In∶Nd∶LiNbO3晶体倍频性能的研究

在 LiNbO₃中掺进In₂O₃和Nd₂O₃, 以Czochralski技术生长了In∶Nd∶LiNO₃晶体. 通过光斑畸变法测得In∶Nd∶LiNbO₃晶体的光损伤阈值为1.98×104 W/cm², 比Nd∶LiNbO₃晶体的1.6×102 W/cm²高两个数量级以上;晶体吸收光谱的测试表明, In∶Nd∶LiNbO₃晶体的吸收边相对Nd∶LiNbO₃晶体发生紫移. 研究了In∶Nd∶LiNbO₃晶体的倍频性能, 结果表明, In∶Nd∶LiNbO₃晶体的相位匹配温度在室温附近, 倍频转换效率比Nd∶LiNbO₃晶体提高二倍.     

高功率Cr,Tm,Ho∶YAG激光器的实验研究

在医学应用上,Cr,Tm,Ho∶YAG激光器需要在大功率、高重频下工作。合理的设计对提高Cr,Tm,Ho∶YAG激光器的输出功率是很重要的。通过对Cr,Tm,Ho∶YAG输出特性进行理论分析和实验验证可知,腔长、全反射镜曲率半径、输出镜透过率、水温等因素对Cr,Tm,Ho∶YAG激光器的输出功率均有影响。提出了优化设计Cr,Tm,Ho∶YAG激光器的方法。在镀银腔情况下,当重频为10Hz时,激光阈值为45J,斜效率为1.1%;当输入能量为121J时,输出的平均功率为9.7W。在陶瓷聚光腔情况下,当重频为10Hz时,激光阈值为40J,斜效率为2.7%;当输入能量为100J时,输出的平均功率为16.2W。     

激光二极管直接耦合泵浦的高效率Nd：YVO4／KTP腔内倍频激光器

使激光二极管的发光光面紧贴Ｎｄ：ＹＶＯ４激光晶体，“面对面”直接耦合泵浦，采用ＫＴＰ晶体腔内倍频，在５０３ｍＷ的泵浦功率下，获得５３２ｎｍ基横模绿光输出约７３ｍＷ，光光总体转换效率为１４．５％。     

Interwell excitons in GaAs superlattices

The formation of spatially indirect excitons in superlattices with narrow minibands is investigated experimentally. The interwell exciton is similar to the first Wannier–Stark localized exciton of an electrically biased superlattice. However, in the present case the localization is mediated by the Coulomb interaction of the electron and the hole without external fields.     

激光二极管泵浦Nd∶Sr_5(VO_4)_3F激光器的输出特性研究

分析了Ｎｄ∶ＳＶＡＰ晶体在Ｘ（ａ）－轴和Ｙ－轴不同切割情况下的偏振吸收和荧光谱，并对沿不同方向切割样品的激光特性进行了研究。发现沿Ｘ轴方向切割样品的荧光谱的偏振度为４．４１，而沿Ｙ轴方向切割样品的偏振度为２．１８。并且，沿Ｘ轴方向切割样品的π偏振荧光谱的强度是沿Ｙ轴切割样品的１．７倍。还报道了对激光器输出中心波长与泵浦功率大小的关系以及输出功率的大小与激光晶体温度关系的研究结果     

AC losses and stability on large cable-in-conduit superconductors

The cable-in-conduit superconductors are preferred for applications where the AC losses and stability are a major concern, e.g., fusion magnets and SMES. A review of coupling currents loss results for both NbTi and Nb₃Sn cable-in-conduit conductors (CICC) is presented and the AC loss relevant features are listed, with special emphasis for the role of the interstrand resistance and strand coating. The transient stability approach for CICCs is discussed and the analytical models are quoted as well as the relevant experimental database. The likely spectrum of transient disturbance in CICC is reviewed and the need to account for interstrand current sharing in the design is outlined. Eventually a practical criterion for the interstrand resistance is proposed to link the stability and AC loss design.     

Electro-optical phenomena accompanying electron and hole heating in superlattices and quantum wells GaAs/AlGaAs and Ge/GeSi

New electro-optical phenomena in quantum-well structures, i.e. modulation of the light absorption and birefringence due to carrier heating in a strong electric field, have been investigated. The effects have revealed different features in the three types of structures under investigation, namely: (1) well-dopedn-type GaAs/AlGaAs multiple quantum wells, (2) barrier-dopedn-type GaAs/AlGaAs superlattices and (3) barrier-dopedp-type Ge/GeSi multiple quantum wells. Possible mechanisms of the phenomena have been discussed.     

Determination of As,Bi, Sb and Sn in conifer needles from various locations in Poland and Norway by hydride generation inductively coupled plasma atomic emission spectrometry

Hydride generation inductively coupled plasma atomic emission spectrometry (HG-ICP-AES) in the system with aerosolised sample introduction has been employed for the first time for analysis of conifer needles. Arsenic, bismuth, antimony and tin along with other trace elements were simultaneously determined in pine, spruce, yew and thuja foliage sampled from various locations in Poland and Norway. Quality of the measurements was assured by examination of two attested plant reference materials. The application of different analyte introduction techniques and interference effects from matrix elements, i.e. Na, K, Mg, Ca and transition metals in the analysis of needles are discussed.     

X‐Ray Investigations of the intrinsic Carbon‐Incorporation during the MOVPE Growth of AlxGa1‐xAs

We have investigated the intrinsic C‐incorporation during the metalorganic vapour‐phase epitaxy of GaAs, (Al,Ga)As, and AlAs. The carbon from the methyl radicals of trimethylgallium and trimethylaluminium has been used as intrinsic carbon source and the necessary growth conditions (low growth temperatures and low V/III‐ratios) have been determined. Under these conditions we observed a reduction of the Al‐incorporation in (Al,Ga)As resulting from a change of surface kinetics at low temperatures. We have used the tensile tetragonal lattice distortion due to the C‐incorporation for determination of the carbon concentration. This has been done by investigating the symmetric (004) reflection peaks of GaAs and the strained epitaxial layer by high resolution x‐ray diffraction. The resulting carbon concentrations showed a good agreement with the hole concentrations determined by Hall measurements and spectroscopic ellipsometry.