Growth and spectroscopic properties of RE, Mn:YAP (RE=Yb and Ce) photorefractive crystals

RE, Mn:YAP (RE=Yb and Ce) crystals with dimension of Φ 25×60 mm were successfully grown by the Czochralski method. The spectroscopic properties of RE, Mn:YAP (RE=Yb and Ce) crystals before and after γ-irradiation were investigated at room temperature. The results show that the content of Mn⁴⁺ ions was increased with the Yb³⁺ ions co-doping, but decreased by Ce³⁺ ions co-doping. Thermoluminescence (TL) spectra of the crystals indicate three steps of recombination, and the probable recombination processes were discussed.     

LiMBO3 : Dy3+材料的发光特性

采用固相法制备了LiM(M=Ca, Sr, Ba)BO₃ : Dy³⁺材料,并研究了材料的发光特性。LiM(M=Ca, Sr, Ba)BO₃ : Dy³⁺材料的发射光谱均呈多峰发射,对应于Ca,Sr,Ba,其主发射峰分别是Dy³⁺的⁴F_9/2→⁶H_15/2(484,486,486 nm),⁶H_13/2(577,578,578 nm)和⁶H_11/2(668,668,666 nm)跃迁。监测黄色发射峰时,所得激发光 谱峰值位置相同,主激发峰分别为331,368, 397,433,462,478 nm,对应Dy³⁺的⁶H_15/2→ ⁴D_7/2,⁶P_7/2,⁶M_21/2,⁴G_11/2,⁴I_15/2和⁶F_9/2跃迁。研究了敏化剂Ce³⁺及电荷补偿剂Li⁺、Na⁺和K⁺对LiM(M=Ca, Sr, Ba)BO₃ : Dy³⁺材料发光强度的影响。结果显示:加入敏化剂Ce³⁺提高了材料的发光强度,发光强度最大处对应的Ce³⁺浓度为3%;加入电荷补偿剂Li⁺、Na⁺和K⁺后,材料的发光强度也得到了明显提高,但发光强度最大处对应的Li⁺、Na⁺和K⁺浓度不同,依次为4%、4%和3%。     

Growth of gem-grade nitrogen-doped diamond crystals heavily doped with the addition of Ba（N3）2

Additive Ba(N 3) 2 as a source of nitrogen is heavily doped into the graphite-Fe-based alloy system to grow nitrogendoped diamond crystals under a relatively high pressure (about 6.0 GPa) by employing the temperature gradient method.Gem-grade diamond crystal with a size of around 5 mm and a nitrogen concentration of about 1173 ppm is successfully synthesised for the first time under high pressure and high temperature in a China-type cubic anvil highpressure apparatus.The growth habit of diamond crystal under the environment with high degree of nitrogen doping is investigated.It is found that the morphologies of heavily nitrogen-doped diamond crystals are all of octahedral shape dominated by {111} facets.The effects of temperature and duration on nitrogen concentration and form are explored by infrared absorption spectra.The results indicate that nitrogen impurity is present in diamond predominantly in the dispersed form accompanied by aggregated form,and the aggregated nitrogen concentration in diamond increases with temperature and duration.In addition,it is indicated that nitrogen donors are more easily incorporated into growing crystals at higher temperature.Strains in nitrogen-doped diamond crystal are characterized by micro-Raman spectroscopy.Measurement results demonstrate that the undoped diamond crystals exhibit the compressive stress,whereas diamond crystals heavily doped with the addition of Ba(N 3) 2 display the tensile stress.     

第一性原理研究KDP晶体中Ba取代K点缺陷

 用基于第一性原理的CASTEP模拟了Ba替代K缺陷前后形成的电子结构和能态密度。发现晶体能带宽度降至6.4 eV左右,对应着380 nm的双光子吸收,这一结果可以解释掺Ba晶体在紫外波段的吸收现象。Ba替代K点缺陷仅使其周围的晶格及电子结构发生轻微畸变,对晶体整体结构影响不大。     

Photocontrolled mechanical phenomena in photochromic doped polymeric systems

This work examines volume changes at the sub-micron scale, induced photochemically in polymeric matrices doped with photochromic molecules. To achieve this, spiropyran is employed as a photochromic molecule embedded in polyethylmethacrylate-co-methylacrylate (PEMMA) matrices. Spiropyran can be reversibly interconverted to merocyanine, its coloured isomer, by irradiation at 248 nm and 532 nm, correspondingly. It is demonstrated that the interconversion between the two forms activates volume changes in the polymer matrix. To this end, off-axis reflection holographic interferometry is employed as a sensitive probe of the induced volume changes. This scheme provides a novel method for controlling sub-micron volume changes reversibly, as required in several microactuator designs. Received: 17 April 2002 / Accepted: 18 April 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +30-810/391-318, E-mail: nassia@iesl.forth.gr     

Transmission and scanning electron microscopy studies of single femtosecond- laser-pulse ablation of silicon

The final state of the material resulting from laser irradiation of silicon using 130 fs pulses at 790 nm was studied using a number of techniques including scanning and transmission electron microscopies, as well as atomic force microscopy. Structural details and the level of damage to the nearby solid following irradiation were characterized and are discussed in the context of recent dynamical studies. Received: 28 September 2001 / Accepted: 3 March 2002 / Published online: 19 July 2002 RID="*" ID="*"Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S 4M1, Canada RID="**" ID="**"Corresponding author. Fax: +1-905/521-2773, E-mail: borowia@mcmaster.ca RID="***" ID="***"Present address: Department of Physics and Astronomy, University of Glasgow, Glasgow, G12 8QQ, UK RID="****" ID="****"Department of Materials Science and the CEMD, McMaster University, Hamilton, Ontario, L8S 4M1, Canada RID="*****" ID="*****"Departments of Engineering Physics, and Physics and Astronomy, and the CEMD, McMaster University, Hamilton, Ontario, L8S 4M1, Canada     

Ar 原子内嵌对C60 富勒烯碰撞的影响

基于半经验势的分子动力学模型， 研究了相同能量下 C₆₀ +C₆₀ 与 Ar@C₆₀ +Ar@C₆₀ 的对心碰撞后形成的富勒烯结构的不同。 发现在相同的能量下， Ar@C60 +Ar@C60 形成的碰撞产物的结构相比 C₆₀ +C₆₀ 碰撞产物的结构有着明显的不同: 前者形成“花生”状的新富勒烯结构， 后者形成“哑铃”状的双富勒烯结构。     

Laser rapid thermal annealing of quantum semiconductor wafers: a one step bandgap engineering technique

We report on a new Laser Rapid Thermal Annealing (Laser-RTA) technique for one-step bandgap engineering at selected areas of quantum semiconductor wafers. The technique is based on using a 150 W 980 nm fiber coupled laser diode and a 30 W TEM00 1064 nm Nd:YAG laser for background heating and ‘writing’, respectively, the regions of the quantum well intermixed (QWI) material. The implementation of a 3D Finite Element Method for modeling of laser induced temperature profiles allows for the design of processing schemes that are required for accurate bandgap engineering at the wafer level. We demonstrate that arbitrary shaped lines of the QWI material can be fabricated with the Laser-RTA technique in InGaAs/InGaAsP quantum well microstructures.     

A Fluorescent and Phosphorescent Nanoporous Solid: Crystalline Calix[4]arene

Calix[4]arene forms elongated nanoporous microcrystals. The pores are linear nano-channels (1.7 nm diameter) arranged in a honeycomb network. The crystals luminesce at room temperature according to a variety of processes that include monomer fluorescence (lifetime of ca. 1.1 ns), dimer fluorescence (lifetime of ca. 5.4 ns), and monomer phosphorescence (lifetime of ca. 2 s). The dimers result from pi-orbital overlap of adjacent phenol groups from neighboring nano-channels, with C-C distances of ca. 4 A.     

Impact of O2 exposure on surface crystallinity of clean and Ba terminated Ge(1 0 0) surfaces

In analogy with the case of Sr on Si [Y. Liang, S. Gan, M. Engelhard, Appl. Phys. Lett. 79 (2001) 3591], we studied surface crystallinity and oxidation behaviour of clean and Ba terminated Ge(1 0 0) surfaces as a function of oxygen pressure and temperature. The structural and chemical changes in the Ge surface layer were monitored by LEED, XPS and real-time RHEED. In contrast to the oxidation retarding effect, observed for 1/2 monolayer of Sr on Si, the presence of a Ba termination layer leads to a pronounced increase in Ge oxidation rate with respect to clean Ge. In fact, while the Ge(1 0 0) surface terminated with 1/2 ML Ba amorphizes for a pO₂ of 10⁻² Torr, LEED indicates that clean Ge forms a thin (4.5 Å), 1 × 1 ordered oxide upon aggressive O₂ exposure (150 Torr, 200 °C, 30 min). We briefly discuss the origins for the difference in behaviour between Ba on Ge and Sr on Si.