphous film with an enhanced density with respect to the reference film. Finally, at high fluences (165–180 mJ/cm²), we obtain microcrystalline films. The in-situ ellipsometry measurements are complemented by ex-situ measurements of the dark conductivity, X-ray diffraction, and Elastic Recoil Detection Analysis (ERDA). Simulation of the temperature profiles for different film thicknesses and for three laser fluences indicates that crystallization occurs if the surface temperature reaches the melting point of a-Si:H ( 1420 K). The effects of laser treatment on the film properties are discussed by taking into account the photonic and thermal effects of laser irradiation.Presented at LASERION 93, Munich, June 21–23, 1993     

废渣中Pb、Cr、Ba、As测定方法的改进

本文利用高频电感耦合等离子体－发射光谱仪直接测定了印钞厂废渣中的Pb、Cr、Ba、As4种微量元素。方法简便、快速、可靠,具有良好的精密度和准确度。相对标准偏差为1．3％－5．8％,回收率为94％－103％。测定结果令人满意。     

Improvement in magnetic properties of La substituted BaFe12O19 particles prepared with an unusually low Fe/Ba molar ratio

In this study, effect of lanthanum substitution on the phase composition, lattice parameters and magnetic properties of barium hexaferrite has been studied in samples synthesized in ammonium nitrate melt. Samples, prepared with different lanthanum amount and having various initial Fe/(Ba+La) ratios in between 12 and 2 {(Ba_1−xLa_x)·n Fe₂O₃, where 0≤x≤1 and 1≤n≤6)}, are sintered at temperatures from 800 to 1200 °C. The lattice parameters, both a and c, decreases with increasing La amount which results in a decrease of the unit cell volume. The scanning electron microscope micrographs show that the pure and La-substituted sample with x=0.3, both calcinated at 1000 °C, have grain sizes smaller than 1 μm. The coercivities of the La-substituted samples increase with increasing La amount and reaches to a maximum value of 5.73 kOe, when x=0.3. Sintering at higher temperatures (above 1000 °C) decreases the coercivity, resembling a transition from single to multi-domain behavior of the particles, while saturation magnetization of the samples continues to increase due to the increasing grain size. Magnetization measurements of the samples prepared with different Fe/(Ba+La) molar ratios, n's, revealed that the specific saturation magnetization slightly increases with decreasing n, while coercivities fluctuates around 5.5 kOe. However, a sharp increase in the saturation magnetization has been observed in the sample having n=1 and washed in HCl. It was measured as 59.2 emu/g at 15 kOe, which is higher than that of the pure sample (57.5 emu/g). Thus, the magnetic parameters are optimized in the sample Ba_0.7La_0.3Fe₁₂O₁₉ so as to maximize both coercivity and specific saturation magnetization in the HCl-washed sample synthesized by starting with an unusually low Fe/(Ba+La) molar ratio of 2 (or n=1).     

取代基对N-H•••O=C氢键二聚体中氢键强度的影响

使用MP2方法研究了N-H•••O=C氢键二聚体的氢键强度,探讨了不同取代基对N-H•••O=C氢键强度的影响.研究发现,可以通过改变质子供体或受体分子上取代基的供电性或吸电性来调控氢键强度:乙基等供电子基团对N-H•••O=C氢键强度的调节作用不大;NO2和CN等强吸电子基团可极大地改变N-H•••O=C氢键强度;质子供体分子中的强吸电子基团如CN可使N-H•••O=C氢键强度增强多达4.6kcal/mol,质子受体分子中的强吸电子基团如NO2可使N-H•••O=C氢键强度减弱多达2.6kcal/mol.自然键轨道(NBO)分析表明,N-H•••O=C氢键强度越强,参与形成氢键的氢原子电荷越正,氧原子电荷越负,单体分子间电荷转移越多,N-H•••O=C氢键中氧原子孤对电子n(O)对N-H反键轨道σ*(N-H)的二阶稳定化能越大.     

Valence fluctuation in Ce2Co3Ge5 and crystal field effect in Pr2Co3Ge5

Polycrystalline samples of ternary rare-earth germanides R₂Co₃Ge₅ (R=La, Ce and Pr) have been prepared and investigated by means of magnetic susceptibility, isothermal magnetization, electrical resistivity and specific heat measurements. All these compounds crystallize in orthorhombic U₂Co₃Si₅ structure (space group Ibam). No evidence of magnetic or superconducting transition is observed in any of these compounds down to 2 K. The unit cell volume of Ce₂Co₃Ge₅ deviates from the expected lanthanide contraction, indicating non trivalent state of Ce ions in this compound. The reduced value of effective moment (μ_eff≈0.95 μ_B) compared to that expected for trivalent Ce ions further supports valence-fluctuating nature of Ce in Ce₂Co₃Ge₅. The observed temperature dependence of magnetic susceptibility is consistent with the ionic interconfiguration fluctuation (ICF) model. Although no sharp anomaly due to a phase transition is seen, a broad Schottky-type anomaly is observed in the magnetic part of specific heat of Pr₂Co₃Ge₅. An analysis of C_mag data suggests a singlet ground state in Pr₂Co₃Ge₅ separated from the singlet first excited state by 22 K and a doublet second excited state at 73 K.     

Concept of the field-driven domain wall motion memory

In this paper, the concept of field-driven domain wall motion memory is presented. It is confirmed that a domain is shifted with a carefully designed non-uniform field by micromagnetic simulations. The shift of a domain—a bit—can be established by the motion of two domain walls to the same direction and the same distance. In order to get a better understanding of the domain wall motion under the non-uniform transverse magnetic field, we investigate the motion of the transverse Néel-type domain wall by micromagnetic simulations and the collective coordinate approach. The validity of the equation of motion for the domain wall is confirmed by the micromagnetic simulations as functions of the gradient of the non-uniform field, the saturation magnetization, and the Gilbert damping parameter α.     

Quantum Monte Carlo study on the phase transition for a generalized two-dimensional staggered dimerized Heisenberg model

In order to gain a deeper understanding of the quantum criticality in the explicitly staggered dimerized Heisenberg models,we study a generalized staggered dimer model named the J0-J1-J2 model,which corresponds to the staggered J-J ' model on a square lattice and a honeycomb lattice when J1/J0 equals 1 and 0,respectively.Using the quantum Monte Carlo method,we investigate all the quantum critical points of these models with J1/J0 changing from 0 to 1 as a function of coupling ratio α=J2/J0.We extract all the critical values of the coupling ratio αc for these models,and we also obtain the critical exponents ν,β/ν,and η using different finite-size scaling anstz,.All these exponents are not consistent with the three-dimensional Heisenberg universality class,indicating some unconventional quantum ciritcial points in these models.     

Analysis of surface and material modifications caused by laser drilling of AlN ceramics

For the laser drilling of aluminum nitride ceramic the processing results and the effects related to pulsed irradiation were investigated. Images of the drilled surface revealed regular, cylindrically shaped holes of about 100 μm in diameter independently of the laser wavelength (1064/532/355 or 266 nm). The holes were surrounded by circular heat-affected zones of larger diameter. A comparison of the elemental compositions of the original material and the processed one indicated a decrease of the nitrogen concentration in the affected area. The spectral analysis of the ablated material composition revealed the presence of ions and neutrals in dependence on the laser intensity applied. It was found that at intensity values close to the ablation threshold the ejected material consisted mainly of neutrals, while doubling of the intensity resulted in appearance of single-ionized Al species, which were also observed together with Al clusters in the mass spectra of the UV-excited plasma. Their prevailing content was revealed for drilling at higher intensities around 15 GW/cm² at 532 nm. Results of model calculations indicated, in agreement with the experiment, that at the threshold the ceramic decomposes into gaseous nitrogen and solid Al particulates, while at a higher fluence the material particles vaporize and influence the quality of drilling.     

Manipulation of ultracold atomic mixtures using microwave techniques

We used microwave radiation to evaporatively cool a mixture of of ¹³³Cs and ⁸⁷Rb atoms in a magnetic trap. A mixture composed of an equal number (around 10⁴) of Rb and Cs atoms in their doubly polarized states at ultracold temperatures was prepared. We also used microwaves to selectively evaporate atoms in different Zeeman states.     

Effects of annealing time on infrared emissivity of the Pt film grown on Ni alloy

Platinum films were sputter-deposited on polished nickel alloy substrates. The platinum thin films were applied to serve as low-emissivity layers to reflect thermal radiation. The platinum-coated samples were then heated in the air at 600 °C to explore the effects of annealing time on the emissivity of platinum films. The results show that the grain size of the Pt films increased with the increasing annealing time while their dc electrical resistivity decreased. Besides, the IR emissivitiy of the films gradually decreased with the increasing annealing time. Especially, when the annealing time reached 150 h, the average IR emissivity at the wavelength of 3-14 μm was only about 0.1. Moreover, the chemical analysis indicated that the Pt films on Ni-based alloy exhibit a good resistance against oxidation at 600 °C.