Superconductivity in non-stoichiometric and tin-substituted La2CuO4: preparation, characterization, Mössbauer and microwave-absorption studies

Two samples of non-stoichiometric La₂CuO₄ were synthesized, one with La/Cu<2, and the other with 10% Sn substituting Cu. They were investigated by X-ray diffraction, Mössbauer spectroscopy, and microwave-absorption techniques. The microwave-absorption data indicated that they were both superconducting, with the transition temperatures T_c of 40.5 and 41.5 K, the one doped with Sn possessing the higher T_c. The Mössbauer spectra revealed that there exist two kinds of Sn(IV) atoms disordered with Cu. Their isomer shift, δ=−0.244(4) mm/s, is in agreement with Sn(IV) coordinated by oxygen. One site was characterized by a single Mössbauer line, being associated with a weakly distorted environment, wherein the Sn, coordinated more symmetrically, is surrounded by four Cu²⁺ ions. On the other hand, the other site, characterized by a Mössbauer doublet exhibited a quadrupole splitting Δ=1.07(2) mm/s, being associated with a highly distorted coordination, explained to be due to Sn occupying two adjacent cationic sites. To our knowledge, such a substitution for copper ions not resulting in a decrease of T_c has not been reported previously.     

Thermal expansion of Sn2P2S6 crystals

We present the results for thermal expansion coefficients of Sn₂P₂S₆ crystals determined both in the crystallographic system and the system based on eigenvectors of thermal expansion tensor. Peculiarities of temperature evolution of the indicative surface of thermal expansion tensor for Sn₂P₂S₆ are discussed, including the region of their ferroelectric phase transition.     

掺CH4的SiCOH低介电常数薄膜结构与介电性能研究

以十甲基环五硅氧烷和甲烷作为反应气体，采用电子回旋共振等离子体化学气相沉积(ECR-C VD)方法制备了k = 2.45，485℃下的热稳定性优良的SiCOH低介电常数薄膜.通过薄膜结构的 FTIR谱分析，比较了十甲基环五硅氧烷(D5)液态源和不同甲烷流量下制备的薄膜的键结构差 异，发现在沉积过程中甲烷含量的增大，一方面有利于D5源环结构的保留，另一方面有利于 薄膜中形成高密度的CH_n基团.高密度碳氢大分子基团的存在降低了薄膜密度， 结合薄膜中形成的本构孔隙、低极化率Si—C键以及—OH键减少的共同作用，导致薄膜介电 常数的降低. 关键词： 低介电常数 SiCOH薄膜 碳氢掺杂     

6─或8─脂代─7─氧香豆素与二氢呋喃香豆素的NMR，MS研究

对从重齿毛当归（ＡｎｇｅｌｉｃａｐｕｂｅｓｃｅｎｓＭａｘｉｍｆ．ｂｉｓｅｒｒａｔａＳｈａｎｅｔＹｕａｎ）根及根茎中分得的１２种６－或８－脂代－７－氧－香豆素和８种二氢呋喃香豆素衍生物进行了１Ｈ和１３ＣＮＭＲ分析研究．结合文献．做出规律性总结．运用２ＤＮＭＲ技术．对文献中当归醇类化合物碳谱中的个别错误归属给予了纠正，并首次探讨了此类化合物的ＭＳ裂解途径．     

(AgBr)6结构计算及对计算方法的依赖

利用HF、B3LYP方法分别结合LANL2DZ,CEP-121G赝势基组及3-21G*全电子基组对(AgBr)6的可能异构体进行结构优化。结果显示,HF、B3LYP方法在各基组水平上优化的(AgBr)6基态结构并不完全一致,表明(AgBr)6结构计算对计算方法具依赖性。对优化后能量始终较低的5个结构,进一步采用MP2方法结合上述基组进行高精度的结构优化。确定(AgBr)6基态结构为双三角形环重叠结构,并计算了该结构的红外光谱。     

快放电直线型变压器驱动源磁芯脉冲损耗特性

建立了快脉冲磁芯损耗特性测试平台,对比研究了50 m的DG6硅钢和25 m的2605TCA非晶两种材料磁芯损耗特性;采用一种新的特征参量(磁芯单位面积上激磁电压陡度)来规范磁芯的激磁电压条件,使得实验结果与快放电直线型变压器驱动源实际工作条件下磁芯性能具有可比性;通过测量初级漏电流及次级开路电压,获得了相同激磁条件下两种磁芯等效损耗电阻的大小,50 m 的DG6硅钢磁芯损耗约为25 m的2605TCA非晶磁芯损耗的4倍;计算了两种材料磁芯总损耗中涡流损耗所占的比例,50 m的DG6硅钢磁芯涡流损耗占总损耗的75%,25 m的2605TCA非晶磁芯涡流损耗占总损耗的28%。     

静高压下Al80Mn14Si6合金准晶相形成的研究

 本文首次研究了Al₈₀Mn₁₄Si₆合金在静高压下准晶相得形成。利用静高压熔态淬火方法，在压力2.8和3.1 GPa下得到淬火的Al-Mn-Si样品。电子和X射线衍射实验表明，高压淬火样品中含有准晶二十面体相和非晶相。X射线衍射实验还表明，高压淬火样品经350 ℃退火一小时基本上没有发生变化；而经过500 ℃退火一小时后，准晶相晶化为α-Al₇₃Si₁₀Mn₁₇相。另外，电子衍射实验表明，高压淬火后样品中还存在其它中间亚稳相。本文还讨论了静高压熔态淬火方法的适用性。     

新型二硫纶·菲咯啉-5，6-二酮合铜(Ⅱ)配合物的磁性研究

报道了新合成的二氰基二硫纶·菲咯啉-5，6-二酮合铜(Ⅱ)配合物CuLL′(L=mnt^2-, 1,2-dicyano-1,2-ethylenedithiolate; L′=phen-5，6-dione, 1,10-phenanthroline-5,6-dione)的变温磁化率和电子顺磁共振波谱表征结果. 发现微晶粉体型的标题配合物CuLL′具有一定的顺磁性，形成四配位的近似于方形的结构. 探讨了这种配合物磁学特性与结构的关系.     

Classical verigin problem as a limit case of verigin problem with surface tension at free boundary

In this psper we consider Verigin problem with surface tension st free     

三硼酸铯和硼酸铯锂晶体的晶格振动光谱研究

本文对新型非线性光学晶体三硼酸铯（ＣｓＢ３Ｏ５∶ＣＢＯ）和硼酸铯锂（ＣｓＬｉＢ６Ｏ１０∶ＣＬＢＯ）进行了晶格振动光谱研究。首先对两种晶体的基本晶格振动模进行了对称性分类,记录了两种晶体低温下的拉曼光谱和室温下的红外反射光谱,对晶体的晶格振动模进行了认定,将振动模归属于平面六元环（Ｂ３Ｏ６）和四面体（ＢＯ４）。然后比较了ＣＢＯ,ＣＬＢＯ和ＬＢＯ（ＬｉＢ３Ｏ５）三种晶体的晶格振动光谱,讨论了阳离子对振动光谱的影响。另外,还讨论了硼酸盐晶体晶格振动模ＬＯ ＴＯ分裂的大小与晶体非线性光学系数之间的关系。