一维光子晶体微腔在硅基材料发光中的应用研究

硅基材料的高效发光对未来硅基光电子集成的发展极其关键,含微腔的一维光子晶体可以显著提高其发光强度、窄化其发光峰.介绍了几种硅基材料发光的一维光子晶体微腔结构,包括单缺陷模式的对称与非对称结构、多缺陷模结构及电注入结构.利用传输矩阵法计算其缺陷模透射谱,以间接分析其发光谱.     

基于丝网印刷技术的碳纳米管场发射冷阴极制作

制备了一种新型碳纳米管浆料,并总结了一套阴极制作工艺.实验表明,质量比约为10%的纯化碳纳米管、5%的纳米金属粉末和有机材料混合形成的印刷浆料,其阴极具有较好的发射均匀特性.在浆料制备过程中通过加入表面活性剂使碳纳米管分散更加均匀.用丝网印刷技术制作阴极,并用机械刀刻的办法制作阴、栅两极之间的沟槽,经烧结后分析阴极膜的电阻率和粘附性随阴极材料组分和制作工艺的变化关系,确定较为合适的升温曲线及丝网目数,阴极碳纳米管的均匀性、导电性的提高改善了发射均匀性.该阴极开启场为2.5 V/μm,在电场强度为3.3 V/μm下,阳极电流为5.6 μA,场发射电流稳定,波动小于5%.     

负折射介质中可控自陡峭效应对孤子传输的影响

研究了具有非线性极化的负折射介质中孤子脉冲的传输特性,着重分析了在常规非线性传输模型中不曾出现的由负折射介质色散磁导率导致的可控自陡峭效应对孤子传输的影响.结果表明,与正自陡峭效应一样,负自陡峭效应同样造成孤子脉冲的非对称、中心偏移和高阶孤子衰减,但脉冲偏移的方向与正自陡峭效应情形相反.此外,利用可控自陡峭效应可以从某种程度上抵消三阶色散效应导致的孤子脉冲偏移,从而实现孤子脉冲中心的无偏移传输.     

三波长宽角度消偏振平板分光膜的设计

分光膜都是倾斜使用的,不可避免地存在S和P 2个偏振分量的分离。在许多实际应用中,这是一个迫切需要解决的刺手难题。基于Thelen和Costich理论,选择初始膜系材料和结构,并在Needle合成法与Conjugate graduate精炼法的帮助下,采用全介质材料设计了532nm,633nm和1315nm三波长宽角度消偏振平板型分光膜,空气中入射角的变化范围为45°±5°。结果表明：在宽角度范围内,此膜系在(532±10)nm,(633±10)nm和(1315±10)nm范围的偏振分离都能比较好地满足消偏振要求。     

左手介质椭圆光波导基模传播特性

在椭圆柱坐标系中,采用分离变量方法,得出了左手介质椭圆光波导本征方程的近似解,通过数值计算,分析了椭圆波导偏心率、左手介质的电容率、磁导率对椭圆光波导基模传播特性的影响,并将左介质光波导与右手介质光波导基模特性进行对比,得出左手介质光波导的基模特性与右手介质光波导基模特性差别不大的结论.     

Magnetic properties of YCo5 (70%wt)+Y2Co17 (30%wt) nanocomposite powders at low temperatures

Nanostructured YCo₅ (70%wt)+Y₂Co₁₇ (30%wt) composite powders were prepared by mechanical milling and subsequent annealing at 1073 K for 1.5 min. The average grain size D of the YCo₅ and Y₂Co₁₇ phases, obtained from XRD data, was 14 and 12 nm, respectively. The temperature dependence of the magnetic properties was studied by DC magnetization measurements at temperatures T ranging from 3 to 300 K. Hysteresis loops (H_max=70 kOe) show that both the coercivity H_C and the squareness σ_r/σ_max are temperature-dependent. The coercivity increases from 12 kOe at room temperature to 18 kOe at T=3 K. The observed enhanced remanence (σ_r/σ_max>0.5) indicates that a strong exchange coupling is present at all temperatures used in this study. The maximum magnetization σ_max changes little with temperature and has a value of about 70% of the effective saturation magnetization of the title compound.     

InxGa1-xN薄膜的弯曲因子及斯托克斯移动研究

采用常压金属有机化学汽相沉积(MOCVD)技术以Al2O3为衬底在GaN膜上生长了InxGa1-xN薄膜。以卢瑟福背散射／沟道技术、光透射谱、光致发光光谱对InxGa1-xN／GaN／AI2O3样品进行了测试。研究了InxGa1-xN薄膜的弯曲因子及斯托克斯移动。结果表明，采用光透射谱、光致发光光谱得到的InxGa1-xN薄膜的禁带宽度一致，InxGa1-xN薄膜并不存在斯托克斯移动。InxGa1-xN薄膜的In组分分别为0．04，0．06，0．24，0．26时，其弯曲因子分别为3．40,2．36，1．82，3．70。随In组分变化。InxGa1-xN薄膜的弯曲因子的变化并没有一定的规律，表明InxGa1-xN薄膜的禁带宽度随In组分的变化关系复杂。     

The visible and ultraviolet organic light-emitting diodes with germanium dioxide as facile solution-processed anode buffer layer

Germanium dioxide (GeO₂) aqueous solutions are facilely prepared and the corresponding anode buffer layers (ABLs) with solution process are demonstrated. Atomic force microscopy, X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy measurements show that solution-processed GeO₂ behaves superior film morphology and enhanced work function. Using GeO₂ as ABL of organic light-emitting diodes (OLEDs), the visible device with tris(8-hydroxy-quinolinato)aluminium as emitter gives maximum luminous efficiency of 6.5 cd/A and power efficiency of 3.5 lm/W, the ultraviolet device with 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole as emitter exhibits short-wavelength emission with peak of 376 nm, full-width at half-maximum of 42 nm, maximum radiance of 3.36 mW/cm² and external quantum efficiency of 1.5%. The performances are almost comparable to the counterparts with poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) as ABL. The current, impedance, phase and capacitance as a function of voltage characteristics elucidate that the GeO₂ ABL formed from appropriate concentration of GeO₂ aqueous solution favors hole injection enhancement and accordingly promoting device performance.     

Controlling the stability and the electronic structure of transition metal dichalcogenide single layer under chemical doping

By means of ab initio calculation based on density-functional theory (DFT), we have investigated the electronic and optical properties of single layer MoSe₂ under chemical doping by various groups, such as ?H, ?OH, ?NH₂ and ?CH₃. This work is generalized for all polymorph 1H, 1T, 1T′ and the new investigated phase 1T″. We found that all those functional groups (FG) bonded covalently to the chalcogen atom (Se). The evaluation of adsorption energy shows that the hydrogen atom binds more strongly than other functional groups in particular with the T phase. Furthermore, the attachment of functional groups to T-MoSe₂ leads to dramatic changes to the structure stability and the optoelectronic properties of the material by tuning its band gap from metallic to a semiconductor. Also, we found that the band gap is strongly depending on the type and the densities of dopants.     

复合材料弹侵彻混凝土靶的研究

 利用碳纤维复合材料壳体和金属弹头组成的复合弹体,对混凝土靶进行了高速侵彻实验,弹体分别以336、447和517 m/s的速度对强度为30 MPa、厚度为200 mm的混凝土靶进行正侵彻和30°斜侵彻。实验结果表明：碳纤维复合材料壳体具有较高的强度,在高速侵彻靶体的过程中弹体结构能够保持完整,复合材料壳体没有纤维分层和断裂产生。相对于同样结构尺寸的金属弹体（将复合材料壳体替换为密度7.8 g/cm³的金属材料）,复合材料弹填充物的质量分数（18.5%）约为金属弹体的两倍,因此采用轻质高强复合材料替代高密度金属弹身,不仅可以提高弹体装填比、增加比毁伤威力,而且还具有较高的侵彻能力。