基于铰链式六面顶压机的二级6-8模超高压大腔体内置加热元件的设计与温度标定

 首次报道了一种新型的基于铰链式六面顶压机的二级6-8模大腔体静高压装置的内置加热元件的设计与温度标定。此加热组装结构简单,升温快,保温效果好,并有效地解决了国外基于两面顶压机构架下的二级6-8模内加热组装中热电偶在施加压力时易断的问题。以低成本的碳管为加热元件,采用直接和间接两种加热方式,用双铂铑（Pt6%Rh-Pt30%Rt）B型热电偶进行温度测量,并根据实验过程中加热功率与腔内实际温度的关系,对不同压力下腔体内的温度进行了标定。实验结果表明：此加热系统的油压达到40 MPa（腔体压力约10 GPa）时,温度可以达到1 700 ℃以上;在油压为30 MPa、样品室温度为1 000 ℃时,保温时间可达2 h,甚至更长;实验中获得样品的直径可达3 mm,高度可达7 mm,实现了在高温超高压条件下大样品的制备,满足了实验对产生高温超高压条件的需要。     

Interface states in Al_2O_3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor(MOS) structures. Two types of device structures, namely, the recessed gate structure(RGS) and the normal gate structure(NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ETin both devices have been determined. Furthermore,the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching(RIE).     

防空反导高能激光武器

概述了防空反导高能激光武器的技术现状,包括地基防空反导激光武器系统和机载激光制导防空反导激光武器系统的组成、技术难点及发展趋势。介绍了天基和空基激光反导武器系统的组成及功能,并对其主要技术性能和关键技术进行了分析。     

强激光干扰下运动目标热损伤效应的有限元研究

为对空中飞行目标实施合理有效的强激光干扰,需要综合考虑采用的干扰方式、干扰效果以及考虑光斑偏移对干扰效果的影响。以热传导理论为基础,建立了激光辐照下移动目标温度场模型,采用伽辽金法建立了有限元分析模型,采用了等效比热容的方法处理材料的相变过程;并以Ansys软件为仿真平台,对目标在高斯分布的强激光作用下的温度场和热应力进行了综合仿真分析。结果表明,光斑与目标辐照区域的相对偏移对目标表面温度影响较大,对目标纵深破坏效应相对较小,应力变化主要发生在激光辐照区域,应力最大处也会随热源的移动而变化。     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

First-principle studies on the electronic structure of Fe3O4(110) surface

The first-principle was employed to study the six possible models for the Fe₃O₄(110) surface, namely the AB-terminated surface (AB model), the AB-terminated with Fe_A vacancy (AB-Fe_A vac model), the AB-terminated with Fe_B vacancy (AB-Fe_B vac model), the B-terminated surface (B model), the B-terminated surface with Fe_B vacancy (B-Fe_B vac model) and the B-terminated surface with O vacancy (B-O vac model). The stability, the electronic structure and the magnetic properties of the six surface models were also calculated. The results predict that the B-O vac model is more stable than other types of surface models. The half-metallic property remain in the AB and B models, while the other four surface models exhibit metallic properties. At the same time, the AB, AB-Fe_A vac, AB-Fe_B vac, B and the B-Fe_B vac models have ferrimagnetic properties, while the B-O vac model has antiferromagnetic property.      

The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress

Step-stress experiments are performed in this paper to investigate the degradation mechanism of an AlGaN/GaN high electron mobility transistor(HEMT).It is found that the stress current shows a recoverable decrease during each voltage step and there is a critical voltage beyond which the stress current starts to increase sharply in our experiments.We postulate that defects may be randomly induced within the AlGaN barrier by the high electric field during each voltage step.But once the critical voltage is reached,the trap concentration will increase sharply due to the inverse piezoelectric effect.A leakage path may be introduced by excessive defect,and this may result in the permanent degradation of the AlGaN/GaN HEMT.     

基于FPGA的超高速线阵CCD信号采集系统的设计与实现

线阵CCD已广泛应用于在线检测、图像识别等系统,目前高帧率采集系统多在200~500Hz之间。高速线阵CCD采集系统,如1K甚至10KHz以上的采集要求,设计难度大,电路实现复杂,需要专用处理器,产品成本高,提出了一种采用并行高速FPGA驱动线阵CCD,通过常规分立元件完成模拟信号处理,实现数字信号实时传输的方案。该方案不仅简化了硬件设计上的难度,在同等性能情况下,可实现每秒万帧的高速采样,大幅度降低了成本。方案选用Altera FPGA作为控制核心,实现高速信号采集的同时,在片上实现一定的图像算法,不仅加速了图像处理速度,同时降低了计算机的处理压力。最后,本电路通过USB2.0接口,完成数据的实时传输。设计具有高帧率、高灵敏度、性能稳定,便携使用等特点,同时还有一定的通用性,已应用于一些光学系统中。     

金刚石对顶砧原位电导率测量系统

 在金刚石对顶砧中进行原位高温高压电阻测量时,由于受到绝热层的限制,从而达不到理想的温度条件。采用普通的粉末绝热材料,会给电极的引入造成很大困难,而且不规则的电阻丝使电阻测量很难精确量化。利用溅射镀膜方法,在对顶砧的砧面上镀氧化铝膜作绝热层,溅射的金属钼膜作电极材料,成功地完成了高温高压条件下原位电阻的测量。利用此装置,测量了铁镁硅酸盐(Mg_0.875,Fe_0.125)₂SiO₄在高温高压环境下（31~35 GPa,1 500~3 400 K）的电导率,得到了样品的导电粒子激活能,发现其激活能随着压强的升高而增大,与低压低温（小于15 GPa,低于1 200 K）条件相比,其激活体积和激活能都明显减小。     

Enhancement of photosensitivity in bismuth doped Cu2ZnSnS4 thin films

In this paper, the effect of bismuth doping on the structural, morphological, optical and electrical properties of Cu₂ZnSnS₄ (CZTS) films has been investigated. The undoped and bismuth doped CZTS films (0, 0.5, 1, 1.5 and 2 mol%) were deposited on glass substrates by solution based method. The XRD result shows a significant improvement in the crystallinity of the films with increase in bismuth concentration. The Raman spectra of the films show the dominant peak at 334 cm^–1 corresponding to A₁ vibrational mode of CZTS kesterite phase. The FESEM micrographs of the films show an enhancement in the grain size and densification with the addition of bismuth ion concentration. The optical bandgap of the films was found to vary (1.59–1.40 eV) with the doping of bismuth ions. The I –V characteristics indicate twofold increment in the photoconductivity for the bismuth doped CZTS films under 100 mW/cm² illumination suggesting their potential application in photovoltaic devices. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)