相位—啁啾调控对高次谐波光谱的影响

理论研究了在激光相位和啁啾调控共同影响下高次谐波光谱的变化。结果表明：当激光相位为0时,一阶啁啾调控使谐波能量延伸。二阶啁啾调控会呈现高强度谐波平台区。当激光相位为0.5π时,一阶啁啾调控可以获得连续平台区,但是强度较弱。在二阶啁啾调控下,谐波能量得到明显增大。通过谐波时频分析给出了不同激光波形下产生高次谐波光谱的原因。     

基于频率调制激光驱动的囚禁离子几何相位逻辑门

为了避免激光相位的起伏对几何相位逻辑门保真度的影响, 提出一种基于囚禁离子的量子几何相位逻辑门的新方案。该机制是利用一束频率调制的行波激光场作用于两个囚禁离子上实现的。它的优点有：操作简单,仅需一步就能实现。不灵敏于激光场的相位也不需要对囚禁离子进行个别寻址。     

Two localized CO2 laser treatment methods for mitigation of UV damage growth in fused silica

Two methods：high-power,short-time,single-shot irradiation（Method A） and low-power,long-time,multi-shot irradiation（Method B） are investigated to mitigate the UV damage growth in fused silica by using a 10.6-μm CO2 laser.To verify the mitigation effect of the two methods,the laser induced damage thresholds（LIDTs） of the mitigated sites are tested with a 355-nm,6.4-ns Nd：YAG laser,and the light modulation of the mitigation sites are tested with a 351-nm continuous Nd：YLF laser.The mitigated damaged sites treated with the two methods have almost the same LIDTs,which can recover to the level of pristine material.Compared with Method A,Method B produces mitigated sites with low crater depth and weak light modulation.In addition,there is no raised rim or re-deposited debris formed around the crater edge for Method B.Theoretical calculation is utilized to evaluate the central temperature of the CO2 laser beam irradiated zone and the radius of the crater.It is indicated that the calculated results are consistent with the experimental results.     

Photon counts modulation in optical time domain reflectometry

The quantum fluctuation of photon counting limits the field application of optical time domain reflection. A method of photon counts modulation optics time domain reflection with single photon detection at 1.55 μm is presented. The influence of quantum fluctuation can be effectively controlled by demodulation technology since quantum fluctuation shows a uniform distribution in the frequency domain. Combined with the changing of the integration time of the lock-in amplifier, the signal to noise ratio is significantly enhanced. Accordingly the signal to noise improvement ratio reaches 31.7 dB compared with the direct photon counting measurement.     

基于串行最小频移键控的8进制调制的研究

提出了一种新型的基于串行结构的最小频移键控调制技术,产生了相位连续,频谱宽度窄,每码元时间有两次π/2相移,类似于传统最小频移键控调制信号,给出了该调制方案的理论推导,并将其应用于8进制的多维多阶调制系统中。理论和仿真分析了不同的8进制调制方案在频谱特性,残留色散容限,自相位调制容限的不同,还分析了其受到系统滤波带宽的影响。最后仿真实现了通过350km的色散完全补偿的光纤120Gb/s的数据传输。     

温度对铌酸锂电光相位调制特性的影响

利用折射率椭球基本理论对线性电光效应进行了分析,对单轴晶体铌酸锂电光相位调制器的温度特性进行了研究。通过计算机进行数值模拟计算,分析了加电场时光通过LiNbO3电光调制器后出射光的相位变化与温度间的关系,得出在横向和纵向调制中温度对相位改变的影响。研究发现,无论在横向还是在纵向调制下,入射光偏振方向不同但其各自受温度影响的相位变化趋势大体一致,即随着晶体中温度的增加而增大。计算结果表明,LiNbO3电光调制的最佳使用方案为：电场沿x主轴方向施加,入射光偏振方向为感应主轴x’方向,且LiNbO3电光调制器粟用横向相位调制方式。     

Real-Time Reconfigurable Interconnections for Parallel Optical Processing

In this letter we describe the advantages of a dynamic optical interconnection system for parallel information processing applications. The system is based on a liquid crystal television which acts as a binary phase-only spatial light modulator. We describe example algorithms where reconfigurable interconnects would be useful and present results of several interconnection topologies which have been implemented.Presented at the International Commission for Optics Topical Meeting, Kyoto, 1994.     

空间振幅调制光谱偏振测量技术研究

空间振幅调制光谱偏振测量技术通过由光楔、偏振片组成的调制模块,将目标的偏振信息调制到与光谱维垂直的空间维,单次测量即可同时获取目标的偏振信息和光谱信息。首先阐述空间振幅调制光谱偏振测量技术的基本原理,然后利用空间调制光谱偏振仿真软件进行理论仿真,并且给出了具体的实验研究方案,通过对比理论模拟图像和实验图像,验证实验的可靠性。以Q=0,U=1,V=0和Q=1,U=0,V=0作为入射偏振光进行实验,在波长范围500～600 nm采样10组数据,利用最小二乘法对实验输出的偏振光进行偏振解调。结果表明：解调后入射光的线偏振度与参考入射光的误差值分别小于2.5%和4%,偏振角误差值小于1.8%和2%,验证了实验和算法的可行性,并对两组复合光楔中心误差对偏振测量的影响作了简要分析,结果表明中心误差对偏振分量Q和V的测量影响较大。     

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

高功率激光驱动器中小尺度自聚焦和噪声模型

 建立了一套线性的近似分析方法，研究高功率激光驱动器中强激光传输的小尺度自聚焦效应和相位噪声对光束传输和光束质量的影响，给出了系统噪声强度、B积分值与光束近场调制对比度之间的定量关系。研究表明,为保证输出光束质量，即近场调制对比度小于给定值，系统内的噪声强度必须符合一定的谱分布。