GaAs-InP异质材料的结构特性和光学特性研究

我们在低压金属有机汽相沉积(MOCVD)设备上采用两步升温法与金属有机源流量周期调制生长界面过渡层方法制备出GaAs-InP材料,并对此进行了X-射线衍射、低温光致发光谱(PL)和Raman谱分析,结果表明,GaAs外延层的位错密度低于用两步升温法得到的GaAs材料,PL谱峰较强,GaAs的特征激子峰和杂质相关的激子峰同时被测到。Raman谱PL谱的峰移表明GaAs外延层处于(100)双轴伸张应力下,应力大小随温度变化是由于GaAs、InP之间的热膨胀系数不同。     

A High Efficiency Yb3+-doped Fiber Ring Cavity Laser with Narrow Line-widthRound-trip Dispersion Calculation for Martinez Pulse Stretcher

A novel Yb3+-doped fiber ring cavity laser pumped by a 977 nm laser diode is presented with its output laser wavelength of 1060 nm. Based on a fiber Bragg grating (FBG), the laser exhibits 0.20 nm line-width, 7.5 mW laser output power, 40 dB signal-to-noise ratio (SNR) and 66% slope efficiency.This paper proposed a ray-tracing model for the Martinez stretcher, derived the calculation formulae for the stretcher of a grating-spherical mirror system and discussed the error for the total dispersion resulted from the spatial dispersion. The calculated results show that the error could be ignored for the beam returned to the stretcher for the second pass in the wavelength range of 750 nm and 850 nm.     

GaAs探测器实验标定

叙述了在闪光Ⅰ上用6MV轫致辐射实验标定快响应GaAs光电探测器的原理实验结果以及分析讨论。     

Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures

A detailed experimental study of electron cyclotron resonance (CR) has been carried out at 4.2 K in three modulation-doped GaAs/Al_0.3Ga_0.7As multiple quantum well samples in fields up to 30 T. A strong avoided-level-crossing splitting of the CR energies due to resonant magnetopolaron effects is observed for all samples near the GaAs reststrahlen region. Resonant splittings in the region of AlAs-like interface phonon modes of the barriers are observed in two samples with narrower well width and smaller doping concentration. The interaction between electrons and the AlAs interface optical phonon modes has been calculated for our specific sample structures in the framework of the memory-function formalism. The calculated results are in good agreement with the experimental results, which confirms our assignment of the observed splitting near the AlAs-like phonon region is due to the resonant magnetopolaron interaction of electrons in the wells with AlAs-like interface phonons.     

夜视像增强器(蓝光延伸与近红外延伸光阴极)的近期进展

２０世纪９０年代以来，夜视像增强器的研究主要朝着两个方向发展：一是研究对于探测、识别与确认沙漠地带或沙地景物有贡献的蓝光延伸（＜５５０ｎｍ）ＧａＡｓ负电子亲和势（ＮＥＡ）光阴极，光谱响应向短波长延伸，使光阴极灵敏度、光增益与鉴别率等性能大大优于标准三代管，从而形成“加强三代管”或所谓“四代管”，其探测性能较标准三代管高一倍；二是研究与夜天空辐射较为匹配、对１．０６μｍ激光有较高响应的光阴极，包括研究ＩｎＧａＡｓ、ＮＥＡ光阴极（１．０～１．３μｍ和１．５～２．０μｍ）和多碱光阴极（１．０～１．１μｍ）这三类近红外（ＮＩＲ）像管，可用于主被动夜视。本文综述了这几个方面的进展及其在夜视中的实际应用。     

掺Er^3＋石英光纤中的共振增强受激四光子混频

首次实验观察到在1064nm激光泵浦下掺Er~(3+)石英光纤中的共振增强受激四光子混频现象和光学自由感应衰减过程.在频域和时域上实验证明了Er~(3+)的~4I_(11/2)激发态能级对受激四光子混频产生的反斯托克斯谱线的增强效应.     

优质GaAs/Si和AlGaAs/Si材料的MOCVD生长研究

用自制常压MOCVD装置,在Si衬底上生长GaAs和AlGaAs外延层,在高温去除Si衬底表面氧化膜之后,采用两步法,即低温生长过渡层,再提高温度生长外延层。得到了表面镜面光亮的优质GaAs和AlGaAs外延层。X射线双晶衍射仪测试GaAs外延层,其回摆曲线半峰宽是200孤秒,GaAs和AlGaAs外延层在77K温度下,PL谱半峰宽分别是17meV和24meV。     

透射式指数掺杂GaAs光电阴极最佳厚度研究

通过研究指数掺杂GaAs光电阴极中光电子扩散漂移长度与均匀掺杂GaAs光电阴极中光电子扩散长度的差异,确定透射式指数掺杂GaAs光电阴极的最佳厚度范围为16—22 μm.利用量子效率公式对透射式指数掺杂GaAs光电阴极最佳厚度进行了仿真分析,发现厚度为20 μm时阴极积分灵敏度最大.外延生长阴极厚度分别为16和20 μm的两种透射式指数掺杂GaAs样品并进行了激活实验,测得样品的积分灵敏度分别为1228和1547 μA/lm,两者的比值为796%. 实验结果与仿真结果符合. 关键词： GaAs光电阴极 透射式 指数掺杂 厚度     

In_(0.2)Ga_(0.8)As/GaAs单量子阱PL谱温度特性及其机制

测量了不同阱宽In0.2Ga0.8As/GaAs单量子阱的PL谱的峰值波长和荧光谱线半峰全宽随温度的变化。利用Varshni公式对实验峰值波长进行拟合,得到了新的参数。结果表明,无位错应变量子阱带隙仍具有其体材料的特性:荧光谱线半峰全宽随温度升高迅速展宽,这主要归因于声子关联作用增强和激子热离化为自由载流子所致;阱宽越窄荧光峰值能量越高,将其与量子尺寸效应的理论计算结果进行了比较。文中还考察了谱线半峰全宽和阱宽的关系,利用合金无序对这一现象进行了解释。     

大功率GaAs光导开关寿命实验研究

设计并制作了18 mm间隙的半绝缘GaAs光导开关,开关芯片采用标准半导体工艺制作并封装在陶瓷基板上。测试了光导开关在20 kV工作电压、1 kA工作电流时,不同重复频率工作的开关寿命,结果表明,开关寿命4 000次~7 000次,且随着重复频率的提高,开关寿命有所降低。初步分析了导致开关失效的原因为热损伤,包括局部发热导致的连接损伤和材料损伤以及整体发热导致的暗态电阻下降。