The Meaning and Use of the Arrhenius Activation Energy

The nature of the Arrhenius activation energy and frequency factor is reexamined in terms of information now becoming available on the microscopic aspects of collisional reactions. It is pointed out that the activation energy is not generally equal to the threshold for reaction, and its correct conceptual meaning is discussed. The temperature dependence of this quantity and its relation to the threshold energy is developed for a number of representative forms of the energy dependence of the reaction cross-section (excitation function). The uses and limitations of the activation energy as a means of evaluating thresholds, excitation functions, and the presence of tunneling processes are discussed.     

热塑性聚酰亚胺与聚醚醚酮共混物的等温结晶动力学

采用熔融共混方法制备了热塑性聚酰亚胺(TPI)与聚醚醚酮(PEEK)的共混物; 用示差扫描量热分析(DSC)研究了共混物的等温结晶动力学. 分别采用Avrami方程和Hoffman-Lauritzen方程分析共混物的等温结晶动力学、端表面自由能(σe)和分子链折叠功(q). 结果表明, 加入TPI后PEEK的结晶速率降低, 结晶活化能、σe和q均增加. 但这些数值的变化与TPI含量不呈线性关系, 并从共混物的相容性和表面形貌给出了可能的解释.     

MgH2+20%(w)MgTiO3复合材料的吸/放氢性能

为了降低MgH₂的吸放氢温度, 提高其吸放氢动力学性能, 本文通过球磨方法制备了MgH₂+20%(w)MgTiO₃复合储氢材料, 并研究了其储氢性能. X射线衍射(XRD)结果表明, MgTiO₃在与MgH₂球磨过程中生成Mg₂TiO₄和TiO₂, 并且Mg₂TiO₄和TiO₂在体系的吸放氢过程中保持稳定, 能够对MgH₂的吸放氢过程产生催化作用. 程序升温脱附和吸/放氢动力学测试结果表明, 添加MgTiO₃后MgH₂的初始放氢温度从389 ℃降至249 ℃.150 ℃下的吸氢量从0.977%(w)提高到2.902%(w), 350 ℃下的放氢量从2.319%(w)提高到3.653%(w). 同时, MgH₂放氢反应的活化能从116 kJ·mol^-1降至95.7 kJ·mol^-1. 与MgH₂相比, MgH₂+20%(w) MgTiO₃复合材料的热力学与动力学性能均有显著提高, 这主要是由于球磨和放氢过程中原位生成的TiO₂和Mg₂TiO₄具有良好的催化活性.     

两种量热模式下物质热分解的动力学补偿效应

热分析量热仪主要包括动态、等温、恒温及绝热四种操作模式。很多学者基于动态及等温模式的测试结果,采用Arrhenius速率常数进行动力学计算,进而发现了所谓的“动力学补偿效应”。为了解绝热模式下是否也存在动力学补偿效应,分别采用绝热加速量热法(ARC)及动态差示扫描量热法(DSC)研究了过氧化二异丙苯(DCP)、40%(质量分数,下同)DCP溶液、葡萄糖、45%葡萄糖溶液的热分解特性,在此基础上基于Arrhenius公式计算了对应的表观活化能E和指前因子A,并对计算结果进行了分析。结果表明:绝热模式下,不同质量的同种样品及其溶液的最佳动力学参数,或者同一组数据采用不同的反应级数获得的lnA和E之间均存在明显的线性关系。此外,尽管由动态DSC数据计算获得的E和lnA普遍小于绝热模式的结果,但两种模式下获得的lnA和E之间仍然存在动力学补偿效应。由此可以推断,具有相同或类似反应机理的反应,虽然实验模式不同,但其E和lnA之间存在明显的动力学补偿效应。     

界面裂纹问题的解析—变分解法及其在复合材料盖板胶接件中的应用

本文根据穆斯海里什维利求解各向同性平面问题与列赫尼兹基求解各向异性平面问题的广义复变函数理论与本征函数展开法,分析了复合材料盖板胶接件的分层问题,得到了精确满足所有基本方程、裂纹表面边界条件与层间连续条件的位移场与应力场本征展开式.进而利用分区广义变分原理满足裂纹表面以外的边界条件并由此确定应力强度因子.     

Energy levels in doped SiGe quantum well studied by admittance spectroscopy

SiGe/Si quantum wells (QWs) with different Boron doping concentrations were grown by molecular beam epitaxy (MBE) on p-type Si(1 0 0) substrate. The activation energies of the heavily holes in ground states of QWs, which correspond to the energy differences between the heavy hole ground states and Si valence band, were measured by admittance spectroscopy. It is found that the activation energy in a heavily doped QW increases with doping concentration, which can be understood by the band alignment changes due to the doping in the QWs. Also, it is found that the activation energy in a QW with a doping concentration of 2 × 10²⁰ cm⁻³ becomes larger after annealing at a temperature of 685 °C, which is attributed to more Boron atoms activation in the QW by annealing.     

NO dissociation pathways on Rh(1 0 0), (1 1 0), and (1 1 1) surfaces: A comparative density functional theory study

The chemisorption and dissociation pathways of NO on the Rh(1 0 0), (1 1 0), and (1 1 1) surfaces are studied by the plane-wave density functional theory (DFT) with CASTEP program. In addition, the electronic and geometrical effects that affect the NO dissociation reactions have been investigated in detail. The calculation results are presented as following: The effective activation energies of the best NO dissociation pathways on the Rh(1 0 0), the Rh(1 1 0), and the Rh(1 1 1) are 0.63, 0.66 and 1.77 eV, respectively. The activity of the Rh planes for NO dissociation is in the order of Rh(1 0 0) ≈ Rh(1 1 0) > Rh(1 1 1). The low dissociation barrier for Rh(1 0 0) and Rh(1 1 0) is associated with the existence of a lying-down NO structure which acts as a precursor for dissociation. By Mulliken population analysis and structure analysis, both electronic and geometrical effects are found to affect the NO dissociation reactions, but the geometrical effect exceed the electronic. The energy decomposition scheme has been used to provide further insight into the NO dissociation reactions. Based on the calculations, the interaction energy between N and O in the transition state on the Rh(1 1 1) is found much larger than that on the Rh(1 0 0) and the Rh(1 1 0). The major differences of should originate from the variation of the bonding competition effect.     

关于二级相变中热力学物理量突变的分析与自旋链模拟

理论上对二级相变中热容、体膨胀系数、等温压缩系数三个热力学物理量的变化进行了分析,进而使用自旋链模型的基态能量和von Neumann熵随模型参数变化的突变行为对二级相变中这三个物理量的变化所引起的系统序变进行模拟,得到二级相变中热容、体膨胀系数、等温压缩系数的变化是由于系统内部微观上发生关联序变的结果。     

撞击诱导硝基甲烷分子第一步分解反应的动力学计算

本文基于分子温度与压强的关系,计算在不同压强下基态和最低三态硝基甲烷的分子温度,对应计算其沿着CN键裂解反应的热化学和动力学参数.发现基态的硝基甲烷沿着CN键的分解反应是吸热反应,不具自发性,反应转换温度为1550.2 K,平衡常数在80-1202 K温度范围内很低.最低三态的硝基甲烷沿着CN键的裂解是放热反应,反应的Gibbs自由能在80-2558.5 K范围内为负,有好的自发性,且反应较为彻底.298.15-2558.5 K温度范围内反应活化能随着温度的升高而改变,使反应速率随着温度的升高而急剧增大.对应硝基甲烷爆压15 GPa,其分子温度为4617.6 K,该温度下三态分子分解反应的反应速率为1.088×10~8cm~3·mol~(-1)·s~(-1).推算硝基甲烷沿着CN键分解反应混合物的终态温度,当混合物为硝基、甲基和基态的硝基甲烷分子时,反应的终温为1611.37 K,等效能为1676.47 cm~(-1).当混合物为硝基、甲基、基态和最低三态的硝基甲烷分子时,反应的终温为1184.79 K,等效能为1232.65 cm~(-1).两种情况下终态等效能都足以维持硝基甲烷分子沿C-N键裂解反应的发生.这个能量也足以导致混合物中的NO_2分解为NO和O,这与实验检测的结论相一致.     

The effect of oxygen vacancy on the oxide ion mobility in LaAlO3-based oxides

The electrical property of (La_1−xSr_x)_1−z(Al_1−yMg_y)O_3−δ (LSAM; x≤0.3, y≤0.15 and z≤0.1) was measured using the DC four-probe method as a function of temperature (500–1000°C) and oxygen partial pressure (1–10⁻²² atm). Among LSAMs, (La_0.9Sr_0.1)AlO_3−δ showed the highest ionic conductivity, σ_i=1.3×10⁻² S cm⁻¹ at 900°C. A simultaneous substitution at A and B sites or A site deficiency is expected to create larger oxygen vacancy and higher ionic conductivity. However, it showed a negative effect. The effect of the vacancy increase did not effect monotonously the ionic conductivity. It was found that the concentration of oxygen vacancy, [V_O], influences not only the oxide ion conductivity, σ_i, but also the mobility, μ_v, of [V_O]. These properties exhibit a maximum at around [V_O]=0.05. With the increase in [V_O], the activation energy, E_a, of the ionic conduction dropped from 1.8 to ca. 1.0 eV at [V_O]=0.05 and became almost constant at [V_O]>0.05. The dependency of the pre-exponential term, μ⁰_v, and E_a on [V_O] was analyzed and their effect on μ_v and σ_i was discussed with respect to crystal structure and defect association. It was estimated that the crystal structure mainly governs these properties. The effect of defect association could not be ignored but is considered to be a complicated correlation.