Calcium Sulfite Solids Activated by Iron for Enhancing As(III) Oxidation in Water

Desulfurized gypsum (DG) as a soil modifier imparts it with bulk solid sulfite. The Fe(III)–sulfite process in the liquid phase has shown great potential for the rapid removal of As(III), but the performance and mechanism of this process using DG as a sulfite source in aqueous solution remains unclear. In this work, employing solid CaSO₃ as a source of SO₃²⁻, we have studied the effects of different conditions (e.g., pH, Fe dosage, sulfite dosage) on As(III) oxidation in the Fe(III)–CaSO₃ system. The results show that 72.1% of As(III) was removed from solution by centrifugal treatment for 60 min at near-neutral pH. Quenching experiments have indicated that oxidation efficiencies of As(III) are due at 67.5% to HO^•, 17.5% to SO₅^•− and 15% to SO₄^•−. This finding may have promising implications in developing a new cost-effective technology for the treatment of arsenic-containing water using DG.     

ICP-MS测定动物肝脏中铅、镉和砷

利用电感耦合等离子体-质谱法(ICP-MS)同时测定动物肝脏中铅、镉、砷3种元素.样品经聚四氟乙烯高压消化罐消解后,以锗、铟、铋作为内标物质,补偿基体效应,直接用ICP-MS同时测定这3种元素,结果令人满意.该法线性范围宽,分析速度快,准确度和精密度均符合分析测试要求.     

ICP-AES测定葡萄糖酸钙中Pb、As、Cd等9个杂质元素

本文应用ICP-AES直接测定了葡萄糖酸钙中的Pb、As、Cd等9个杂质元素,对样品的消解方法、基体和酸介质的影响等进行了讨论.用基体匹配法消除钙基体的干扰,9个杂质元素测定的测定范围为:Pb 0.0008%-0.08%,Cu、Mg 0.0001%-0.01%,其余元素0.0003%-0.03%.加标回收率为95.8%-100.0%,相对标准偏差为0.16%-3.61%.     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

HG-ICP-MS同时测定生物样品中痕量As,Se,Hg

以HNO3为介质,采用自行研制的二级气液分离器代替易消耗的膜分离器,在优化的实验条件下,采用HG-ICP-MS实现了As,Se,Hg的同时测定,分别获得了0.022,0.016,0.009 ngmL的检出限。实验研究了二级气液分离器中的气液分离行为、样品酸度、NaBH4质量浓度和引入方式等因素对测定灵敏度和精密度的影响。实验的结果表明,HG-ICP-MS同时测定As,Se,Hg的主要干扰来自于Fe,cu等过渡金属离子,样品溶液中抗坏血酸-硫脲的加入可以掩蔽这些离子的干扰。利用所建立的方法测定了人发、灌木叶和大米粉标样中痕量的As,Se,Hg,结果与标准参考值相符。     

Recoil spectrometry: Ion accelerator based elemental characterisation of surface layers

Recoil Spectrometry covers a group of techniques that are very similar to the well known Rutherford backscattering Spectrometry technique, but with the important difference that one measures the recoiling target atom rather than the projectile ion. This makes it possible to determine both the identity of the recoil and its depth of origin from its energy and velocity, using a suitable detector system. The incident ion is typically high-energy (30–100MeV)³⁵C1,⁸¹Br or¹²⁷I. Low concentrations of light elements such as C, O and N can be profiled in a heavy matrix such as Fe or GaAs. Here we present an overview of mass and energy dispersive recoil Spectrometry and illustrate its successful use in some typical applications.     

As（Ⅲ）和As（V）与牛血清白蛋白的结合平衡研究

在模拟动物体生理条件下,研究As（Ⅲ）和As（V）与牛血清白蛋白（BSA）的相互作用．用氢化物发生．超低温捕集塬子吸收分光光度法测定平衡透析后As（Ⅲ）或As（V）的浓度,用Scatchard方法分别处理实验数据,确定结合部位和结合常数．发现当As（Ⅲ）浓度（CAs（Ⅲ）：CBsA≤1：1）较低时,在BSA中有1．3个强结合部位,结合常数为1．7×10^6,为强结合;当As（Ⅲ）的浓度（cAs（Ⅲ）：cBSA≥2：1）较高时,没有明显的特征结合点,表现为弱结合．而As（V）与BSA无任何结合作用．     

原子荧光法测定田七中砷的含量

采用了硝酸+高氨酸消化样品,AFS-2202原子荧光光谱仪测定中药田七中砷的含量,该方法的检出限可达0.09μg·L~(-1),回收率在91.0％～109.2％之间。     

电感耦合等离子体发射光谱法测定粗二氧化碲中 铜、铅、锑、铋、砷和硒

粗二氧化碲作为碲精炼或碲化工产品生产的重要原料,其中共存元素铜、铅、砷、锑、铋、硒含量的准确测定对于生产过程质量控制和贸易结算具有重要意义,但目前没有粗二氧化碲中铜、铅、砷、锑、铋、硒含量检测的标准分析方法。采用王水和饱和氟化氢铵分解试样,在王水和酒石酸介质中,选用Cu 327.393 nm、Pb 220.353 nm、Sb 217.582 nm、Bi 223.061 nm、As 193.696 nm、Se 196.026 nm为分析谱线,采用电感耦合等离子体发射光谱(ICP-AES)法测定粗二氧化碲中铜、铅、锑、铋、砷和硒含量。各元素校准曲线的相关系数均大于0.999;铜、铅、锑、铋、砷和硒的检出限分别为0.0004%、0.0005%、0.0006%、0.0007%、0.0004%和0.0007%,定量检出限分别为0.0012%、0.0016%、0.0020%、0.0025%、0.0013%和0.0025%。按照实验方法测定5个粗二氧化碲样品中铜、铅、锑、铋、砷和硒,测定结果的相对标准偏差(RSD,n=7)为0.79%~4.8%,加标回收率为96.0%~103%。方法简单,精密度和准确度较高,可用于测定粗二氧化碲中铜、铅、砷、锑、铋、硒含量。     

Isobaric analogue resonances in71As through proton elastic scattering on70Ge

The analogues of the low-lying levels in⁷¹Ge have been observed as resonances in the compound nucleus⁷¹As through proton elastic scattering on⁷⁰Ge in the energy rangeE _p=3.5 to 5.3 MeV. The excitation functions cover the analogue resonances corresponding to states upto 2.3 MeV excitation in⁷¹Ge. The sub-structures in the 5.06 MeV resonance, first observed by Temmer and co-workers have been confirmed in the present experiment. The present investigation reveals similar sub-structures in the 4.13 MeV resonance lending further support to the existence of intermediate structure near an isobaric analogue resonance. The resonance parameters and the spectroscopic factors (for the corresponding parent states) have been extracted. The results are compared with the information available from the⁷⁰Ge(d, p)⁷¹Ge reaction.