0.53 μm毫秒脉冲激光对GaAs热分解损伤特性

针对波长0.53 m的毫秒脉冲激光辐照GaAs的表面热分解损伤问题,建立了二维轴对称热传导模型,在考虑材料的热物性参数随温度变化的基础上,采用有限元法模拟了材料的瞬态温度场,得到了温度场分布特征及其随时间的变化规律,给出了材料表面发生热分解损伤阈值曲线。数值结果表明:毫秒脉冲激光对GaAs作用时,热传导影响着激光作用全过程,对应的损伤机理主要为热损伤;在激光作用下,被作用表面中心处温度最高,并且首先发生热分解损伤;随着作用激光能量密度的增加,GaAs表面发生热分解损伤的时刻不断提前。     

基于杂质光伏效应的镍掺杂对砷化镓太阳电池性能的影响

利用杂质光伏效应能够使太阳电池充分利用那些能量小于禁带宽度的太阳光子,从而提高电池的转换效率.为了更好地利用杂质光伏效应提高砷化镓太阳电池的转换效率,本文利用数值方法研究在砷化镓太阳电池中掺入镍杂质以形成杂质光伏太阳电池,分析掺镍对电池的短路电流密度、开路电压以及转换效率的影响;同时,探讨电池的陷光结构对杂质光伏太阳电池器件性能的影响.结果表明:利用杂质光伏效应掺入镍杂质能够增加子带光子的吸收,使得电池转换效率提高3.32%;转换效率的提高在于杂质光伏效应使电池的红外光谱响应得到扩展;另外,拥有良好的陷光结构是取得好的杂质光伏效应的关键.由此得出:在砷化镓太阳电池中掺镍形成杂质光伏太阳电池是一种能够提高砷化镓太阳电池转换效率的新方法.     

VB法生长低位错GaAs单晶

用于激光二极管(LD)和发光二极管(LED)的GaAs晶片,要求其具有低的位错密度(EPD).为了获得低位错密度的GaAs晶片,必须先得到低位错密度的体单晶.我们采用垂直布里奇曼(VB)法分别得到了2英寸和3英寸的GaAs单晶,单晶长度可达10cm,平均位错密度5000cm-2.通过改变加热器结构,改善轴向和径向的温度梯度,优化了生长时的固液界面,得到的单晶长度达20cm,平均位错密度为500cm-2,最大位错密度小于5000cm-2.     

高功率电磁脉冲对砷化镓金属半导体场效应管的影响

 采用时域有限差分方法,通过求解麦克斯韦方程、热传导方程和载流子方程,模拟了在电磁脉冲辐射下,场效应管器件温度和端口散射参数的变化过程。研究了不同幅度脉冲序列和上升沿不同的脉冲对砷化镓金属半导体场效应管的影响,对比了各种不同脉冲作用下场效应管性能的变化规律。该方法克服了传统电路模型无法模拟电磁波与器件内部活动粒子作用过程的缺点,可以直接模拟器件温度和散射参数在高功率电磁脉冲辐射下的时域变化过程。     

掺Yb3+晶体宽带可调谐激光输出特性

三块掺杂率均为5%的Yb3+激光晶体Yb:LSO、Yb:GSO和Yb:GYSO在完全相同的实验条件下由同一块熔融石英棱镜实现了可调谐激光的输出,调谐范围分别为70 nm、66 nm和74 nm.在输出镜透过率为6%时,LSO晶体的光-光转换效率为38.3%;GSO晶体在三者中容易获得更长波长的高功率输出;GYSO晶体由于具有较为平滑的调谐曲线而更容易获得锁模激光.     

掺镱氟铅硅酸盐玻璃光谱性质研究

采用高温熔融法制备了组成为(80-x)SiO2·xPbO·(17~19)( R2O+RF) ·(1~3)Yb2O3（R=Li、Na、K）（mol%）的掺镱氟铅硅酸盐玻璃,测量了样品的吸收光谱、荧光光谱和荧光寿命,利用McCumber理论计算了该玻璃系统中Yb3+离子2F5/2→2F7/2能级跃迁受激发射截面.结果表明,该玻璃在1 013 nm处的σemi为0.21×10－20 cm2,荧光有效线宽为94.8 nm,荧光寿命为2.36 ms.激光性能评价结果表明,该玻璃是实现大能量超短脉冲激光的理想材料.     

Demonstration and operation of quantum harmonic oscillators in an AlGaAs-GaAs heterostructure

Frontiers of Physics - Nonreciprocal microwave devices, in which the transmission of waves is non-symmetric between two ports, are indispensable for the manipulation of information processing and...     

High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure

A high-performance terahertz Schottky barrier diode (SBD) with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in this paper. Inductively coupled plasma dry etching and dissolution wet etching are used to define the profile of the epitaxial layer, by which the voltage-dependent variation trend of the thickness of the metal-semiconductor contact depletion layer is modified. The simulation of the inverted trapezoidal epitaxial cross-section SBD is also conducted to explain the physical mechanism of the electric field and space charge region area. Compared with the normal structure, the grading coefficient M increases from 0.47 to 0.52, and the capacitance modulation ratio (C_max/C_min) increases from 6.70 to 7.61. The inverted trapezoidal epitaxial cross-section structure is a promising approach to improve the variable-capacity ratio by eliminating the accumulation of charge at the Schottky electrode edge. A 190 GHz frequency doubler based on the inverted trapezoidal epitaxial cross-section SBD also shows a doubling efficiency of 35% compared to that 30% of a normal SBD.     

Laser cooling of solids [Laser Photon. Rev. 3, No. 1–2, 67–84 (2009)]

Fig. 7b and Figs. 14a and b in the paper published in Laser Photon. Rev. 3 , 67–84 have not been referenced completely. Please find the correct figure captions here.     

Analysis of the Interfacial Energy of GaAs‐Si Heterostructures

Numerical calculations of GaAs/Si interfacial energy based on Ackland's semiempirical four‐parameter model for tetravalent semiconductor have been performed. The calculated interfacial energy varies with Si substrate misorientation, showing minima at angles that correspond to the (011), (133), (112) and (113) planes of Si. These planes are preferable for GaAs heteroepitaxy on Si substrates.