Solid state ion trap: Lateral confinement of quantum well excitons by oscillating piezoelectric field

We theoretically investigate a new type of lateral trap that can be used to confine quantum well excitons. By sending an ultrahigh frequency bulk acoustic wave from the substrate of III-V semiconductors such as GaAs or GaN, an oscillating piezoelectric field is generated. The effective potential induced by the oscillating piezoelectric field implements a type I lateral trap. Such a controllable quantum confinement is essential in many semiconductor nano-electronics and nano-photonics applications.     

Optical-to-microwave frequency chain utilizing a two-laser-based optical parametric oscillator network

A method for building an optical-to-microwave frequency chain and for measuring optical frequencies relative to the cesium primary frequency standard is described. Based on optical frequency division via parametric oscillators, the concept is to generate two known ratios (1/2 and 4/9) of an optical calibration frequencyf ₁ whose frequency difference is measured relative to the cesium clock. The (1/2) ratio is obtained by either a 2:1 frequency division off ₁ or second-harmonic generation of (l/2)f ₁. The (4/9) ratio off ₁ can be generated with a 3:1 frequency divider driven by a second laser atf ₂ that is chosen to be near (2/3)f ₁, which in turn is obtained with af ₁-pumped 3:1 frequency divider. A set of auxiliary Optical Parametric Oscillators (OPOs) with outputs centered at (1/2)f ₁ is used to facilitate the difference-frequency measurement between the two ratios. A practical configuration utilizing a YAG and a Ti: Al₂O₃ laser and its application to a number of precision measurements of interest are presented.     

Investigations on the soft-mode mechanism of the ferroelectric phase transition in

Dielectric and Raman spectroscopic measurements have been performed to investigate the ferroelectric phase transition in . Single crystals were grown by the zone melting method. The frequency dependence of the dielectric permittivity from 1 MHz to 1 GHz has been studied in a temperature range between 265 and 285 K. A Debye like dielectric dispersion was found, showing a critical slowing down around K. Polarized Raman spectra have been taken between 220 and 310 K. Two softening modes have been found, one of A- and another one of B / B g-symmetry. The phase transition mechanism in can be classified as partially order-disorder and partially displacive, confirming former structural results. It resembles strongly that of monoclinic . Received: 7 April 1998 / Revised: 5 June 1998 / Accepted: 16 June 1998     

Surface doping of semiconductors by pulsed-laser irradiation in reactive atmosphere

Intense pulsed-laser irradiation in a suitable chemical atmosphere can produce a significant incorporation of chemical species from the environment to the surface molten layer. This process has been used to produce p-n junctions in silicon and GaAs irradiated, respectively, in PCl₃ and SiH₄ atmospheres. A modelling of the incorporation process, taking into account the solid-liquid-solid transition of the surface layer, has been developed following both a numerical and a semi-analytical approach. The modelling of the doping process gives results in a reasonably good agreement with the experimental doping profiles, obtained by irradiating Si samples in PCl₃ atmosphere.     

Thermally activated charge carriers and mid-infrared optical excitations in quarter-filled CDW systems

The optical properties of the quarter-filled single-band CDW systems have been reexamined in the model with the electron-phonon coupling related to the variations of electron site energies. It appears that the indirect, electron-mediated coupling between phase phonons and external electromagnetic fields vanishes for symmetry reasons, at variance with the infrared selection rules used in the generally accepted microscopic theory. It is shown that the phase phonon modes and the electric fields couple directly, with the coupling constant proportional to the magnitude of the charge-density wave. The single-particle contributions to the optical conductivity tensor are determined for the ordered CDW state and the related weakly doped metallic state by means of the Bethe-Salpeter equations for elementary electron-hole excitations. It turns out that this gauge-invariant approach establishes a clear connection between the effective numbers of residual, thermally activated and bound charge carriers. Finally, the relation between these numbers and the activation energy of dc conductivity and the optical CDW gap scale is explained in the way consistent with the conductivity sum rules.     

High-pressure Raman and infrared study of ZrV 2O7

The room-temperature Raman and infrared spectra of zirconium vanadate (ZrV ₂O₇) were observed up to pressures of 12 GPa and 5.7 GPa, respectively. The frequencies of the optically active modes at ambient pressure were calculated using direct methods and compared with experimental values. Average mode Grüneisen parameters were calculated for the Raman and infrared active modes. Changes in the spectra under pressure indicate a phase transition at ∼1.6 GPa, which is consistent with the previously observed α (cubic) to β (pseudo-tetragonal) phase transition, and changes in the spectra at ∼4 GPa are consistent with an irreversible transformation to an amorphous structure.     

Particle accelerator physics and technology for high energy density physics research

Interaction phenomena of intense ion- and laser radiation with matter have a large range of application in different fields of science, extending from basic research of plasma properties to applications in energy science, especially in inertial fusion. The heavy ion synchrotron at GSI now routinely delivers intense uranium beams that deposit about 1 kJ/g of specific energy in solid matter, e.g. solid lead. Our simulations show that the new accelerator complex FAIR (Facility for Antiproton and Ion Research) at GSI as well as beams from the CERN large hadron collider (LHC) will vastly extend the accessible parameter range for high energy density states. A natural example of hot dense plasma is provided by our neighbouring star the sun, and allows a deep insight into the physics of fusion, the properties of matter at high energy density, and is moreover an excellent laboratory for astroparticle physics. As such the sun's interior plasma can even be used to probe the existence of novel particles and dark matter candidates. We present an overview on recent results and developments of dense plasma physics addressed with heavy ion and laser beams combined with accelerator- and nuclear physics technology.     

Characterization of the ion cathode fall region in relation to the growth rate in plasma sputter deposition

In plasma-assisted magnetron sputtering, the ion cathode fall region is the part of the plasma where the DC electric field and ion current evolve from zero to their maximum values at the cathode. These quantities are straightforwardly related to the deposition rate of the sputtered material. In this work we derive simple relations for the measurable axially averaged values of the ion density and the ion current at the ion cathode fall region and relate them with the deposition rate. These relations have been tested experimentally in the case of an argon plasma in a magnetron sputtering system devoted to depositing amorphous silicon. Using a movable Langmuir probe, the profiles of the plasma potential and ion density were measured along an axis perpendicularly to the cathode and in front of the so-called race-track. The deposition rate of silicon, under different conditions of pressure and input power, has been found to compare well with those determined with the relations derived.     

Random networks of fibres display maximal heterogeneity in the distribution of elastic energy

Above a small length scale, the distribution of local elastic energies in a material under an external load is typically Gaussian, and the dependence of the average elastic energy on strain defines the stiffness of the material. Some particular materials, such as granular packings, suspensions at the jamming transition, crumpled sheets and dense cellular aggregates, display under compression an exponential distribution of elastic energies, but also in this case the elastic properties are well defined. We demonstrate here that networks of fibres, which form uncorrelated non-fractal structures, have under external load a scale invariant distribution of elastic energy (epsilon) at the fibre-fibre contacts proportional to 1/epsilon. This distribution is much broader than any other distribution observed before for elastic energies in a material. We show that for small compressions it holds over 10 orders of magnitude in epsilon. In such a material a few 'hot spots' carry most of the elastic load. Consequently, these materials are highly susceptible to local irreversible deformations, and are thereby extremely efficient for damping vibrations.