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941.
从价核子自由度出发构造出核跃迁电荷/电流密度算符,采用Dyson玻色子展开技术给出了获取核玻色子形式跃迁电荷/电流密度有效算符的一种微观方法(BE方法).利用微观相互作用玻色子模型(IBM)提供的波函数可在玻色子态空间中求出核跃迁电荷/电流密度,结合电子-核散射以及核电磁跃迁的形式理论,建立了可研究电子-核散射各种形状因子,微分散射截面以及核约化跃迁几率、电磁多极矩、核态g因子等物理量的理论方案.在一种微观sdIBM-2框架下,结合现有理论方案,初步计算了 相似文献
942.
943.
碳纳米管及其H_2吸附体系的Raman光谱 总被引:1,自引:0,他引:1
利用紫外Raman光谱技术 ,对分别以CO和CH4为碳源、由化学催化法制备的两种多壁碳纳米管以及它们的H2 吸附体系进行Raman光谱表征 ,观测到可分别归属于类石墨结构的基频模G (1 5 80cm- 1 )和D (1 41 6cm- 1 ,缺陷诱导 ) ,以及它们的二阶和三阶组合频 2D(2 83 2cm- 1 ) ,D +G (2 996cm- 1 ) ,2G (3 1 6 0cm- 1 )和 2D +G (441 2cm- 1 )的Raman峰 ;H2在这些多壁碳纳米管上吸附有两种形式 :非解离吸附分子氢H2 (a)和解离吸附生成含氢表面物种CHX(x =3 ,2 ,1 ) ,所观测在 2 85 0 ,2 96 7和 3 95 0cm- 1 处的Raman谱峰可分别归属于表面CH2 基的对称C -H伸缩模 ,CH3基的不对称C -H伸缩模 ,以及吸附态分子氢H2 (a)的H -H伸缩模 相似文献
944.
945.
使用子孔径拼接技术可以无需补偿器、大口径的辅助镜、全息图等辅助元件实现对大口径、大偏离量、高陡度非球面甚至离轴非球面的检验,而且可以同时获得中高频的相位信息,大大地提高了测量精度,降低了成本。在总结了常用检测非球面方法优缺点的基础上提出了利用圆形子孔径、环形子孔径检测非球面的基本原理,并对其步骤的实现、数学模型的建立和拼接算法的开发进行了分析和研究。结果表明,子孔径拼接检测技术可以作为补偿检验以外的另一种定量测试非球面的手段,可以和其它检测方法相互验证,从而确保检测的准确性和可靠性。 相似文献
946.
947.
Design of Two-Dimensional Photonic Crystal Edge Emitting Laser for Photonic Integrated Circuits 下载免费PDF全文
An edge emitting laser based on two-dimensional photonic crystal slabs is proposed. The device consists of a square lattice microcavity, which is composed of two structures with the same period but different radius of air-holes, and a waveguide. In the cavity, laser resonance in the inner structure benefits from not only the anomalous dispersion characteristic of the first band-edge at the M point in the first Brillouin-zone but also zero photon states in the outer structure. A line defect waveguide is introduced in the outer structure for extracting photons from the inner cavity. Three-dimensional finite-difference time-domain simulations apparently show the in-plane laser output from the waveguide. The microcavity has an effective mode volume of about 3.2(λ/nslab)^3 for oscillation mode and the quality factor of the device including line defect waveguide is estimated to be as high as 1300. 相似文献
948.
The solid-liquid interface motion of NaBi(WO4)2 (NBWO) melt crystal growth is observed in an in situ system, in which the whole processes of interface transition from fiat interface and cellular to dendrite are visualized. The spacing of the dendrite under smaller temperature gradient turns out to be larger than that under larger temperature gradient, which is found to be sensitive to the temperature distribution. The mechanism of dendrite growth of NBWO is studied based on the model of the growth units of anion coordination polyhedra. The { 001} face has two apex links, so it shows higher stability and has high growth rate and forms the arm of dendrite, whereas the {010} face has only one apex link, and thus shows relative slower growth rate and firstly forms the branches. 相似文献
949.
Thiophene-fluorene derivatives with high three-photon absorption activities and their application to optical power limiting 下载免费PDF全文
The three-photon absorption (3PA) properties of two thiophene-fluorene
derivatives (abbreviated as MOTFTBr and {ATFTBr}) have been determined by using a
Q-switched Nd:YAG laser pumped with 38ps pulses at 1064nm in DMF. The
measured 3PA cross-sections are 152\times 10-78cm6s2 and
139\times 10-78cm6s2, respectively. The optimized
structures were obtained by AM1 calculations and the results indicate that
these two molecules show nonplanar structures, and attaching different
donors has different effects on the molecular structure. The charge density
distributions during the excitation were also systematically studied by
using AM1 method. In addition, an obvious optical power limiting effect
induced by 3PA has been demonstrated for both derivatives. 相似文献
950.
MgxZn1-xO thin films have been prepared on silicon substrates by radio
frequency magnetron sputtering at 60℃. The thin films have hexagonal
wurtzite single-phase structure and a preferred orientation with the c-axis
perpendicular to the substrates. The refractive indices of MgxZn1-xO films
are studied at room temperature by spectroscopic ellipsometry over the wavelength
range of 400--760\,nm at the incident angle of 70℃. Both absorption
coefficients and optical band gaps of MgxZn1-xO films are determined by
the transmittance spectra. While Mg content is increasing, the absorption edges of
MgxZn1-xO films shift to higher energies and band gaps linearly increase
from 3.24.eV at x=0 to 3.90\,eV at x=0.30. These results provide important
information for the design and modelling of ZnO/ MgxZn1-xO heterostructure
optoelectronic devices. 相似文献