Optically induced level anticrossing in undoped GaAs/AlGaAs coupled double quantum wells

We report a photoluminescence detected anticrossing of the energy levels in an undoped asymmetric coupled-double-quantum-well buried in a p-i-n structure. Due to the built-in electric field, the quantum wells are tilted in such a way that the symmetric energy level is higher than that of the antisymmetric one in the conduction band. Keeping the laser excitation energy below the barrier, with increasing laser power, the level anticrossing and the quantum confined Stark effect were observed due to decreasing built-in electric field by the photogenerated electron and hole pairs.     

Spectroscopic investigations of 1.06 μm emission in Nd-doped alkali niobium zinc tellurite glasses

Thermal, structural and optical properties of Nd³⁺ ions in tellurite glass (TeO₂-ZnO-Na₂O-Li₂O-Nb₂O₅) have been investigated. Differential thermal analysis revealed reasonably good forming tendency of the glass composition. FTIR spectra were used to analyze the functional groups present in the glass. Judd-Ofelt intensity parameters were derived from the absorption spectrum and used to calculate the radiative lifetime, branching ratio and stimulated emission cross-section of the ⁴F_3/2→⁴I_9/2, _{11/2, 13/2} transitions. The quantum efficiency of the ⁴F_3/2 level is comparable as well as higher than the typical value of the other tellurite based glasses. The decay from the ⁴F_3/2 level is found to be single exponential for different concentrations of Nd³⁺ ions with a shortening of lifetime with increasing concentration. The experimental values of branching ratio and saturation intensity of ⁴F_3/2→⁴I_11/2 transition indicate the favourable lasing action with low threshold power.     

Green and red up-conversion emissions and thermometric application of Er^3＋-doped silicate glass

The green and red up-conversion emissions centred at about 534, 549 and 663 nm of wavelength, corresponding respectively to the ^2H11/2 → ^4I15/2, ^4S3/2 → ^4I15/2 and ^4F9/2 → ^4I15/2 transitions of Er^3＋ ions, have been observed for the Er^3＋-doped silicate glass excited by a 978 nm semiconductor laser beam. Excitation power dependent behaviour of the up-conversion emission intensity indicates that a two-photon absorption up-conversion process is responsible for the green and red up-conversion emissions. The temperature dependence of the green up-conversion emissions is also studied in a temperature range of 296-673 K, which shows that Er^3＋-doped silicate glass can be used as a sensor in high-temperature measurement.     

III–V quantum devices and circuits based on nanoscale Schottky gate control of hexagonal quantum wire networks

The concept, the present status, key issues and future prospects of a novel hexagonal binary decision diagram (BDD) quantum circuit approach for III–V quantum large-scale integrated circuits (QLSIs) are presented and discussed. In this approach, the BDD logic circuits are implemented on III–V semiconductor-based hexagonal nanowire networks controlled by nanoscale Schottky gates. The hexagonal BDD QLSIs can operate at delay-power products near the quantum limit in the quantum regime as well as in the many-electron classical regime. To demonstrate the feasibility of the present approach, GaAs Schottky wrap gate (WPG)-based single-electron BDD node devices and their integrated circuits were fabricated and their proper operations were confirmed. Selectively grown InGaAs sub-10 nm quantum wires and their hexagonal networks have been investigated to form high-density hexagonal BDD QLSIs operating in the quantum regime at room temperature.     

GaAs：Cr探测器中子辐照改性研究

介绍了一种新型脉冲辐射探测器以及提高其性能的一种方法,并报告了探测器性能与中子积分通量关系的实验结果。     

透射式GaAs光电阴极的X射线衍射研究

本文介绍了高精度多晶多反射X射线衍射仪的一种新的应用.首次将其应用于研究高灵敏度第三代微光象增强器中由掺Zn的p型GaAs/GaAlAs、玻璃组成的光电阴极的材料特性；发展了用倒格子空间衍射图方法评价光电阴级组件晶体质量的方法.通过分析得知,衍射强度在倒格子空间沿。方向展宽主要起因于晶体中的嵌镶效应的增强.文中采用衍射动力学理论的计算方法并忽略初始条件,模拟后得到的曲线与衍射强度沿ω/θ方向的投影强度曲线符合的比较好.粘接良好的阴极样品表明,GaAs/GaAlAs晶格常数的变化基本上可以消除,但粘接引起的嵌镶效应的增强却不能完全消除.     

Atomic Force Microscopy Analysis of Statistical Roughness of GaAs Surfaces Originated by Thermal Oxidation

We have determined the important statistical quantities of the rough boundary between a GaAs single crystal and its oxide film formed by thermal oxidation. Thermal oxidation of the GaAs surfaces was performed at the temperature of 500°C. Using mathematical procedures developed for treating AFM data consisting of a family of the values of the heights of the irregularities of this roughness the values of the important statistical quantities of roughness were determined for 11 samples of the GaAs surfaces created by dissolution of the thermal oxide films originated during thermal oxidation of the smooth GaAs samples (the times of oxidation of these 11 samples were within interval of 20min–8 hours). From the AFM analysis of the roughness of GaAs surfaces it was found that the roughnening of these surfaces was the most pronounced for shorter oxidation times, i.e. for times smaller than about 2 hours.     

A GaAs–InGaAs optoelectronic switch with multiple operation states

An optoelectronic switch with both n- and p-type delta-doped (-doped) quantum wells was investigated. The -doped structures formed potential wells for the carrier accumulation and potential barriers for the carrier injection. Being possessed of -doped sheets with different doping levels, the potential barriers were sequentially collapsed to produce a double negative-differential-resistance (NDR) phenomenon in the current–voltage (I–V) characteristics of the device, due to the carrier accumulation in the potential wells. The device also showed an optical function related to the barrier heights controllable by incident light.     

Er3+离子掺杂钡镓锗玻璃上转换发光机理研究

研究了Er³⁺离子掺杂钡镓锗玻璃的吸收光谱、拉曼光谱和上转换光谱.分析了Er³⁺离子在钡镓锗玻璃中的上转换发光机理.结果表明：玻璃的最大声子能量为828cm^-1，紫外截止波长为275nm.采用800nm和980nmLD激发玻璃样品，在室温下观察到强烈的上转换绿光和红光发射.随着Er³⁺离子浓度的增加，绿光发光强度先增加后减小，而红光发光强度呈单调递增趋势.能量分析表明：800nmLD激发产生的绿光主要源于Er³⁺离子4I_13/2能级的激发态吸收过程；红光发射主要源于Er³⁺离子4I_13/2能级与4I_11/2能级之间的能量转移过程.980nmLD激发产生的绿光主要源于Er³⁺离子4I_11/2能级之间的能量转移过程；而红光发射主要源于Er³⁺离子4I_13/2能级与4I_11/2能级之间的能量转移过程和4I_13/2能级的激发态吸收过程.通过量子效率分析，发现采用800nmLD激发Er³⁺离子掺杂浓度为1mol% 的样品时，上转换绿光发光效率最高. 关键词： 上转换发光机理 3+离子掺杂')" href="#">Er³⁺离子掺杂 钡镓锗玻璃