Growth kinetics of SiGe/Si superlattices on bulk and silicon-on-insulator substrates for multi-channel devices

We have studied in reduced pressure chemical vapor deposition the growth kinetics of Si and Si_0.8Ge_0.2 on bulk Si(0 0 1) and on silicon-on-insulator (145 nm buried oxide/20 nm Si over-layer) substrates. For this, we have grown at 650 °C, 20 Torr 19 periods (Si_0.8Ge_0.2 19 nm/Si 32 nm) superlattices on both types of substrates that we have studied in secondary ion mass spectrometry, X-ray diffraction and cross-sectional transmission electron microscopy. The Si and SiGe growth rates together with the Ge content are steady on bulk Si(0 0 1), with mean values around 9.5 nm min⁻¹ and 20.2%, respectively. In contrast, growth rates decrease from ∼9.5 nm min⁻¹ down to values around 7.0 nm min⁻¹ (SiGe) and 6.3 nm min⁻¹ (Si), when the deposited thickness on SOI increases from 0 up to slightly more than 100 nm. They then go back up to values around 8.8–9.0 nm min⁻¹ as the thickness increases from 100 up to 400 nm. They then slowly decrease to values around 8.4–8.6 nm min⁻¹ as the thickness increases from 400 up to 800 nm. The Ge concentration follows on SOI exactly the opposite trend: an increase from 19.9% (0 nm) up to 20.6% (∼100 nm) followed by a decrease to values around 20.1% (400 nm) then a slow re-increase up to 20.4% (800 nm). These fluctuations are most likely due to the following SOI surface temperature variations: from 650 °C down to 638 °C (100 nm), back up to 648 °C (400 nm) followed by a slow decrease to 646 °C (800 nm). These data curves will be most useful to grow on conventional SOI substrates large number of periods, regular Si/Si_0.8Ge_0.2 superlattices that will serve as the core of multi-channel or three-dimensional nano-wires field effect transistors.     

Growth velocity and the topography of Ni-Zn binary alloy electrodeposits

We show that the electrodeposition of Ni-Zn alloys at the lowest growth velocities, v < 0.5μm/s, exclusively proceeds from an abnormal co-deposition phenomenon. The growth process in this v region greatly depends on the initial [Co²⁺] concentration of the film deposition bath. A theoretical approach of this process including the role of the saturation surface roughness of the alloy, , leads to an estimation of the transport properties of the ad-atoms involved during the deposit formation. Their surface diffusion coefficient varying between 1.76×10^-10 and 2.40×10^-8 cm^-2/s exhibits a minimal value, D _s = 2.10×10^-10 cm^-2/s located between v = 0.17 and 0.35μm/s. The spatial scaling analysis of the local roughness, σ, examined according to the power-law σ≈L ^α reveals that the resulting roughness exponents concurs with the Kardar-Parisi-Zhang dynamics including the restricted surface diffusion. Two main v regions leads to different fractal textural features of the alloy film surface. Below 0.10 μm/s, the roughness exponent obtained is α≈ 0.6, depicting a limited ad-atom mobility. Over v = 0.30μm/s, this exponent stabilises at α≈ 0.82, indicating an increase of the surface diffusion. Received 16 August 2000 and Received in final form 20 June 2001     

A simple atomistic model for the simulation of the gel phase of lipid bilayers

In this paper we present the results of a large-scale numerical investigation of structural properties of a model of cell membrane, simulated as a bilayer of flexible molecules in vacuum. The study was performed by carrying out extensive Molecular Dynamics simulations, in the (NVE) micro-canonical ensemble, of two systems of different sizes ( 2×32 and 2×256 molecules), over a fairly large set of temperatures and densities, using parallel platforms and more standard serial computers. Depending on the dimension of the system, the dynamics was followed for physical times that go from few hundred picoseconds for the largest system to 5-10 nanoseconds for the smallest one. We find that the bilayer remains stable even in the absence of water and neglecting Coulomb interactions in the whole range of temperatures and densities we have investigated. The extension of the region of physical parameters that we have explored has allowed us to study significant points in the phase diagram of the bilayer and to expose marked structural changes as density and temperature are varied, which are interpreted as the system passing from a crystal to a gel phase. Received 6 July 2000 and Received in final form 28 December 2000     

Luminescence of different modifications of crystalline silicon dioxide: Stishovite and coesite

Luminescence of very small samples of single crystals of coesite and stishovite has been studied. The spectra were detected under ionizing radiation (X-ray and electron beam) and the decay kinetics of cathodoluminescence in the range of time from 10 ns to 3 ms was measured. The coesite luminescence possesses a broad band at 3 eV with exponential decay about 680 μs at 80 K. The nature of this luminescence was explained as a self-trapped exciton creation in tetrahedron framework. The stishovite luminescence possesses two bands—blue (2.8 eV) and UV (4.7 eV). The UV band intensity grows more than 20 times with irradiation dose from initial level. This shows that the corresponding luminescence centers could be induced by the radiation. The decay of the UV band possesses a fast and a slow component. The determination of the fast decay parameters is beyond the capabilities of our apparatus (less than 10 ns), whereas the slow decay of the UV is non-exponential and takes place in the range of hundreds of microsecond. The blue band decay kinetics can be well approximated by power law ∼t⁻², which may correspond to recombination of defects created by radiation. The stishovite single crystal luminescence is very similar to that of germanium dioxide single crystal of rutile structure. The nature of the stishovite luminescence is explained as recombination of defects created by irradiation in octahedron-structured lattice.     

Energy transport in silica to oxygen-deficient luminescence centers. Comparison with other luminescence centers in silica and α-quartz

The transport of energy absorbed by silica glass to oxygen-deficient luminescence centers in was studied in the range of intrinsic absorption from 8.2 up to 35 eV. The low efficiency of exciting those luminescence centers by transport of energy could not be ascribed merely to carrier scattering by the disordered structure. Other centers (Cu⁺, for example) could be excited in such process with sufficiently high efficiency, albeit lower than that in crystals. The low efficiency of interaction of oxygen deficient centers with quasi-particles is attributed to isolation of these centers in clusters and the non-radiative annihilation of the quasi-particles on the boundaries of these clusters with the main network.     

Experimental and theoretical studies on dynamic properties of Li ions in LixMn2O4

In order to study the dynamic properties of Li_xMn₂O₄, potential relaxation techniques (PRT) is used to measure the chemical diffusion coefficient of Li_xMn₂O₄. Results are presented for x ranges from x=0.1 to 0.9. They show that the chemical diffusion coefficient at the two-phase coexistent stage near x=0.3 and 0.7 is higher than at the single-phase stage during the insertion and extraction process. Monte Carlo (MC) simulations are also used to simulate the ionic conductivity σ of Li ions in Li_xMn₂O₄ and its dependence as a function of lithium concentration x. The results show an M shaped curve in the plot of ionic conductivity σ versus x when the simulation temperature is 293 K, which confirms the experimental PRT results. The voltage profiles of Li_xMn₂O₄/Li cells were also simulated with different boundary conditions.     

An anomalous way to quantize solitons

We picture soliton solutions as collective modes. Their quantization is performed analogously to examples from many-body theory. In contrast to previous approaches we aim for effective actions of both type of degrees of freedom, collective as well as the non-collective ones, plus coupling terms. The procedure used is an adapted version of the Bohm-Pines method, originally developed for treating collective modes of the electron gas, later applied to nuclear transport theory. As one of the novel features we exploit chiral transformations to introduce the collective variables.Dedicated to Prof. Dr. H. J. Mang on the occasion of his 60th birthday     

A_α型缩聚物的分子量分布函数及对凝胶的分子解释

非线型缩聚物的分子量分布,最早由Flory和Stockmayer应用组合理论得到。不少实际的非线型缩聚体系,分布函数相当复杂。江元生用解动力学方程的方法得到了和组合法相同的结果。Gordon用无规支化理论处理了A_a型缩聚物的分布问题。近年来,唐敖庆等又提出了通过溶胶凝胶分配理论推导分布函数的方法。本文给出一种分子树模型,能更     

Vibronic spectra of charge transfer excitons and of mixed charge transfer and Frenkel excitons

The linear absorption spectra in the excitonic and vibronic regions in the case of mixing of Frenkel excitons (FEs) and charge-transfer excitons (CTEs) have been theoretically studied for the exciton parameters of the crystals of MePTCDI and PTCDA. Two coupling parameters for the exciton–phonon coupling are introduced: the FE–phonon coupling and the CTE–phonon coupling. The main features of the vibronics in the absorption spectra are the following: (a) the existence of a doublet structure in the vibronic spectra of CTEs; (b) the vibronic levels of the FE at intermediate values of both coupling parameters are located in the continuum of the many-particle exciton–phonon states which makes its absorption line wide and flat; (c) in the case of strong coupling (coupling constants larger than 1) a doublet of bound states appears above this continuum; (d) in the case of vanishing CTE–phonon coupling the vibronics of the charge transfer excitons practically disappear in the absorption spectra.     

A cellular automata model for avascular solid tumor growth under the effect of therapy

Tumor growth has long been a target of investigation within the context of mathematical and computer modeling. The objective of this study is to propose and analyze a two-dimensional stochastic cellular automata model to describe avascular solid tumor growth, taking into account both the competition between cancer cells and normal cells for nutrients and/or space and a time-dependent proliferation of cancer cells. Gompertzian growth, characteristic of some tumors, is described and some of the features of the time-spatial pattern of solid tumors, such as compact morphology with irregular borders, are captured. The parameter space is studied in order to analyze the occurrence of necrosis and the response to therapy. Our findings suggest that transitions exist between necrotic and non-necrotic phases (no-therapy cases), and between the states of cure and non-cure (therapy cases). To analyze cure, the control and order parameters are, respectively, the highest probability of cancer cell proliferation and the probability of the therapeutic effect on cancer cells. With respect to patterns, it is possible to observe the inner necrotic core and the effect of the therapy destroying the tumor from its outer borders inwards.