NEA GaAs光电阴极激活工艺研究

本文报道了 GaAs 反射式光电阴极的激活工艺过程和结果.通过实验确定了 GaAs表面的热清洁温度,利用钼丝热辐射加热方法达到了比较理想的清洁效果,采用铯分子源和高纯氧作氧源获得了高于1000μA/1m 的激活积分灵敏度.     

A Semiconductor Waveguide-Type Optical Frequency Shifter

A waveguide-type optical frequency shifter based on a rotating half-wave plate is proposed. The underlying principle can be used to realize a bit-rate-free and modulation-code-free optical frequency shifter. The waveguide was formed along the ≪1 1 1> direction on a GaAs (1 1 0) substrate by molecular beam epitaxy (MBE) and reactive ion beam etching (RIBE). A 10-MHz optical frequency shift with 16 V_p-p applied voltage and 22.5% shift efficiency is demonstrated.     

GaInP2/GaAs/Ge叠层太阳电池材料的低压MOCVD外延生长

本文采用自制的LP-MOCVD设备,外延生长出GaInP₂/GaAs/Ge叠层太阳电池结构片,对电池材料进行了X射线衍射测试分析.另外,采用二次离子质谱仪测试了电池结构的剖面曲线.用此材料做出的叠层太阳电池,AMO条件下光电转换效率η=13.6%,开路电压V_oc=2230mV,短路电流密度J_sc=12.6mA/cm².     

Strain effects on optical properties of pyramidal InAs/GaAs quantum dots

Strain distribution and optical properties in a self-assembled pyramidal InAs/GaAs quantum dot grown by epitaxy are investigated. A model, based on the theory of linear elasticity, is developed to analyze three-dimensional induced strain field. In the model, the capping material in the heterostructure is omitted during the strain analysis to take into account the sequence of the fabrication process. The mismatch of lattice constants is the driving source of the induced strain and is treated as initial strain in the analysis. Once the strain analysis is completed, the capping material is added back to the heterostructure for electronic band calculation. The strain-induced potential is incorporated into the three-dimensional steady-state Schrödinger equation with the aid of Pikus–Bir Hamiltonian with modified Luttinger–Kohn formalism for the electronic band structure calculation. The strain field, the energy levels and wave functions are found numerically by using of a finite element package FEMLAB. The energy levels as well as the wave functions of both conduction and valence bands of quantum dot are calculated. Finally, the transition energy of ground state is also computed. Numerical results reveal that not only the strain field but also all other optical properties from current model show significant difference from the counterparts of the conventional model.     

1313nm脉冲泵浦下掺Er3+光纤中多波长可见光的产生

本文报道了以1313nmNd:YLF激光脉冲泵浦掺饵(Er³⁺)单模GeO₂/SiO₂光纤而产生多波长可见光的实验,在该光纤中观察到(463～510)nm间的多波长放大自发辐射过程,此过程对应于Er³⁺离子的²G_7/2等几个激发态到⁴I_13/2亚稳态的跃迁.其激发过程是分步的四光子吸收过程,同时,掺饵光纤的红外发射峰1530nm(⁴I_13/2-⁴I_15/2)与1313nm泵浦光之间的三波混频过程也对这一区间的连续多峰的光谱结构有贡献.实验中还观察到540nm附近的绿光辐射.     

Electronical tunable millimeterwave oscillators in slotline technique

A new electronical tuning process is proposed for a millimeterwave oscillator in slotline-technique. The circuit used for the GaAs-FET oscillator is realized by a slotline coupler-structure in which the feedback between the resonator and the transistor drain is made by help of electromagnetical field.     

The electrical properties of semiconductor/metal,semiconductor/liquid,and semiconductor/conducting polymer contacts

Critical comparisons are drawn between the basic electrical properties of semiconductor/metal, semiconductor/liquid, and semiconductor/conducting polymer junctions. A theoretical model is developed to describe the basic current-voltage properties of semiconductor contacts, with emphasis on the contrasts between ideal and observed behavior. Using the concepts from this model, the characteristics of a variety of semiconductor contacts are evaluated. The discussion focuses on the following semiconductors: Si, GaAs, InP, and II-VI compounds based on the Cd-(chalcogenide) materials.     

GaAs-InP异质材料的结构特性和光学特性研究

我们在低压金属有机汽相沉积(MOCVD)设备上采用两步升温法与金属有机源流量周期调制生长界面过渡层方法制备出GaAs-InP材料,并对此进行了X-射线衍射、低温光致发光谱(PL)和Raman谱分析,结果表明,GaAs外延层的位错密度低于用两步升温法得到的GaAs材料,PL谱峰较强,GaAs的特征激子峰和杂质相关的激子峰同时被测到。Raman谱PL谱的峰移表明GaAs外延层处于(100)双轴伸张应力下,应力大小随温度变化是由于GaAs、InP之间的热膨胀系数不同。     

A High Efficiency Yb3+-doped Fiber Ring Cavity Laser with Narrow Line-widthRound-trip Dispersion Calculation for Martinez Pulse Stretcher

A novel Yb3+-doped fiber ring cavity laser pumped by a 977 nm laser diode is presented with its output laser wavelength of 1060 nm. Based on a fiber Bragg grating (FBG), the laser exhibits 0.20 nm line-width, 7.5 mW laser output power, 40 dB signal-to-noise ratio (SNR) and 66% slope efficiency.This paper proposed a ray-tracing model for the Martinez stretcher, derived the calculation formulae for the stretcher of a grating-spherical mirror system and discussed the error for the total dispersion resulted from the spatial dispersion. The calculated results show that the error could be ignored for the beam returned to the stretcher for the second pass in the wavelength range of 750 nm and 850 nm.     

GaAs探测器实验标定

叙述了在闪光Ⅰ上用6MV轫致辐射实验标定快响应GaAs光电探测器的原理实验结果以及分析讨论。