极化子导电到能带导电的转变

采用交流法测量大功率商用钛酸钡(BT)陶瓷加热器的电阻和加热功率随温度的变化关系.结果显示,BT陶瓷的电导特性在80℃附近出现了明显的转变,从低温时的极化子跳跃导电转变为高温时的能带导电,此时,电阻出现极小值,而加热功率出现极大值.     

3D building reconstruction from aerial CCD image and sparse laser sample data

An approach for 3D building reconstruction automatically based on aerial CCD image and sparse laser scanning sample points is presented in this paper. The geometry shape of a building is shown very clearly in the aerial high-resolution CCD image, so we use Laplacian sharpening operator and threshold segmentation to extract the edges of CCD image first, and then pixel connectivity is used to extract the linear features in the CCD image. Bi-direction projection histogram and line matching are proposed to extract the contours of buildings. The height of the building is determined from sparse laser sample points which are within the contour of the buildings extracted from CCD image; therefore the 3D information of each building is reconstructed. We reconstruct 3D buildings correctly by this approach using real aerial CCD and sparse laser rangefinder data.     

A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress

This paper studies systematically the drain current collapse in AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors （MOS-HEMTs） by applying pulsed stress to the device. Low-temperature layer of Al2O3 ultrathin film used as both gate dielectric and surface passivation layer was deposited by atomic layer deposition （ALD）. For HEMT, gate turn-on pulses induced large current collapse. However, for MOS-HEMT, no significant current collapse was found in the gate turn-on pulsing mode with different pulse widths, indicating the good passivation effect of ALD Al2O3. A small increase in Id in the drain pulsing mode is due to the relieving of self-heating effect. The comparison of synchronously dynamic pulsed Id - Vds characteristics of HEMT and MOS-HEMT further demonstrated the good passivation effect of ALD Al2O3.     

All-optical switchings of 3-hydroxyflavone in different solvents

3-hydroxyflavone （3-HF） is an organic molecule with an excited-stated intramolecular proton transfer （ESIPT） effect. All-optical switchings and beam deflections of 3-HF in three kinds of solvents （cyclohexane, ethanol and dimethyl sulfoxide） have been investigated by using the third-harmonic generation （355 nm） of a mode-locked Nd：YAG laser as a pump beam and a continuous-wave （cw） He-Ne laser （632.8 nm） as a probe beam. The nonlinear refractive indices of 3-HF in the three different solvents are determined by using the Z-scan technique under an ultraviolet （UV） pump beam at a wavelength of 355 nm. It has been found that the optical switching and beam deflection effects result from the change in refractive index of 3-HF under the irradiation of the pump beam. On the basis of the analyses of absorption spectra and fluorescence spectra, we conclude that the change in refractive index of 3-HF is due to not the thermal effect but the ESIPT effect of 3-HF under the pump beam. As the ESIPT is exceedingly fast, 3-HF might be an excellent candidate for high-speed optical switching.     

Multi-reference calculations of the photodissociation of HSCH3 molecule

This paper performs multi-reference second-order perturbation theory calculations on the ground state and a number of low-lying excited states of HSCH3 molecule, and calculates the vertical excitation energies and low-energy potential-energy curves, based on which the photodissociation channels of HSCH3 at 193,222,248 nm are clarified.     

Numerical simulation of end-pumped CW Nd^3＋：GdVO4 laser at 1063 nm

A theoretical model to simulate an end-pumped CW Nd^3＋：GdVO4 laser at 1063 nm is presented. Its essence is to use the propagation equations to demonstrate the spatial evolutions of the pump and the laser powers in the cavity, hence it is applicable to both low and high gain lasers. The simulation results obtained by this model are in good agreement with the experimental observations reported in the literature for a Ti：sapphlre-pumped Nd^3＋：GdVO4 laser. Moreover, some parameters, such as the reflectivity of output coupler, the spot size of laser beam and the crystal length, are discussed with a view to optimizing the laser performance.     

Luminescence characteristics of Eu3+ activated borate phosphor for white light emitting diode

In this paper, the Sr₃Y₂ (BO₃)₄:Eu³⁺ phosphor was synthesized by high temperature solid-state reaction method and the luminescence characteristics were investigated. The emission spectrum exhibits one strong red emission at 613nm corresponding to the electric dipole ⁵D₀--⁷F₂ transition of Eu³⁺ under 365nm excitation, this is because Eu³⁺ substituted for Y³⁺ occupied the non-centrosymmetric position in the crystal structure of Sr₃Y₂ (BO₃)₄. The excitation spectrum indicates that the phosphor can be effectively excited by ultraviolet (254nm, 365nm and 400nm) and blue (470nm) light. The effect of Eu³⁺ concentration on the red emission of Sr₃Y₂ (BO₃)₄:Eu³⁺ was measured, the result shows that the emission intensities increase with increasing Eu³⁺ concentration, then decrease. The Commission Internationale del'Eclairage chromaticity (x, y) of Sr₃Y₂(BO₃)₄:Eu³⁺ phosphor is (0.640,0.355) at 15 mol% Eu³⁺.     

热舟蒸发LaF3薄膜的紫外性能研究

研究了沉积温度对热舟蒸发氟化镧薄膜结构和光学性能的影响,沉积温度从200℃上升到350℃,间隔为50℃.采用分光光度计测量了样品的透射率和反射率光谱曲线,并在此基础上进行了光学损耗、光学常数以及带隙和截止波长的计算.采用表面轮廓仪进行了表面形貌和表面粗糙度的标定,采用X射线衍射(XRD)方法测量了不同沉积温度下样品的微结构.发现在短波长波段,随着沉积温度的升高,光学损耗增加,晶粒尺寸增大,表面粗糙度略有增加.不过散射损耗在光学损耗中所占比例均很小,光学损耗的增加主要由吸收损耗引起.随着沉积温度的升高,折射 关键词： 光学薄膜 沉积温度 3')" href="#">LaF₃ 光学损耗     

3d过渡金属在NiAl中的占位及对键合性质的影响

通过赝势平面波方法系统地研究了3d过渡金属元素在B2-NiAl中的占位以及对键合性质的影响.通过形成能得出Sc,Ti,V 和Zn元素优先取代NiAl中的Al位,而Cr,Mn,Fe,Co和Cu优先取代Ni位.通过分析晶格常数变化量、电荷聚居数、交叠聚居数以及价电荷密度分布, 讨论了晶格畸变和键合性质的变化.结果表明: 取代Al的Sc,Ti,V和Zn元素掺杂使NiAl中晶格发生畸变,这对NiAl键合性质的变化起着重要作用,这些掺杂元素与第一近邻Ni原子产生强烈的排斥作用,形成反键,同时它们之间发生较大的电荷转 关键词： NiAl金属间化合物 3d过渡金属 第一性原理 键合性质