Lower Energy α Elastic Scattering on ^20Ne and Anomaly of α＋^20Ne Scattering System

The α+²⁰Ne elastic scattering angular distributions at lower incident energies of Eα= 12.7--31.1 MeV have been analyzed by using the α-folding potential based on the α+¹⁶O structure model of the ²⁰Ne nucleus. The α-folding potential with a standard Woods-Saxon type imaginary part, can reasonably describe experimental cross sections and the anomalous large angle scattering (ALAS) features. The anomaly of the α+²⁰Ne scattering system is further confirmed in the lower incident energy region.     

A new kind of nonlinear fractional-order chaotic phenomenon in coupled systems： coexistence of anti-phase and complete synchronization

In this paper, we have found a kind of interesting nonlinear phenomenon hybrid synchronization in linearly coupled fractional-order chaotic systems. This new synchronization mechanism, i.e., part of state variables are anti- phase synchronized and part completely synchronized, can be achieved using a single linear controller with only one drive variable. Based on the stability theory of the fractional-order system, we investigated the possible existence of this new synchronization mechanism. Moreover, a helpful theorem, serving as a determinant for the gain of the controller, is also presented. Solutions of coupled systems are obtained numerically by an improved Adams Bashforth-Moulton algorithm. To support our theoretical analysis, simulation results are given.     

A new type of Lie symmetrical non-Noether conserved quantity for nonholonomic systems

For a nonholonomic system, a new type of Lie symmetrical non-Noether conserved quantity is given under general infinitesimal transformations of groups in which time is variable. On the basis of the invariance theory of differential equations of motion under infinitesimal transformations for t and q_s, we construct the Lie symmetrical determining equations, the constrained restriction equations and the additional restriction equations of the system. And a new type of Lie symmetrical non-Noether conserved quantity is directly obtained from the Lie symmetry of the system, which only depends on the variables t, q_s and \dot{q}_s. A series of deductions are inferred for a holonomic nonconservative system, Lagrangian system and other dynamical systems in the case of vanishing of time variation. An example is given to illustrate the application of the results.     

基于14 MeV中子的烧氚历史诊断模拟研究

针对直接测量16.7 MeV进行烧氚历史诊断所需聚变产额高的情况,模拟研究了利用14 MeV中子与副靶作用产生的非弹伽马进行烧氚历史诊断的情况,计算了几种材料14 MeV中子作用产生的次级伽马能谱以及切伦科夫辐射阈能之上的非弹伽马数目,对副靶材料和厚度进行了选择。计算了14 MeV中子产生的切伦科夫光子时间谱,分析了光电转换器件处伽马、电子以及正电子等噪声信号,分析了气体切伦科夫系统测量统计涨落与聚变中子产额之间的关系,确定了气体切伦科夫系统所适用的最低聚变中子产额,通过测量14 MeV中子与副靶产生的非弹伽马进行烧氚历史诊断较直接测量16.7 MeV伽马可将测量所需聚变中子产额降低2个量级。     

正弦振动对航空相机成像影响的分析与验证

航空相机拍照时,由于受到振动影响成像分辨率会降低。采用动态调制传递函数研究正弦振动对成像的影响,通过基于空间域的计算方法对高频和低频振动的调制传递函数(MTF)进行了分析,指出了曝光时间不等于振动周期整数倍的一般情况时,高频振动对成像质量的影响也具有随机性,但没有低频振动的随机性明显。采用快速反射镜作为振动源进行成像实验,对获得的振动图像使用小波变换提取图像的高频信息。实验中将曝光时间设定为20ms,振动频率为50Hz时,高频信息波动范围仅为0.0582×104,可以认为基本没有波动。当振动频率为15Hz时,波动范围为0.6233×104,随机性很明显,而振动频率为65Hz时,波动范围为0.1245×104,随机性不明显。通过高频信息与MTF的对应关系,实验证明了理论分析的正确性。在理论分析和实验的基础上,总结了正弦振动对成像影响的普遍性结论。该结论可用于分析成像系统光机结构设计,也可应用于图像去模糊,具有一定的意义。     

树型结构半导体光放大器光交换矩阵的可靠性(英文)

针对光交换系统的可靠性研究已卓有成效,但作为光交换系统的核心元件——光交换矩阵的可靠性却始终没有得到足够的重视.本文利用可靠性框图对基于半导体光放大器的树型结构光交换矩阵进行了可用性分析.分析结果表明该型光交换矩阵在可靠性上存在的不足,需要设计保护结构.通过对已有的光交换系统可靠性研究工作的分析总结,提出了两种针对树型结构光交换矩阵的保护结构,并利用可靠性框图和概率统计方法对其进行比较分析了两种结构的特点.研究表明,交换矩阵对于SOA的可靠性最为敏感.交换矩阵保护结构的设计过程,实际上是系统可靠性、成本、体积及性能的折衷.因其对成本和可靠性的影响,能否提供有效的检测和维护也应在保护结构的设计过程中予以考虑.     

Effects of Annealing on Schottky Characteristics in A1GaN/GaN HEMT with Transparent Gate Electrode

A1GaN/GaN heterostructure transistors are promising for power and switching applications. In addition, the transparent wide band-gap A1GaN/GaN heterostructure systems have received considerable attention to transparent electronics. Nowdays, Al-doped ZnO （AZO） thin film plays an increas- ingly important role in various fields of transparent electronics.The AZO-gated A1GaN/GaN HEMT with good dc characteristics and frequency character- istics has been reported. Annealing is widely used to improve the electri- cal characteristics of A1GaN/GaN HEMTs. It is re- ported that the Schottky leakage current can be re- duced by over four orders of magnitude by annealing in an A1GaN/GaN heterostructure with ITO/Ni/Au electrode. Pei et al. reported that the transparency of Ni/ITO gates of A1GaN/GaN HEMTs has been sig- nificantly improved after annealing. However, the evaluation of Schottky C V characteristics was ab- sent. Up to now, few results are reported on the Schot- tky annealing characteristics of AZO in A1GaN/GaN HEMT. Thus the effects of annealing on the leakage current, transparency and interface states character- istics need further study.