全文获取类型
收费全文 | 38716篇 |
免费 | 4720篇 |
国内免费 | 2529篇 |
专业分类
化学 | 23237篇 |
晶体学 | 326篇 |
力学 | 907篇 |
综合类 | 219篇 |
数学 | 4057篇 |
物理学 | 17219篇 |
出版年
2024年 | 53篇 |
2023年 | 286篇 |
2022年 | 845篇 |
2021年 | 957篇 |
2020年 | 1190篇 |
2019年 | 1126篇 |
2018年 | 1016篇 |
2017年 | 1193篇 |
2016年 | 1768篇 |
2015年 | 1715篇 |
2014年 | 2042篇 |
2013年 | 3249篇 |
2012年 | 2342篇 |
2011年 | 2587篇 |
2010年 | 2093篇 |
2009年 | 2710篇 |
2008年 | 2631篇 |
2007年 | 2725篇 |
2006年 | 2460篇 |
2005年 | 1978篇 |
2004年 | 1718篇 |
2003年 | 1480篇 |
2002年 | 1166篇 |
2001年 | 931篇 |
2000年 | 873篇 |
1999年 | 764篇 |
1998年 | 674篇 |
1997年 | 640篇 |
1996年 | 488篇 |
1995年 | 392篇 |
1994年 | 304篇 |
1993年 | 255篇 |
1992年 | 211篇 |
1991年 | 168篇 |
1990年 | 116篇 |
1989年 | 106篇 |
1988年 | 193篇 |
1987年 | 77篇 |
1986年 | 54篇 |
1985年 | 59篇 |
1984年 | 56篇 |
1983年 | 18篇 |
1982年 | 47篇 |
1981年 | 54篇 |
1980年 | 38篇 |
1979年 | 20篇 |
1978年 | 16篇 |
1976年 | 15篇 |
1973年 | 15篇 |
1972年 | 11篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
71.
72.
In different regimes of exposure of metals to pulsed laser radiation, we show the role played by the liquid-drop phase formed from the target material in a laser-induced erosion plume due to bulk vaporization, in the dynamics of this plume. For some metals, the ranges of power densities of the acting laser radiation, at which the condensed-phase particles influence the passage of laser radiation to the target surface, have been determined experimentally. The mechanism of realization of a low-threshold breakdown has been revealed. 相似文献
73.
74.
We study initial boundary value problems for linear scalar evolutionpartial differential equations, with spatial derivatives ofarbitrary order, posed on the domain {t > 0, 0 < x <L}. We show that the solution can be expressed as an integralin the complex k-plane. This integral is defined in terms ofan x-transform of the initial condition and a t-transform ofthe boundary conditions. The derivation of this integral representationrelies on the analysis of the global relation, which is an algebraicrelation defined in the complex k-plane coupling all boundaryvalues of the solution. For particular cases, such as the case of periodic boundaryconditions, or the case of boundary value problems for even-orderPDEs, it is possible to obtain directly from the global relationan alternative representation for the solution, in the formof an infinite series. We stress, however, that there existinitial boundary value problems for which the only representationis an integral which cannot be written as an infinite series.An example of such a problem is provided by the linearized versionof the KdV equation. Similarly, in general the solution of odd-orderlinear initial boundary value problems on a finite intervalcannot be expressed in terms of an infinite series. 相似文献
75.
We examine several interesting relationships and expressions involving Fourier-Feynman transform, convolution product and
first variation for functionals in the Fresnel class F(B) of an abstract Wiener space B. We also prove a translation theorem and Parseval's identity for the analytic Feynman integral.
This revised version was published online in June 2006 with corrections to the Cover Date. 相似文献
76.
本文对在过渡金属铁、镍电极表面制备得到的γ-氨丙基三甲氧基硅烷(γ-APS)膜进行了研究。实验中对硅烷膜用X-射线光电子能谱(XPS)、现场表面增强拉曼散射光谱(SERS)和原子力显微镜(AFM)进行了表征。X-射线光电子能谱(XPS)的结果发现存在两个N1s峰,表明γ-APS膜中的氨基有两种存在方式:自由氨基和质子化氨基。实验中还发现现场表面增强拉曼散射光谱(SERS)是研究金属/γ-APS体系中界面层结构非常有效的手段,SERS结果表明硅醇羟基和氨基发生了竞争吸附,且γ-APS分子在外加电位等条件的影响下吸附状态会发生一定变化。原子力显微镜(AFM)的表征结果在微观上显示电极表面的γ-APS膜上形成了一种较规则的微孔结构,这种结构可能与基底的性质有关。 相似文献
77.
78.
We report a comprehensive analyzes of the Fourier transform infrared (FTIR) absorption and Raman scattering data on the structural and vibrational properties of dilute ternary GaAs1−xNx,[GaP1−xNx] (x<0.03) alloys grown on GaAs [GaP] by metal organic chemical vapor deposition (MOCVD) and solid source molecular beam epitaxy (MBE). By using realistic total energy and lattice dynamical calculations, the origin of experimentally observed N-induced vibrational features are characterized. Useful information is obtained about the structural stability, vibrational frequencies, lattice relaxations and compositional disorder in GaNAs (GaNP) alloys. At lower composition (x<0.015) most of the N atoms occupy the As [P] sublattice {NAs[NP]}—they prefer moving out of their substitutional sites to more energetically favorable locations at higher x. Our results for the N-isotopic shifts of local mode frequencies compare favorably well with the existing FTIR data. 相似文献
79.
J. Wang G. A. Khodaparast J. Kono T. Slupinski A. Oiwa H. Munekata 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):412
We have used two-color time-resolved magneto-optical Kerr effect spectroscopy to manipulate and detect dynamic processes of spin/magnetic order in a ferromagnetic semiconductor InMnAs. We observed ultrafast photo-induced “softening” (i.e., transient decrease of coercivity) due to spin-polarized transient carriers. This transient softening persists only during the carrier lifetime (2 ps) and returns to its original value as soon as the carriers recombine to disappear. Our data clearly demonstrates that magnetic properties, e.g., coercivity, can be strongly and reversibly modified in an ultrafast manner. We attribute the origin of this unusual phenomenon to carrier-mediated ferromagnetic exchange interactions between Mn ions. We discuss the dependence of data on the pump polarization, pump intensity, and sample temperature. Our observation opens up new possibilities for ultrafast optical manipulation of ferromagnetic order as well as providing a new avenue for studying the dynamics of long-range collective order in strongly correlated many-body systems. 相似文献
80.
M. Missous C. Mitchell J. Sly K. T. Lai R. Gupta S. K. Haywood 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):496
Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In0.84Ga0.16As/AlAs/In0.52Al0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In0.84Ga0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated. 相似文献