On the Log-Laplace Equation for Nonlocal Operators Generating Sub-Markovian Semigroups

We consider the semilinear Cauchy problem for a class of pseudo-differential operators generating sub-Markovian semigroups. Solutions of such problems with negative definite nonlinearity play an important role in constructing branching measure-valued processes. We establish local existence and uniqueness of solutions in the context of the Dirichlet space associated to the problem. Comparison and global properties of solutions are also studied. Accepted 29 August 2001. Online publication 17 December 2001.     

Evolution of stress and strain relaxation of Ge and SiGe alloy films on Si(0 0 1)

The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation.     

离子束引起的在Al／Cr双层薄膜界面处的原子混合

用600keV的Kr~ 离子轰击Al/Cr双层薄膜样品进行界面原子反应及相互混合的研究。实验样品是在单晶硅上蒸镀约500nm厚的铝膜,相继再蒸上所需厚度的铬膜而制成的。轰击剂量为2.0×10~(15)-2.5×10~(16)Kr~ /cm~2。用2.0MeVa粒子对轰击前后的样品进行了卢瑟福背散射(RBS)分析,发现界面处有明显的原子混合存在;当轰击剂量≥1.0×10~(16)Kr~ /cm~2时,RBS谱出现有明显的坪台,经拟合计算和x射线衍射(XRD)测量证实确有化合物Al_(13)Cr_2存在;还分别得到了原子混合量及混合效率与轰击剂量的关系;最后对界面处的原子混合机制进行了讨论。     

Quantitative measurement of tip-sample forces by dynamic force spectroscopy in ambient conditions

We introduce a dynamic force spectroscopy technique enabling the quantitative measurement of conservative and dissipative tip-sample forces in ambient conditions. In difference to the commonly detected force-vs-distance curves dynamic force microscopy allows to measure the full range of tip-sample forces without hysteresis effects caused by a jump-to-contact. The approach is based on the specific behavior of a self-driven cantilever (frequency-modulation technique). Experimental applications on different samples (Fischer-sample, silicon wafer) are presented.     

TiO2∶Mo体系的光子雪崩上转换

在 978nm激光二极管的激发下 ,Mo掺杂的TiO2 材料表现出很强的宽带上转换发光 ,该发光来源于 [MoO4]2 - 基团的激发态3T1 ,3T2 能级到基态1 A1 能级的电子跃迁 .通过研究发光强度与抽运功率的关系及上转换发光的上升时间曲线 ,发现TiO2 ∶Mo体系的上转换发光中存在着雪崩机制 ,应用转换函数理论分析了光子雪崩的产生条件和主要特征 ,理论结果和实验数据很好地符合     

Exact solutions and geometric phase factor of time-dependent three-generator quantum systems

There exist a number of typical and interesting systems and/or models, which possess three-generator Lie-algebraic structure, in atomic physics, quantum optics, nuclear physics and laser physics. The well-known fact that all simple 3-generator algebras are either isomorphic to the algebra sl (2, C) or to one of its real forms enables us to treat these time-dependent quantum systems in a unified way. By making use of both the Lewis-Riesenfeld invariant theory and the invariant-related unitary transformation formulation, the present paper obtains exact solutions of the time-dependent Schr?dinger equations governing various three-generator Lie-algebraic quantum systems. For some quantum systems whose time-dependent Hamiltonians have no quasialgebraic structures, it is shown that the exact solutions can also be obtained by working in a sub-Hilbert-space corresponding to a particular eigenvalue of the conserved generator (i.e., the time-independent invariant that commutes with the time-dependent Hamiltonian). The topological property of geometric phase factors and its adiabatic limit in time-dependent systems is briefly discussed. Received 6 July 2002 / Received in final form 21 October 2002 Published online 11 February 2003     

Kinetics and equilibrium of small metallic clusters: Ab initio confinement molecular dynamics study of 4

The ab initio molecular dynamics (AIMD) [1] is combined with the heuristic, successive confinement method of surveying a potential energy surface (PES) [2], thereby offering a framework for the simulation study of kinetics and equilibrium properties of metallic clusters. This approach is applied to the study of Au₄, a cluster possessing a simple but specific PES, which consists of very shallow and deep basins and due to this presents a challenge to the conventional AIMD methods. Among other things, the probabilities of the transitions between isomers have been found, and on this basis, both the time-dependent and equilibrium populations of the isomers have been calculated for the conditions typical of the NeNePo experiments [3] in the femtosecond pump-probe spectroscopy.     

SCDA for 3D lattice gases with repulsive interaction

The selfconsistent diagram approximation (SCDA) is generalized for three-dimensional lattice gases with nearest neighbor repulsive interactions. The free energy is represented in a closed form through elementary functions. Thermodynamical (phase diagrams, chemical potential and mean square fluctuations), structural (order parameter, distribution functions) as well as diffusional characteristics are investigated. The calculation results are compared with the Monte Carlo simulation data to demonstrate high precision of the SCDA in reproducing the equilibrium lattice gas characteristics. It is shown that similarly to two-dimensional systems the specific statistical memory effects strongly influence the lattice gas diffusion in the ordered states. Received 7 August 2002 / Received in final form 22 January 2003 Published online 24 April 2003     

Surface roughness investigation of semi-conductor wafers

Conventionally, surface roughness is predominantly determined through the use of stylus instruments. However, there are certain limitations involved in the method, particularly when a test specimen, such as a silicon wafer, has a smooth mirror-like surface. Hence, it is necessary to explore alternative non-contact techniques. Light scattering has recently been gaining popularity as an optical technique to provide prompt and precise inspection of surface roughness. In this paper, the total integrated scattering (TIS) model is modified to retrieve parameters on surface micro-topography through light scattering. The applicability of the proposed modified TIS model is studied and compared with an atomic force microscope. Experimental results obtained show that the proposed technique is highly accurate for measuring surface roughness in the nanometer range.