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81.
This paper reports that the m-plane GaN layer is grown on (200)-plane LiAlO2 substrate by metal-organic chemical wpour deposition (MOCVD) method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer's thickness. The high transmittance (80%), sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate. 相似文献
82.
All-optical frequency multiplication/recovery based on a semiconductor optical amplifier ring cavity
Fei Wang 《Optics Communications》2006,257(2):334-339
A novel scheme for all-optical frequency multiplication/recovery based on a semiconductor optical amplifier ring cavity is proposed and investigated numerically. The results show, for a 2.5 GHz driving pulse train, it can be generated 5-25 GHz repetition rate pulse trains with low clock amplitude jitter, polarization independence and high peak power. Furthermore, the extraction of the clock signal from a pseudorandom bit sequence signal can be realized based on the proposed scheme. 相似文献
83.
84.
M. Brando N. Büttgen V. Fritsch J. Hemberger H. Kaps H.-A. Krug von Nidda M. Nicklas K. Pucher W. Trinkl A. Loidl E.W. Scheidt M. Klemm S. Horn 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,25(3):289-298
We present susceptibility, microwave resistivity, NMR and heat-capacity results for Li1-xZnx(V1-yTiy)2O4 with 0 ?
x
? 0.3 and 0 ?
y
? 0.3. For all doping levels the susceptibility curves can be fitted with a Curie-Weiss law. The paramagnetic Curie-Weiss temperatures
remain negative with an average value close to that of the pure compound Θ≈ - 36 K. Spin-glass anomalies are observed in the susceptibility, heat-capacity and NMR measurements for both type of dopants.
From the temperature dependence of the spin-lattice relaxation rate we found critical-dynamic behavior in the Zn doped compounds
at the freezing temperatures. For the Ti-doped samples two successive freezing transitions into disordered low-temperature
states can be detected. The temperature dependence of the heat capacity for Zn-doped compounds does not resemble that of canonical
spin glasses and only a small fraction of the total vanadium entropy is frozen at the spin-glass transitions. For pure LiV2O4 the spin-glass transition is completely suppressed. The temperature dependence of the heat capacity for LiV2O4 can be described using a nuclear Schottky contribution and the non-Fermi liquid model, appropriate for a system close to
a spin-glass quantum critical point. Finally an (
x
/
y
,
T
)-phase diagram for the low-doping regime is presented.
Received 16 March 2001 and Received in final form 30 October 2001 相似文献
85.
We analyze the effect of co-segregation on the mobility of grain boundaries within the framework of the impurity drag theory originally proposed by Cahn and Lücke and Stüwe for an ideal solution. The new derivation extends this model to the case where there are two types of impurities (or three components in the alloy). Since the resultant expression for the boundary mobility is complicated, numerical solutions were obtained for several cases to show how co-segregation affects the boundary mobility. Depending on the relative diffusivities of the two impurities which are both attracted to the boundary, the mobility may either increase or decrease with increasing concentration of one of the impurities. When one of the impurities is attracted to the boundary and the other repelled from the boundary, increasing the concentration of the attractive impurity can lead to a sharp decrease in the boundary mobility. 相似文献
86.
电子自旋是原子物理学和量子力学的重要概念,电子自旋假说的产生在物理学史上具有一定的特殊性,该文系统论述了电子自旋假说提出了与被物理学界接受的历史,并从荷兰莱顿理论物理研究的学术环境、乌仑贝克和哥德斯密“理论型”与实验型”的互补、艾仑费斯行的教育艺术等方面分析了其历史经验。 相似文献
87.
Chemical bonding in isolated molecules and crystals of zwitterionic pentacoordinate silicon chelates
The electronic structures of a number of zwitterionic pentacoordinate silicon chelates were investigated using the results of X-ray diffraction studies and quantum-chemical calculatoins by the MPW1PW91/6-311G(d) method. The topological analysis of the electron density distribution function and the study in the framework of the natural bond orbital partitioning scheme showed that the character of chemical bonding in the axial fragments of the molecules under consideration changes from dative to three-center, four-electron as the silicon atom assumes a trigonal-bipyramidal coordination. 相似文献
88.
D. Yafaev 《Proceedings Mathematical Sciences》2002,112(1):245-255
We find an explicit function approximating at high energies the kernel of the scattering matrix with arbitrary accuracy. Moreover,
the same function gives all diagonal singularities of the kernel of the scattering matrix in the angular variables.
This paper is dedicated to Jean-Michel Combes on the occasion of his sixtieth birthday. 相似文献
89.
基于同步辐射加速器的康普顿背散射γ射线源(Ⅰ)产生MeV量级γ光子的数值计算 总被引:1,自引:0,他引:1
提出在筹建的上海同步辐射装置上建造一条MeV量级γ射线束及应用站,采用μm波长的红外(或远红外)激光与储存环中3.5GeV电子束进行康普顿背散射,从而获得能区为1—25MeV的康普顿背散射γ光子束,该光子束具有高强度、高极化度(线和圆极化)、准单色、方向性好的优点,可以广泛地应用于核物理和核天体物理基础研究及相关的应用研究领域.介绍了康普顿背散射的基本原理,并结合储存环参数给出了光子束性能的数值计算结果. 相似文献
90.
强流脉冲电子束在材料中的能量沉积剖面、能量沉积系数和束流传输系数受其入射角的影响很大,理论计算了0.5~2.0MeV的电子束以不同的入射角在Al材料中的能量沉积剖面和能量沉积系数,并且还计算了0.4~1.4MeV电子束以不同入射角穿透不同厚度C靶的束流传输系数。计算结果表明,随着入射角的增大,靶材表面层单位质量中沉积的能量增大,电子在靶材料中穿透深度减小,能量沉积系数减小,相应的束流传输系数也减小;能量为0.5~2.0MeV的电子束当入射角在60°~70°时在材料表面层单位质量中沉积的能量较大。 相似文献