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71.
Properties of GaAs single crystals grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) have been studied. The
results show that excessive arsenic atoms of about 1020 cm−3 exist in LTMBE GaAs in the form of arsenic interstitial couples, and cause the dilation in lattice parameter of LTMBE GaAs.
The arsenic interstitial couples will be decomposed, and the excessive arsenic atoms will precipitate during the annealing
above 300°C. Arsenic precipitates accumulate in the junctions of epilayers with the increase in the temperature of annealing.
The depletion regions caused by arsenic precipitates overlap each other in LTMBE GaAs, taking on the character of high resistivity,
and the effects of backgating or sidegating are effectively restrained. 相似文献
72.
73.
Abstract The surface photo voltage (SPV) and photocurrent (PC) transients as a result of the excitation by the short high-intensity light pulses from semiconductor's intrinsic absorption spectral region are investigated in semi-insulating GaAs. It is shown that the mathematical convolution of SPV transients and arbitrary form double-pulse integrator (lock-in, double-boxcar) in a wide temperature range allows to receive the deep-level (DL) spectrum without the need to form electrical contacts to the crystal investigated. The use of such a procedure while scanning the crystal surface with a light spot at a temperature, corresponding to some DL maximum in the spectrum, makes possible the con tactless determination of this DL density distribution profile along the scanning direction. 相似文献
74.
玻璃的最大声子能量决定稀土离子的上转换发光强度,但本研究发现:Yb^3 /Er^3 共掺锗碲酸盐玻璃在980nm LD抽运下,上转换荧光强度随着Bi2O3对PbO的取代和碱金属离子半径的增大而明显增强.而Raman光谱显示基质玻璃的最大声子能量并不随Bi2O3对PbO的取代和碱金属离子半径的增大而变化,但玻璃的最大声子密度随着Bi2O3对PbO取代和碱金属离子半径的增大而降低.从玻璃无辐射跃迁概率的角度,通过分析表明,最大声子密度的降低是玻璃上转换发光强度增强的主要原因. 相似文献
75.
本文报道了 GaAs 反射式光电阴极的激活工艺过程和结果.通过实验确定了 GaAs表面的热清洁温度,利用钼丝热辐射加热方法达到了比较理想的清洁效果,采用铯分子源和高纯氧作氧源获得了高于1000μA/1m 的激活积分灵敏度. 相似文献
76.
A waveguide-type optical frequency shifter based on a rotating half-wave plate is proposed. The underlying principle can be used to realize a bit-rate-free and modulation-code-free optical frequency shifter. The waveguide was formed along the ≪1 1 1> direction on a GaAs (1 1 0) substrate by molecular beam epitaxy (MBE) and reactive ion beam etching (RIBE). A 10-MHz optical frequency shift with 16 Vp-p applied voltage and 22.5% shift efficiency is demonstrated. 相似文献
77.
78.
M.K. Kuo T.R. Lin B.T. Liao C.H. Yu 《Physica E: Low-dimensional Systems and Nanostructures》2005,26(1-4):199
Strain distribution and optical properties in a self-assembled pyramidal InAs/GaAs quantum dot grown by epitaxy are investigated. A model, based on the theory of linear elasticity, is developed to analyze three-dimensional induced strain field. In the model, the capping material in the heterostructure is omitted during the strain analysis to take into account the sequence of the fabrication process. The mismatch of lattice constants is the driving source of the induced strain and is treated as initial strain in the analysis. Once the strain analysis is completed, the capping material is added back to the heterostructure for electronic band calculation. The strain-induced potential is incorporated into the three-dimensional steady-state Schrödinger equation with the aid of Pikus–Bir Hamiltonian with modified Luttinger–Kohn formalism for the electronic band structure calculation. The strain field, the energy levels and wave functions are found numerically by using of a finite element package FEMLAB. The energy levels as well as the wave functions of both conduction and valence bands of quantum dot are calculated. Finally, the transition energy of ground state is also computed. Numerical results reveal that not only the strain field but also all other optical properties from current model show significant difference from the counterparts of the conventional model. 相似文献
79.
本文报道了以1313nmNd:YLF激光脉冲泵浦掺饵(Er3+)单模GeO2/SiO2光纤而产生多波长可见光的实验,在该光纤中观察到(463~510)nm间的多波长放大自发辐射过程,此过程对应于Er3+离子的2G7/2等几个激发态到4I13/2亚稳态的跃迁.其激发过程是分步的四光子吸收过程,同时,掺饵光纤的红外发射峰1530nm(4I13/2-4I15/2)与1313nm泵浦光之间的三波混频过程也对这一区间的连续多峰的光谱结构有贡献.实验中还观察到540nm附近的绿光辐射. 相似文献
80.
A new electronical tuning process is proposed for a millimeterwave oscillator in slotline-technique. The circuit used for the GaAs-FET oscillator is realized by a slotline coupler-structure in which the feedback between the resonator and the transistor drain is made by help of electromagnetical field. 相似文献