Ylidaddukte der Penteltrichloride

Ylide Adducts of Pentele Trichlorides Ylides Ph₃PCR₂ form 1 : 1 adducts with PCl₃, AsCl₃ und SbCl₃. The addition of HCl to dichlorophosphanyl- und dichloroarsanyl ylides also leads to such adducts. In solution the PCl₃ adducts 2 are dissociated into ions. For the AsCl₃ adducts 3 b and 3 e of triphenylphosphonium ethylide and isopropylide X-ray analyses show distinctly different degrees of transition from a zwitterionic ψ-tbp to a cationic ψ-tetrahedral structure. The SbCl₃ adduct 4 b of the triphenylphosphonium ethylide on the other hand forms a rather asymmetric dimer and approaches a square-pyramidal geometry at the antimony atom. The 2 : 1 ylide adducts 11 with PCl₃ form in solution the dications (Ph₃PCR₂)₂PCl²⁺. The 2 : 3 adduct 15 of triphenylphosphonium methylide to AsCl₃ also has an ionic structure in the crystal. There are cations (Ph₃PCH₂)₂AsCl²⁺, which pairwise join with two AsCl₃ molecules to form doubly charged supracations in the presence of As₂Cl₈^2– as counterions.     

Sb2S3纳米粒子修饰ZnO纳米片微纳分级结构的光电化学性能

采用恒电位方法,选择氯化钾和乙二胺(EDA)为添加剂,在氧化铟锡(ITO)导电玻璃上制备了高度有序的ZnO纳米片阵列,通过二次电沉积得到了ZnO纳米片上生长纳米棒的微纳分级结构.利用化学浴沉积法在ZnO基底上沉积Sb₂S₃纳米粒子制备出了Sb₂S₃/ZnO纳米片壳核结构和Sb₂S₃/ZnO微纳分级壳核结构.利用扫描电子显微镜(SEM)、X射线衍射(XRD)、紫外-可见(UV-Vis)吸收光谱、瞬态光电流等对其形貌、结构组成和光电化学性能进行了表征和分析.结果表明, Sb₂S₃/ZnO纳米片上生长纳米棒分级壳核结构的光电流明显高于Sb₂S₃/ZnO纳米片壳核结构.在Sb₂S₃/ZnO纳米片壳核结构和Sb₂S₃/ZnO微纳分级壳核结构的基础上旋涂一层P3HT薄膜形成P3HT/Sb₂S₃/ZnO复合结构,以上述复合结构薄膜为光活性层组装成杂化太阳电池,其中, P3HT/Sb₂S₃/ZnO分级壳核结构杂化太阳电池的能量转换效率最高,达到了0.81%.     

Dust acoustic wave in a dusty plasmas with streaming ions and nonadiabatic dust charge variation

The effects of nonadiabatic dust charge fluctuation on the nonlinear propagation of the dust acoustic (DA) solitary wave in collisionless dusty plasma with streaming ions have been investigated. By using the reductive perturbation technique, a modified Korteweg-de Vries (mKdV) equation governing the nonlinear waves was derived and the solitary solution of the mKdV equation was also obtained. It was shown that the damping rate of the slow mode DA solitary wave was strongly affected by the ion streaming velocity.     

Small amplitude variable charge dust Bernstein-Greene-Kruskal double layers

A first theoretical attempt is made to investigate small amplitude, variable charge dust Bernstein-Greene-Kruskal (BGK) double layers (DLs). The nature of the dust BGK-DLs (compressive or rarefactive), their strength and thickness depend sensitively on the net negative charge residing on the grain surface, the dust grain dynamics and, more interestingly, on the ion-to-electron temperatures ratio.     

金矿石中高含量锑的断续流动氢化物发生-原子荧光光谱法快速测定

采用王水（1＋1）水浴分解样品,氢化物发生-原子荧光光谱法（HG-AFS）测定金矿石中高含量的锑.其方法回收率在95.0%-102.0%之间,相对标准偏差在1.0%-3.4%之间,方法检出限为3.0×10-10g/mL,经试验证实该方法可测范围宽、简便、快速、准确,实验室间对比分析结果吻合程度令人满意.     

Phase composition and phase transformation in Bi(Sb,Nb,Ta)O4 system

In this work Bi(Sb_xNb_yTa_z)O₄ (x + y + z = 1) samples are prepared using mixed-oxide method. A pseudo-ternary phase diagram of Bi(Sb,Nb,Ta)O₄ system is given below the melting point. It is composed of a monoclinic phase region, an orthorhombic phase region and a monoclinic–orthorhombic co-existing phase region. In the orthorhombic phase region, the transformation from orthorhombic to triclinic phase is found to be sensitive to the composition and sintering temperature. Both the transformation from monoclinic to orthorhombic structure and the transformation from orthorhombic to triclinic structure have been studied by the cell parameters.     

Improved thermoelectric performance in p-type Bi_(0.48)Sb_(1.52)Te_3 bulk material by adding MnSb_2Se_4

Bismuth telluride(Bi_2Te_3) based alloys, such as p-type Bi_(0.5)Sb_(1.5)Te_3, have been leading candidates for near room temperature thermoelectric applications. In this study, Bi_(0.48)Sb_(1.52)Te_3 bulk materials with MnSb_2Se_4 were prepared using high-energy ball milling and spark plasma sintering(SPS) process. The addition of MnSb_2Se_4 to Bi_(0.48)Sb_(1.52)Te_3 increased the hole concentration while slightly decreasing the Seebeck coefficient, thus optimising the electrical transport properties of the bulk material. In addition, the second phases of MnSb_2Se_4 and Bi_(0.48)Sb_(1.52)Te_3 were observed in the Bi_(0.48)Sb_(1.52)Te_3 matrix. The nanoparticles in the semi-coherent second phase of MnSb_2Se_4 behaved as scattering centres for phonons,yielding a reduction in the lattice thermal conductivity. Substantial enhancement of the figure of merit, ZT, has been achieved for Bi_(0.48)Sb_(1.52)Te_3 by adding an Mn_(0.8)Cu_(0.2)Sb_2Se_4(2mol%) sample, for a wide range of temperatures, with a peak value of 1.43 at 375 K, corresponding to ~40% improvement over its Bi_(0.48)Sb_(1.52)Te_3 counterpart. Such enhancement of the thermoelectric(TE) performance of p-type Bi_2Te_3 based materials is believed to be advantageous for practical applications.     

Robustness of the unidirectional stripe order in the kagome superconductor CsV3Sb5

V-based kagome materials AV₃Sb₅ (A=K, Rb, Cs) have attracted much attention due to their novel properties such as unconventional superconductivity, giant anomalous Hall effect, charge density wave (CDW) and pair density wave. Except for the 2a₀×2a₀ CDW (charge density wave with in-plane 2×2 superlattice modulation) in AV₃Sb₅, an additional 1×4 (4a₀) unidirectional stripe order has been observed at the Sb surface of RbV₃Sb₅ and CsV₃Sb₅. However, the stability and electronic nature of the 4a₀ stripe order remain controversial and unclear. Here, by using low-temperature scanning tunneling microscopy/spectroscopy (STM/S), we systematically study the 4a₀ stripe order on the Sb-terminated surface of CsV₃Sb₅. We find that the 4a₀ stripe order is visible in a large energy range. The STM images with positive and negative bias show contrast inversion, which is the hallmark for the Peierls-type CDW. In addition, below the critical temperature about 60 K, the 4a₀ stripe order keeps unaffected against the topmost Cs atoms, point defects, step edges and magnetic field up to 8 T. Our results provide experimental evidences on the existence of unidirectional CDW in CsV₃Sb₅.     

电合成2,2-二羟甲基丙酸

制备Ti/SnO2+Sb2O4/PbO2电极,电极的组分及其价态由XRD和XPS表征;该电极可将2,2-二羟甲基丙醛直接电合成2,2-二羟甲基丙酸.应用高效液相色谱分析原料和产物,电化学方法研究电合成影响因素,包括:2,2-二羟甲基丙醛浓度、溶液pH值、反应温度和氧化电位等.在优化条件下(pH=1,C醛=0.10 mol.L-1,t=15℃,E=1.8 V)电合成2,2-二羟甲基丙酸的转化率为58%,选择性36%,电流效率28%.本法为该产物的合成提供了一种新的途径.